\small
-\begin{tabular}{l | c c c c c c}
+\begin{tabular}{l c c c c c c}
\hline
& 3C-SiC & 4H-SiC & 6H-SiC & Si & GaN & Diamond\\
\hline
-Hardness [Mohs] & 9.6 & & & 6.5 & & 10 \\
+Hardness [Mohs] & \multicolumn{3}{c}{------ 9.6 ------}& 6.5 & - & 10 \\
Band gap [eV] & 2.36 & 3.23 & 3.03 & 1.12 & 3.39 & 5.5 \\
-Break down field [$10^6$ V/cm] & & & & & & \\
-Saturation drift velocity [] & & & & & & \\
-Electron mobility [] & & & & & & \\
-Hole mobility [] & & & & & & \\
-Thermal conductivity [] & & & & & & \\
+Break down field [$10^6$ V/cm] & 4 & 3 & 3.2 & 0.6 & 5 & 10 \\
+Saturation drift velocity [$10^7$ cm/s] & 2.5 & 2.0 & 2.0 & 1 & 2.7 & 2.7 \\
+Electron mobility [cm$^2$/Vs] & 800 & 900 & 400 & 1100 & 900 & 2200 \\
+Hole mobility [cm$^2$/Vs] & 320 & 120 & 90 & 420 & 150 & 1600 \\
+Thermal conductivity [W/cmK] & 5.0 & 4.9 & 4.9 & 1.5 & 1.3 & 22 \\
\hline
\end{tabular}
+{\tiny
+ Values for $T=300$ K
+}
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