posic/talks/seminar_2010.tex

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  27 \graphicspath{{../img/}}
  28
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  30
  31 \usepackage{semcolor}
  32 \usepackage{semlayer}           % Seminar overlays
  33 \usepackage{slidesec}           % Seminar sections and list of slides
  34
  35 \input{seminar.bug}             % Official bugs corrections
  36 \input{seminar.bg2}             % Unofficial bugs corrections
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  38 \articlemag{1}
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  40 \special{landscape}
  41
  42 % font
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  45 %\usepackage{mathptmx}
  46
  47 \usepackage{upgreek}
  48
  49 \begin{document}
  50
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  54 \pagestyle{empty}
  55
  56 % specify width and height
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  78
  79 % topic
  80
  81 \begin{slide}
  82 \begin{center}
  83
  84  \vspace{16pt}
  85
  86  {\LARGE\bf
  87   Atomistic simulation study of the silicon carbide precipitation
  88   in silicon
  89  }
  90
  91  \vspace{48pt}
  92
  93  \textsc{F. Zirkelbach}
  94
  95  \vspace{48pt}
  96
  97  Lehrstuhlseminar
  98
  99  \vspace{08pt}
 100
 101  17. Juni 2010
 102
 103 \end{center}
 104 \end{slide}
 105
 106 % motivation / properties / applications of silicon carbide
 107 \begin{slide}
 108
 109 \small
 110
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 112
 113
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 119
 120  \rput[lt](0.2,4.6){\color{gray}PROPERTIES}
 121
 122  \rput[lt](0.5,4){wide band gap}
 123  \rput[lt](0.5,3.5){high electric breakdown field}
 124  \rput[lt](0.5,3){good electron mobility}
 125  \rput[lt](0.5,2.5){high electron saturation drift velocity}
 126  \rput[lt](0.5,2){high thermal conductivity}
 127
 128  \rput[lt](0.5,1.5){hard and mechanically stable}
 129  \rput[lt](0.5,1){chemically inert}
 130
 131  \rput[lt](0.5,0.5){radiation hardness}
 132
 133  \rput[rt](13.3,4.6){\color{gray}APPLICATIONS}
 134
 135  \rput[rt](13,3.85){high-temperature, high power}
 136  \rput[rt](13,3.5){and high-frequency}
 137  \rput[rt](13,3.15){electronic and optoelectronic devices}
 138
 139  \rput[rt](13,2.35){material suitable for extreme conditions}
 140  \rput[rt](13,2){microelectromechanical systems}
 141  \rput[rt](13,1.65){abrasives, cutting tools, heating elements}
 142
 143  \rput[rt](13,0.85){first wall reactor material, detectors}
 144  \rput[rt](13,0.5){and electronic devices for space}
 145
 146 \end{pspicture}
 147
 148 \begin{picture}(0,0)(-10,68)
 149 \includegraphics[width=2.6cm]{wide_band_gap.eps}
 150 \end{picture}
 151 \begin{picture}(0,0)(-295,-165)
 152 \includegraphics[width=3cm]{sic_led.eps}
 153 \end{picture}
 154 \begin{picture}(0,0)(-215,-165)
 155 \includegraphics[width=2.5cm]{6h-sic_3c-sic.eps}
 156 \end{picture}
 157 \begin{picture}(0,0)(-313,65)
 158 \includegraphics[width=2.2cm]{infineon_schottky.eps}
 159 \end{picture}
 160 \begin{picture}(0,0)(-220,65)
 161 \includegraphics[width=2.9cm]{sic_wechselrichter_ise.eps}
 162 \end{picture}
 163
 164 \end{slide}
 165
 166 % contents
 167
 168 \begin{slide}
 169
 170 {\large\bf
 171  Outline
 172 }
 173
 174  \begin{itemize}
 175   \item Fabrication of silicon carbide and different polytypes
 176   \item Precipitation model of 3C-SiC in Si
 177   \item Utilized simulation techniques
 178         \begin{itemize}
 179          \item Molecular dynamics (MD) simulations
 180          \item Density functional theory (DFT) calculations
 181         \end{itemize}
 182   \item C and Si self-interstitial point defects in silicon
 183   \item Precipitation simulations
 184   \item Summary / Conclusion / Outlook
 185  \end{itemize}
 186
 187 \end{slide}
 188
 189 % start of contents
 190
 191 \begin{slide}
 192
 193  {\large\bf
 194   Polytypes of SiC
 195  }
 196
 197  \vspace{4cm}
 198
 199  \small
 200
 201 \begin{tabular}{l c c c c c c}
 202 \hline
 203  & 3C-SiC & 4H-SiC & 6H-SiC & Si & GaN & Diamond\\
 204 \hline
 205 Hardness [Mohs] & \multicolumn{3}{c}{------ 9.6 ------}& 6.5 & - & 10 \\
 206 Band gap [eV] & 2.36 & 3.23 & 3.03 & 1.12 & 3.39 & 5.5 \\
 207 Break down field [$10^6$ V/cm] & 4 & 3 & 3.2 & 0.6 & 5 & 10 \\
 208 Saturation drift velocity [$10^7$ cm/s] & 2.5 & 2.0 & 2.0 & 1 & 2.7 & 2.7 \\
 209 Electron mobility [cm$^2$/Vs] & 800 & 900 & 400 & 1100 & 900 & 2200 \\
 210 Hole mobility [cm$^2$/Vs] & 320 & 120 & 90 & 420 & 150 & 1600 \\
 211 Thermal conductivity [W/cmK] & 5.0 & 4.9 & 4.9 & 1.5 & 1.3 & 22 \\
 212 \hline
 213 \end{tabular}
 214
 215 {\tiny
 216  Values for $T=300$ K
 217 }
 218
 219 \begin{picture}(0,0)(-160,-155)
 220  \includegraphics[width=7cm]{polytypes.eps}
 221 \end{picture}
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 223  \includegraphics[width=3.8cm]{cubic_hex.eps}\\
 224 \end{picture}
 225 \begin{picture}(0,0)(-10,-175)
 226  {\tiny cubic (twist)}
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 239 \end{pspicture}
 240
 241 \end{slide}
 242
 243 \begin{slide}
 244
 245  {\large\bf
 246   Fabrication of silicon carbide
 247  }
 248
 249  \small
 250
 251  \vspace{4pt}
 252
 253  SiC - \emph{Born from the stars, perfected on earth.}
 254
 255  \vspace{4pt}
 256
 257  Conventional thin film SiC growth:
 258  \begin{itemize}
 259   \item \underline{Sublimation growth using the modified Lely method}
 260         \begin{itemize}
 261          \item SiC single-crystalline seed at $T=1800 \, ^{\circ} \text{C}$
 262          \item Surrounded by polycrystalline SiC in a graphite crucible\\
 263                at $T=2100-2400 \, ^{\circ} \text{C}$
 264          \item Deposition of supersaturated vapor on cooler seed crystal
 265         \end{itemize}
 266   \item \underline{Homoepitaxial growth using CVD}
 267         \begin{itemize}
 268          \item Step-controlled epitaxy on off-oriented 6H-SiC substrates
 269          \item C$_3$H$_8$/SiH$_4$/H$_2$ at $1100-1500 \, ^{\circ} \text{C}$
 270          \item Angle, temperature $\rightarrow$ 3C/6H/4H-SiC
 271          \item High quality but limited in size of substrates
 272         \end{itemize}
 273   \item \underline{Heteroepitaxial growth of 3C-SiC on Si using CVD/MBE}
 274         \begin{itemize}
 275          \item Two steps: carbonization and growth
 276          \item $T=650-1050 \, ^{\circ} \text{C}$
 277          \item Quality and size not yet sufficient
 278         \end{itemize}
 279  \end{itemize}
 280
 281  \begin{picture}(0,0)(-280,-65)
 282   \includegraphics[width=3.8cm]{6h-sic_3c-sic.eps}
 283  \end{picture}
 284  \begin{picture}(0,0)(-280,-55)
 285   \begin{minipage}{5cm}
 286   {\tiny
 287    NASA: 6H-SiC and 3C-SiC LED\\[-7pt]
 288    on 6H-SiC substrate
 289   }
 290   \end{minipage}
 291  \end{picture}
 292  \begin{picture}(0,0)(-265,-150)
 293   \includegraphics[width=2.4cm]{m_lely.eps}
 294  \end{picture}
 295  \begin{picture}(0,0)(-333,-175)
 296   \begin{minipage}{5cm}
 297   {\tiny
 298    1. Lid\\[-7pt]
 299    2. Heating\\[-7pt]
 300    3. Source\\[-7pt]
 301    4. Crucible\\[-7pt]
 302    5. Insulation\\[-7pt]
 303    6. Seed crystal
 304   }
 305   \end{minipage}
 306  \end{picture}
 307
 308 \end{slide}
 309
 310 \end{document}