posic/talks/dpg_2008.tex

   1 \pdfoutput=0
   2 \documentclass[landscape,semhelv]{seminar}
   3
   4 \usepackage{verbatim}
   5 \usepackage[german]{babel}
   6 \usepackage[latin1]{inputenc}
   7 \usepackage[T1]{fontenc}
   8 \usepackage{amsmath}
   9 \usepackage{ae}
  10
  11 \usepackage{calc}               % Simple computations with LaTeX variables
  12 \usepackage{caption}            % Improved captions
  13 \usepackage{fancybox}           % To have several backgrounds
  14
  15 \usepackage{fancyhdr}           % Headers and footers definitions
  16 \usepackage{fancyvrb}           % Fancy verbatim environments
  17 \usepackage{pstricks}           % PSTricks with the standard color package
  18
  19 \usepackage{graphicx}
  20 \graphicspath{{../img/}}
  21
  22 \usepackage{semcolor}
  23 \usepackage{semlayer}           % Seminar overlays
  24 \usepackage{slidesec}           % Seminar sections and list of slides
  25
  26 \input{seminar.bug}             % Official bugs corrections
  27 \input{seminar.bg2}             % Unofficial bugs corrections
  28
  29 \articlemag{1}
  30
  31 \begin{document}
  32
  33 \extraslideheight{10in}
  34 \slideframe{plain}
  35
  36 % specify width and height
  37 \slidewidth 27.7cm
  38 \slideheight 19.1cm
  39
  40 % shift it into visual area properly
  41 \def\slideleftmargin{3.3cm}
  42 \def\slidetopmargin{0.0cm}
  43
  44 \newcommand{\ham}{\mathcal{H}}
  45 \newcommand{\pot}{\mathcal{V}}
  46 \newcommand{\foo}{\mathcal{U}}
  47 \newcommand{\vir}{\mathcal{W}}
  48
  49 % topic
  50
  51 \begin{slide}
  52 \begin{center}
  53
  54  \vspace{16pt}
  55
  56  {\LARGE\bf
  57   Molecular dynamics simulation study\\
  58   of the silicon carbide precipitation process
  59  }
  60
  61  \vspace{24pt}
  62
  63  \textsc{\small \underline{F. Zirkelbach}$^1$, J. K. N. Lindner$^1$,
  64          K. Nordlund$^2$, B. Stritzker$^1$}\\
  65
  66  \vspace{32pt}
  67
  68  \begin{minipage}{2.0cm}
  69   \begin{center}
  70   \includegraphics[height=1.6cm]{uni-logo.eps}
  71   \end{center}
  72  \end{minipage}
  73  \begin{minipage}{8.0cm}
  74   \begin{center}
  75    {\footnotesize
  76     $^1$ Experimentalphysik IV, Institut f"ur Physik,\\
  77          Universit"at Augsburg, Universit"atsstr. 1,\\
  78          D-86135 Augsburg, Germany
  79    }
  80   \end{center}
  81  \end{minipage}
  82  \begin{minipage}{2.3cm}
  83   \begin{center}
  84   \includegraphics[height=1.5cm]{Lehrstuhl-Logo.eps}
  85   \end{center}
  86  \end{minipage}
  87
  88  \vspace{16pt}
  89
  90  \begin{minipage}{4.0cm}
  91   \begin{center}
  92   \includegraphics[height=1.6cm]{logo_eng.eps}
  93   \end{center}
  94  \end{minipage}
  95  \begin{minipage}{8.0cm}
  96   \begin{center}
  97   {\footnotesize
  98    $^2$ Accelerator Laboratory, Department of Physical Sciences,\\
  99    University of Helsinki, Pietari Kalmink. 2,\\
 100    00014 Helsinki, Finland
 101   }
 102   \end{center}
 103  \end{minipage}
 104 \end{center}
 105 \end{slide}
 106
 107 % contents
 108
 109 \begin{slide}
 110
 111  \begin{center}
 112  {\bf
 113   Molecular dynamics simulation study\\
 114   of the silicon carbide precipitation process
 115  }
 116  \end{center}
 117
 118  \vspace{16pt}
 119
 120  {\large\bf
 121   Outline
 122  }
 123
 124  \vspace{16pt}
 125
 126  \begin{itemize}
 127   \item Motivation / Introduction
 128   \item Molecular dynamics simulation details
 129         \begin{itemize}
 130          \item Integrator, potential, ensemble control
 131          \item Simulation sequence
 132         \end{itemize}
 133   \item Results gained by simulation
 134         \begin{itemize}
 135          \item Carbon interstitials in silicon
 136          \item Existence of $SiC$-precipitates
 137         \end{itemize}
 138   \item Conclusion / Outlook
 139  \end{itemize}
 140 \end{slide}
 141
 142 % start of contents
 143
 144 \end{document}
 145