year = "1995",
}
-@Article{tersoff89,
+@Article{brenner89,
title = "Relationship between the embedded-atom method and
Tersoff potentials",
author = "Donald W. Brenner",
precipitate",
}
+@InProceedings{werner96,
+ author = "P. Werner and R. Koegler and W. Skorupa and D.
+ Eichler",
+ booktitle = "Ion Implantation Technology. Proceedings of the 11th
+ International Conference on",
+ title = "{TEM} investigation of {C}-Si defects in carbon
+ implanted silicon",
+ year = "1996",
+ month = jun,
+ volume = "",
+ number = "",
+ pages = "675--678",
+ keywords = "beta;-SiC precipitates;30 s;700 to 1300 C;C
+ atom/radiation induced defect interaction;C depth
+ distribution;C precipitation;C-Si defects;C-Si
+ dimers;CZ Si;HREM;Si:C;TEM;buried layer morphology;high
+ energy ion implantation;ion implantation;metastable
+ agglomerates;microdefects;positron annihilation
+ spectroscopy;rapid thermal annealing;secondary ion mass
+ spectrometry;vacancy clusters;buried
+ layers;carbon;elemental semiconductors;impurity-defect
+ interactions;ion implantation;positron
+ annihilation;precipitation;rapid thermal
+ annealing;secondary ion mass
+ spectra;silicon;transmission electron
+ microscopy;vacancies (crystal);",
+ doi = "10.1109/IIT.1996.586497",
+ ISSN = "",
+ notes = "c-si agglomerates dumbbells",
+}
+
@Article{strane94,
author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
Picraux and J. K. Watanabe and J. W. Mayer",
number = "1-4",
pages = "528--533",
year = "1999",
- note = "",
ISSN = "0168-583X",
doi = "DOI: 10.1016/S0168-583X(98)00787-3",
URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85",
author = "J. K. N. Lindner and B. Stritzker",
+ notes = "3c-sic precipitation model, c-si dimers (dumbbells)",
}
@Article{lindner01,
notes = "ibs, burried sic layers",
}
+@Article{ito04,
+ title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
+ application in buffer layer for Ga{N} epitaxial
+ growth",
+ journal = "Applied Surface Science",
+ volume = "238",
+ number = "1-4",
+ pages = "159--164",
+ year = "2004",
+ note = "APHYS'03 Special Issue",
+ ISSN = "0169-4332",
+ doi = "DOI: 10.1016/j.apsusc.2004.05.199",
+ URL = "http://www.sciencedirect.com/science/article/B6THY-4CTTNGX-B/2/d24ee637db87f3f1a6ef7fe6820f267c",
+ author = "Y. Ito and T. Yamauchi and A. Yamamoto and M. Sasase
+ and S. Nishio and K. Yasuda and Y. Ishigami",
+ notes = "gan on 3c-sic",
+}
+
@Article{alder57,
author = "B. J. Alder and T. E. Wainwright",
title = "Phase Transition for a Hard Sphere System",
notes = "cvd of 3c-sic on si, sic buffer layer",
}
-@Article{nishino:4889,
+@Article{nishino87,
author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
and Hiroyuki Matsunami",
collaboration = "",
number = "1-2",
pages = "72--80",
year = "1995",
- notes = "solid source mbe",
ISSN = "0022-0248",
doi = "DOI: 10.1016/0022-0248(95)00170-0",
URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
author = "A. Fissel and U. Kaiser and E. Ducke and B. Schröter
and W. Richter",
+ notes = "solid source mbe of 3c-sic on si and 6h-sic",
+}
+
+@Article{fissel95_apl,
+ author = "A. Fissel and B. Schr{\"{o}}ter and W. Richter",
+ collaboration = "",
+ title = "Low-temperature growth of Si{C} thin films on Si and
+ 6{H}--Si{C} by solid-source molecular beam epitaxy",
+ publisher = "AIP",
+ year = "1995",
+ journal = "Applied Physics Letters",
+ volume = "66",
+ number = "23",
+ pages = "3182--3184",
+ keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
+ RHEED; NUCLEATION",
+ URL = "http://link.aip.org/link/?APL/66/3182/1",
+ doi = "10.1063/1.113716",
+ notes = "mbe 3c-sic on si and 6h-sic",
}
@Article{borders71,
number = "11",
pages = "509--511",
URL = "http://link.aip.org/link/?APL/18/509/1",
- notes = "first time sic by ibs",
doi = "10.1063/1.1653516",
+ notes = "first time sic by ibs, follow cites for precipitation
+ ideas",
}
@Article{reeson87,
publisher = "American Physical Society",
}
+@Article{brenner90,
+ title = "Empirical potential for hydrocarbons for use in
+ simulating the chemical vapor deposition of diamond
+ films",
+ author = "Donald W. Brenner",
+ journal = "Phys. Rev. B",
+ volume = "42",
+ number = "15",
+ pages = "9458--9471",
+ numpages = "13",
+ year = "1990",
+ month = nov,
+ doi = "10.1103/PhysRevB.42.9458",
+ publisher = "American Physical Society",
+ notes = "brenner hydro carbons",
+}
+
+@Article{bazant96,
+ title = "Modeling of Covalent Bonding in Solids by Inversion of
+ Cohesive Energy Curves",
+ author = "Martin Z. Bazant and Efthimios Kaxiras",
+ journal = "Phys. Rev. Lett.",
+ volume = "77",
+ number = "21",
+ pages = "4370--4373",
+ numpages = "3",
+ year = "1996",
+ month = nov,
+ doi = "10.1103/PhysRevLett.77.4370",
+ publisher = "American Physical Society",
+ notes = "first si edip",
+}
+
@Article{bazant97,
title = "Environment-dependent interatomic potential for bulk
silicon",
month = oct,
doi = "10.1103/PhysRevB.56.8542",
publisher = "American Physical Society",
+ notes = "second si edip",
}
@Article{justo98,
month = aug,
doi = "10.1103/PhysRevB.58.2539",
publisher = "American Physical Society",
+ notes = "latest si edip",
}
@Article{parcas_md,
angular distribution, coordination",
}
-@Article{wen:073522,
+@Article{wen09,
author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J.
W. Liang and J. Zou",
collaboration = "",
author = "J. Hornstra",
notes = "dislocations in diamond lattice",
}
+
+@Article{eichhorn99,
+ author = "F. Eichhorn and N. Schell and W. Matz and R.
+ K{\"{o}}gler",
+ collaboration = "",
+ title = "Strain and Si{C} particle formation in silicon
+ implanted with carbon ions of medium fluence studied by
+ synchrotron x-ray diffraction",
+ publisher = "AIP",
+ year = "1999",
+ journal = "Journal of Applied Physics",
+ volume = "86",
+ number = "8",
+ pages = "4184--4187",
+ keywords = "silicon; carbon; elemental semiconductors; chemical
+ interdiffusion; ion implantation; X-ray diffraction;
+ precipitation; semiconductor doping",
+ URL = "http://link.aip.org/link/?JAP/86/4184/1",
+ doi = "10.1063/1.371344",
+ notes = "sic conversion by ibs, detected substitutional
+ carbon",
+}
+
+@Article{eichhorn02,
+ author = "F. Eichhorn and N. Schell and A. M{\"{u}}cklich and H.
+ Metzger and W. Matz and R. K{\"{o}}gler",
+ collaboration = "",
+ title = "Structural relation between Si and Si{C} formed by
+ carbon ion implantation",
+ publisher = "AIP",
+ year = "2002",
+ journal = "Journal of Applied Physics",
+ volume = "91",
+ number = "3",
+ pages = "1287--1292",
+ keywords = "silicon compounds; wide band gap semiconductors; ion
+ implantation; annealing; X-ray scattering; transmission
+ electron microscopy",
+ URL = "http://link.aip.org/link/?JAP/91/1287/1",
+ doi = "10.1063/1.1428105",
+ notes = "3c-sic alignement to si host in ibs depending on
+ temperature, might explain c int to c sub trafo",
+}
+
+@Article{lucas10,
+ author = "G Lucas and M Bertolus and L Pizzagalli",
+ title = "An environment-dependent interatomic potential for
+ silicon carbide: calculation of bulk properties,
+ high-pressure phases, point and extended defects, and
+ amorphous structures",
+ journal = "Journal of Physics: Condensed Matter",
+ volume = "22",
+ number = "3",
+ pages = "035802",
+ URL = "http://stacks.iop.org/0953-8984/22/i=3/a=035802",
+ year = "2010",
+ notes = "edip sic",
+}
projects / lectures / latex.git / commitdiff