notes = "improved sic on off-axis si substrates, reduced apbs",
}
+@Article{ueda90,
+ title = "Crystal growth of Si{C} by step-controlled epitaxy",
+ journal = "Journal of Crystal Growth",
+ volume = "104",
+ number = "3",
+ pages = "695--700",
+ year = "1990",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(90)90013-B",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46CC6CX-KN/2/d5184c7bd29063985f7d1dd4112b12c9",
+ author = "Tetsuzo Ueda and Hironori Nishino and Hiroyuki
+ Matsunami",
+ notes = "step-controlled epitaxy model",
+}
+
@Article{kimoto93,
author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
and Hiroyuki Matsunami",
notes = "mbe 3c-sic on si and 6h-sic",
}
+@Article{fissel96,
+ author = "Andreas Fissel and Ute Kaiser and Kay Pfennighaus and
+ Bernd Schr{\"{o}}ter and Wolfgang Richter",
+ collaboration = "",
+ title = "Growth of 6{H}--Si{C} on 6{H}--Si{C}(0001) by
+ migration enhanced epitaxy controlled to an atomic
+ level using surface superstructures",
+ publisher = "AIP",
+ year = "1996",
+ journal = "Applied Physics Letters",
+ volume = "68",
+ number = "9",
+ pages = "1204--1206",
+ keywords = "MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
+ NUCLEATION; SILICON CARBIDES; SURFACE RECONSTRUCTION;
+ SURFACE STRUCTURE",
+ URL = "http://link.aip.org/link/?APL/68/1204/1",
+ doi = "10.1063/1.115969",
+ notes = "ss mbe sic, superstructure, reconstruction",
+}
+
+@Article{righi03,
+ title = "Ab initio Simulations of Homoepitaxial Si{C} Growth",
+ author = "M. C. Righi and C. A. Pignedoli and R. Di Felice and
+ C. M. Bertoni and A. Catellani",
+ journal = "Phys. Rev. Lett.",
+ volume = "91",
+ number = "13",
+ pages = "136101",
+ numpages = "4",
+ year = "2003",
+ month = sep,
+ doi = "10.1103/PhysRevLett.91.136101",
+ publisher = "American Physical Society",
+ notes = "dft calculations mbe sic growth",
+}
+
@Article{borders71,
author = "J. A. Borders and S. T. Picraux and W. Beezhold",
collaboration = "",