notes = "sic intro, properties",
}
-@Article{neudeck95,
- author = "P. G. Neudeck",
- title = "{PROGRESS} {IN} {SILICON}-{CARBIDE} {SEMICONDUCTOR}
- {ELECTRONICS} {TECHNOLOGY}",
- journal = "Journal of Electronic Materials",
- year = "1995",
- volume = "24",
- number = "4",
- pages = "283--288",
- month = apr,
-}
-
@Article{foo,
author = "Noch Unbekannt",
title = "How to find references",
author = "Yu.M. Tairov and V. F. Tsvetkov",
}
+@Article{barrett91,
+ title = "Si{C} boule growth by sublimation vapor transport",
+ journal = "Journal of Crystal Growth",
+ volume = "109",
+ number = "1-4",
+ pages = "17--23",
+ year = "1991",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(91)90152-U",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ4VX-KF/2/fb802a6d67a8074a672007e972b264e1",
+ author = "D. L. Barrett and R. G. Seidensticker and W. Gaida and
+ R. H. Hopkins and W. J. Choyke",
+}
+
+@Article{barrett93,
+ title = "Growth of large Si{C} single crystals",
+ journal = "Journal of Crystal Growth",
+ volume = "128",
+ number = "1-4",
+ pages = "358--362",
+ year = "1993",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(93)90348-Z",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKSGB-4D/2/bc26617f48735a9ffbf5c61a5e164d9c",
+ author = "D. L. Barrett and J. P. McHugh and H. M. Hobgood and
+ R. H. Hopkins and P. G. McMullin and R. C. Clarke and
+ W. J. Choyke",
+}
+
+@Article{stein93,
+ title = "Control of polytype formation by surface energy
+ effects during the growth of Si{C} monocrystals by the
+ sublimation method",
+ journal = "Journal of Crystal Growth",
+ volume = "131",
+ number = "1-2",
+ pages = "71--74",
+ year = "1993",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(93)90397-F",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FX1XJ-1X/2/493b180c29103dba5dba351e0fae5b9d",
+ author = "R. A. Stein and P. Lanig",
+ notes = "6h and 4h, sublimation technique",
+}
+
@Article{nishino83,
author = "Shigehiro Nishino and J. Anthony Powell and Herbert A.
Will",
optimization",
URL = "http://link.aip.org/link/?JAP/53/6962/1",
doi = "10.1063/1.330041",
+ notes = "blue led, sublimation process",
}
+@Article{neudeck95,
+ author = "Philip Neudeck",
+ affiliation = "NASA Lewis Research Center M.S. 77-1, 21000 Brookpark
+ Road 44135 Cleveland OH",
+ title = "Progress in silicon carbide semiconductor electronics
+ technology",
+ journal = "Journal of Electronic Materials",
+ publisher = "Springer Boston",
+ ISSN = "0361-5235",
+ keyword = "Chemistry and Materials Science",
+ pages = "283--288",
+ volume = "24",
+ issue = "4",
+ URL = "http://dx.doi.org/10.1007/BF02659688",
+ note = "10.1007/BF02659688",
+ year = "1995",
+ notes = "sic data, advantages of 3c sic",
+}
+
+@Article{bhatnagar93,
+ author = "M. Bhatnagar and B. J. Baliga",
+ journal = "Electron Devices, IEEE Transactions on",
+ title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power
+ devices",
+ year = "1993",
+ month = mar,
+ volume = "40",
+ number = "3",
+ pages = "645--655",
+ keywords = "3C-SiC;50 to 5000 V;6H-SiC;Schottky
+ rectifiers;Si;SiC;breakdown voltages;drift region
+ properties;output characteristics;power MOSFETs;power
+ semiconductor devices;switching characteristics;thermal
+ analysis;Schottky-barrier diodes;electric breakdown of
+ solids;insulated gate field effect transistors;power
+ transistors;semiconductor materials;silicon;silicon
+ compounds;solid-state rectifiers;thermal analysis;",
+ doi = "10.1109/16.199372",
+ ISSN = "0018-9383",
+ notes = "comparison 3c 6h sic and si devices",
+}
+
+@Article{neudeck94,
+ author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J.
+ A. Powell and C. S. Salupo and L. G. Matus",
+ journal = "Electron Devices, IEEE Transactions on",
+ title = "Electrical properties of epitaxial 3{C}- and
+ 6{H}-Si{C} p-n junction diodes produced side-by-side on
+ 6{H}-Si{C} substrates",
+ year = "1994",
+ month = may,
+ volume = "41",
+ number = "5",
+ pages = "826--835",
+ keywords = "20 nA;200 micron;300 to 1100 V;3C-SiC layers;400
+ C;6H-SiC layers;6H-SiC substrates;CVD
+ process;SiC;chemical vapor deposition;doping;electrical
+ properties;epitaxial layers;light
+ emission;low-tilt-angle 6H-SiC substrates;p-n junction
+ diodes;polytype;rectification characteristics;reverse
+ leakage current;reverse voltages;temperature;leakage
+ currents;power electronics;semiconductor
+ diodes;semiconductor epitaxial layers;semiconductor
+ growth;semiconductor materials;silicon
+ compounds;solid-state rectifiers;substrates;vapour
+ phase epitaxial growth;",
+ doi = "10.1109/16.285038",
+ ISSN = "0018-9383",
+ notes = "comparison 6h 3c sic, cvd of 3c and 6h on single 6h
+ substrate",
+}
projects / lectures / latex.git / blobdiff