Method:
\begin{itemize}
\item Start in fully relaxed (assumed) saddle point configuration
- \item Move towards \hkl<1 0 0> cnfiguration using updated values
+ \item Move towards \hkl<1 0 0> configuration using updated values
for $\Delta x$, $\Delta y$ and $\Delta z$
\item \hkl<1 1 0> constraints applied, 1 Si atom fixed
\item $4\times 4\times 3$ Type 1 supercell
\end{slide}
+\begin{slide}
+
+ {\large\bf\boldmath
+ Investigation of the migration path along \hkl<1 1 0> (VASP)
+ }
+
+ \small
+
+ \underline{Minimum:}\\
+ \begin{minipage}{4cm}
+ \includegraphics[width=3.5cm]{c_100_mig_vasp/110_c-si_split.eps}
+ \end{minipage}
+ \begin{minipage}{8cm}
+ \begin{itemize}
+ \item Starting conf: 35 \% displacement results
+ \item \hkl<1 1 0> constraint disabled
+ \end{itemize}
+ \begin{center}
+ $\Downarrow$
+ \end{center}
+ \begin{itemize}
+ \item C-Si \hkl<1 1 0> split interstitial
+ \item Stable configuration
+ \item $E_{\text{f}}=4.13\text{ eV}$
+ \end{itemize}
+ \end{minipage}\\[0.1cm]
+
+ \underline{Maximum:}\\
+ \begin{minipage}{6cm}
+ \begin{center}
+ \includegraphics[width=2.3cm]{c_100_mig_vasp/100-110_01.eps}
+ \includegraphics[width=2.3cm]{c_100_mig_vasp/100-110_02.eps}\\
+ 20 \% $\rightarrow$ 25 \%\\
+ Breaking of Si-C bond
+ \end{center}
+ \end{minipage}
+ \begin{minipage}{6cm}
+ \includegraphics[width=6.2cm]{c_100_110sp-i_upd_vasp.ps}
+ \end{minipage}
+
+\end{slide}
+
\begin{slide}
{\large\bf