few typos

diff --git a/posic/publications/defect_combos.tex b/posic/publications/defect_combos.tex
index 1b7752d8747c91688baad288894dbb38e2421a45..7fbb9fa797cc81ee43d654c1e6900fa6f5e38a10 100644 (file)
--- a/posic/publications/defect_combos.tex
+++ b/posic/publications/defect_combos.tex
@@ -75,9 +75,10 @@ The ions and cell shape were allowed to change in order to realize a constant pr
 Ionic relaxation was realized by the conjugate gradient algorithm.\r
 Spin polarization has been fully accounted for.\r
 \r
-Migration and recombination pathways have been ivestigated utilizing the constraint conjugate gradient relaxation technique (CRT)\cite{kaukonen98}.\r
+Migration and recombination pathways have been investigated utilizing the constraint conjugate gradient relaxation technique (CRT)\cite{kaukonen98}.\r
 The defect formation energy $E-N_{\text{Si}}\mu_{\text{Si}}-N_{\text{C}}\mu_{\text{C}}$ is defined by chosing SiC as a particle reservoir for the C impurity, i.e. the chemical potentials are determined by the cohesive energies of a perfect Si and SiC supercell after ionic relaxation.\r
-The binding energy of a defect pair is given by the difference of the formation energy of the complex and the sum of the two separated defect configurations, i.e. energetically favorable configurations show binding energies below zero and non-interacting isolated defects would result in a binding energy of zero.\r
+The binding energy of a defect pair is given by the difference of the formation energy of the complex and the sum of the two separated defect configurations.\r
+Accordingly, energetically favorable configurations show binding energies below zero while non-interacting isolated defects result in a binding energy of zero.\r
 \r
 \section{Results}\r
 \r