finished sic hetero on si (refs)

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index 26f0608..83dedd2 100644 (file)
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -3476,3 +3476,72 @@
   doi =          "10.1063/1.360980",
   notes =        "apb model",
 }
+
+@Article{henke95,
+  author =       "S. Henke and B. Stritzker and B. Rauschenbach",
+  collaboration = "",
+  title =        "Synthesis of epitaxial beta-Si{C} by {C}[sub 60]
+                 carbonization of silicon",
+  publisher =    "AIP",
+  year =         "1995",
+  journal =      "Journal of Applied Physics",
+  volume =       "78",
+  number =       "3",
+  pages =        "2070--2073",
+  keywords =     "SILICON CARBIDES; THIN FILMS; EPITAXY; CARBONIZATION;
+                 FULLERENES; ANNEALING; XRD; RBS; TWINNING; CRYSTAL
+                 STRUCTURE",
+  URL =          "http://link.aip.org/link/?JAP/78/2070/1",
+  doi =          "10.1063/1.360184",
+  notes =        "ssmbe of sic on si, lower temperatures",
+}
+
+@Article{fuyuki97,
+  author =       "T. Fuyuki and T. Hatayama and H. Matsunami",
+  title =        "Heterointerface Control and Epitaxial Growth of
+                 3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy",
+  publisher =    "WILEY-VCH Verlag",
+  year =         "1997",
+  journal =      "physica status solidi (b)",
+  volume =       "202",
+  pages =        "359--378",
+  notes =        "3c-sic heteroepitaxial growth on si by gsmbe, lower
+                 temperatures 750",
+}
+
+@Article{takaoka98,
+  title =        "Initial stage of Si{C} growth on Si(1 0 0) surface",
+  journal =      "Journal of Crystal Growth",
+  volume =       "183",
+  number =       "1-2",
+  pages =        "175--182",
+  year =         "1998",
+  note =         "",
+  ISSN =         "0022-0248",
+  doi =          "DOI: 10.1016/S0022-0248(97)00391-6",
+  URL =          "http://www.sciencedirect.com/science/article/B6TJ6-3W8STD4-V/2/8de695de037d5e20b8326c4107547918",
+  author =       "T. Takaoka and H. Saito and Y. Igari and I. Kusunoki",
+  keywords =     "Reflection high-energy electron diffraction (RHEED)",
+  keywords =     "Scanning electron microscopy (SEM)",
+  keywords =     "Silicon carbide",
+  keywords =     "Silicon",
+  keywords =     "Island growth",
+  notes =        "lower temperature, 550-700",
+}
+
+@Article{hatayama95,
+  title =        "Low-temperature heteroepitaxial growth of cubic Si{C}
+                 on Si using hydrocarbon radicals by gas source
+                 molecular beam epitaxy",
+  journal =      "Journal of Crystal Growth",
+  volume =       "150",
+  number =       "Part 2",
+  pages =        "934--938",
+  year =         "1995",
+  note =         "",
+  ISSN =         "0022-0248",
+  doi =          "DOI: 10.1016/0022-0248(95)80077-P",
+  URL =          "http://www.sciencedirect.com/science/article/B6TJ6-47RY2F6-1P/2/49acd5c4545dd9fd3486f70a6c25586e",
+  author =       "Tomoaki Hatayama and Yoichiro Tarui and Takashi Fuyuki
+                 and Hiroyuki Matsunami",
+}

diff --git a/posic/thesis/sic.tex b/posic/thesis/sic.tex
index 1e6d91c..ee9f2c8 100644 (file)
--- a/posic/thesis/sic.tex
+++ b/posic/thesis/sic.tex
@@ -171,7 +171,7 @@ Next to surface morphology defects such as pits and islands, the main defects in
 APB defects, which constitute the primary residual defects in thick layers, are formed near surface terraces that differ in a single-atom-height step resulting in domains of SiC separated by a boundary, which consists of either Si-Si or C-C bonds due to missing or disturbed sublattice information \cite{desjardins96,kitabatake97}.
 However, the number of such defects can be reduced by off-axis growth on a Si \hkl(0 0 1) substrate miscut towards \hkl[1 1 0] by \unit[2]{$^{\circ}$}-\unit[4]{$^{\circ}$} \cite{shibahara86,powell87_2}.
 This results in the thermodynamically favored growth of a single phase due to the uni-directional contraction of Si-C-Si bond chains perpendicular to the terrace steps edges during carbonization and the fast growth parallel to the terrace edges during growth under Si rich conditions \cite{kitabatake97}.
-By MBE \cite{}, lower process temperatures than these typically employed in CVD have been realized, which is essential for limiting thermal stresses and to avoid resulting substrate bending, a key issue in obtaining large area 3C-SiC surfaces.
+By MBE, lower process temperatures than these typically employed in CVD have been realized \cite{hatayama95,henke95,fuyuki97,takaoka98}, which is essential for limiting thermal stresses and to avoid resulting substrate bending, a key issue in obtaining large area 3C-SiC surfaces.
 In summary, the almost universal use of Si has allowed significant progress in the understanding of heteroepitaxial growth of SiC on Si.
 However, mismatches in the thermal expansion coefficient and the lattice parameter cause a considerably high concentration of various defects, which is responsible for structural and electrical qualities that are not not yet statisfactory.