finished sic hetero on si (refs)

[lectures/latex.git] / bibdb / bibdb.bib

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index 26f0608..83dedd2 100644 (file)
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -3476,3 +3476,72 @@
   doi =          "10.1063/1.360980",
   notes =        "apb model",
 }
+
+@Article{henke95,
+  author =       "S. Henke and B. Stritzker and B. Rauschenbach",
+  collaboration = "",
+  title =        "Synthesis of epitaxial beta-Si{C} by {C}[sub 60]
+                 carbonization of silicon",
+  publisher =    "AIP",
+  year =         "1995",
+  journal =      "Journal of Applied Physics",
+  volume =       "78",
+  number =       "3",
+  pages =        "2070--2073",
+  keywords =     "SILICON CARBIDES; THIN FILMS; EPITAXY; CARBONIZATION;
+                 FULLERENES; ANNEALING; XRD; RBS; TWINNING; CRYSTAL
+                 STRUCTURE",
+  URL =          "http://link.aip.org/link/?JAP/78/2070/1",
+  doi =          "10.1063/1.360184",
+  notes =        "ssmbe of sic on si, lower temperatures",
+}
+
+@Article{fuyuki97,
+  author =       "T. Fuyuki and T. Hatayama and H. Matsunami",
+  title =        "Heterointerface Control and Epitaxial Growth of
+                 3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy",
+  publisher =    "WILEY-VCH Verlag",
+  year =         "1997",
+  journal =      "physica status solidi (b)",
+  volume =       "202",
+  pages =        "359--378",
+  notes =        "3c-sic heteroepitaxial growth on si by gsmbe, lower
+                 temperatures 750",
+}
+
+@Article{takaoka98,
+  title =        "Initial stage of Si{C} growth on Si(1 0 0) surface",
+  journal =      "Journal of Crystal Growth",
+  volume =       "183",
+  number =       "1-2",
+  pages =        "175--182",
+  year =         "1998",
+  note =         "",
+  ISSN =         "0022-0248",
+  doi =          "DOI: 10.1016/S0022-0248(97)00391-6",
+  URL =          "http://www.sciencedirect.com/science/article/B6TJ6-3W8STD4-V/2/8de695de037d5e20b8326c4107547918",
+  author =       "T. Takaoka and H. Saito and Y. Igari and I. Kusunoki",
+  keywords =     "Reflection high-energy electron diffraction (RHEED)",
+  keywords =     "Scanning electron microscopy (SEM)",
+  keywords =     "Silicon carbide",
+  keywords =     "Silicon",
+  keywords =     "Island growth",
+  notes =        "lower temperature, 550-700",
+}
+
+@Article{hatayama95,
+  title =        "Low-temperature heteroepitaxial growth of cubic Si{C}
+                 on Si using hydrocarbon radicals by gas source
+                 molecular beam epitaxy",
+  journal =      "Journal of Crystal Growth",
+  volume =       "150",
+  number =       "Part 2",
+  pages =        "934--938",
+  year =         "1995",
+  note =         "",
+  ISSN =         "0022-0248",
+  doi =          "DOI: 10.1016/0022-0248(95)80077-P",
+  URL =          "http://www.sciencedirect.com/science/article/B6TJ6-47RY2F6-1P/2/49acd5c4545dd9fd3486f70a6c25586e",
+  author =       "Tomoaki Hatayama and Yoichiro Tarui and Takashi Fuyuki
+                 and Hiroyuki Matsunami",
+}