@Article{batra87,
title = "Molecular-dynamics study of self-interstitials in
silicon",
- author = "S. Ciraci {Inder P. Batra, Farid F. Abraham}",
+ author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
journal = "Phys. Rev. B",
volume = "35",
number = "18",
Tight-binding molecular dynamics studies of
self-diffusion, interstitial-vacancy recombination, and
formation volumes",
- author = "T. Diaz de la Rubia {M. Tang, L. Colombo, J. Zhu}",
+ author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
+ Rubia",
journal = "Phys. Rev. B",
volume = "55",
number = "21",
@Article{gao2001,
title = "Ab initio and empirical-potential studies of defect
properties in $3{C}-Si{C}$",
- author = "L. R. Corrales {F. Gao, E. J. Bylaska, W. J. Weber}",
+ author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
+ Corrales",
journal = "Phys. Rev. B",
volume = "64",
number = "24",
@Article{capazd94,
title = "Identification of the migration path of interstitial
carbon in silicon",
- author = "J. D. Joannopoulos {R. B. Capazd, A Dal Pino}",
+ author = "R. B. Capazd and A. Dal Pino and J. D. Joannopoulos",
journal = "Phys. Rev. B",
volume = "50",
number = "11",
@Article{laveant2002,
title = "Epitaxy of carbon-rich silicon with {MBE}",
- author = "U. Gosele {P. Laveant, G. Gerth, P. Werner}",
+ author = "P. Laveant and G. Gerth and P. Werner and U.
+ G{\"o}sele",
journal = "Materials Science and Engineering B",
volume = "89",
number = "1-3",
@Article{zirkelbach2007,
title = "Monte Carlo simulation study of a selforganisation
process leading to ordered precipitate structures",
- author = "B. Stritzker {F. Zirkelbach, M. H{"}aberlen, J.K.N.
- Lindner}",
+ author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
+ and B. Stritzker",
journal = "Nucl. Instr. and Meth. B",
volume = "257",
number = "1--2",
title = "Monte-Carlo simulation study of the self-organization
of nanometric amorphous precipitates in regular arrays
during ion irradiation",
- author = "B. Stritzker {F. Zirkelbach, M. H{"}aberlen, J.K.N.
- Lindner}",
+ author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
+ and B. Stritzker",
journal = "Nucl. Instr. and Meth. B",
volume = "242",
number = "1--2",
title = "Modelling of a selforganization process leading to
periodic arrays of nanometric amorphous precipitates by
ion irradiation",
- author = "B. Stritzker {F. Zirkelbach, M. H{"}aberlen, J.K.N.
- Lindner}",
+ author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
+ and B. Stritzker",
journal = "Comp. Mater. Sci.",
volume = "33",
number = "1--3",
NETHERLANDS",
}
+@Article{lindner99,
+ title = "Controlling the density distribution of Si{C}
+ nanocrystals for the ion beam synthesis of buried Si{C}
+ layers in silicon",
+ journal = "Nuclear Instruments and Methods in Physics Research
+ Section B: Beam Interactions with Materials and Atoms",
+ volume = "147",
+ number = "1-4",
+ pages = "249--255",
+ year = "1999",
+ note = "",
+ ISSN = "0168-583X",
+ doi = "DOI: 10.1016/S0168-583X(98)00598-9",
+ URL = "http://www.sciencedirect.com/science/article/B6TJN-3YMWWDY-1H/2/ad53e614f783b2a7474aecb936dd0169",
+ author = "J. K. N. Lindner and B. Stritzker",
+ notes = "two-step implantation process",
+}
+
+@Article{lindner99_2,
+ title = "Mechanisms in the ion beam synthesis of Si{C} layers
+ in silicon",
+ journal = "Nuclear Instruments and Methods in Physics Research
+ Section B: Beam Interactions with Materials and Atoms",
+ volume = "148",
+ number = "1-4",
+ pages = "528--533",
+ year = "1999",
+ note = "",
+ ISSN = "0168-583X",
+ doi = "DOI: 10.1016/S0168-583X(98)00787-3",
+ URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85",
+ author = "J. K. N. Lindner and B. Stritzker",
+}
+
+@Article{lindner01,
+ title = "Ion beam synthesis of buried Si{C} layers in silicon:
+ Basic physical processes",
+ journal = "Nuclear Instruments and Methods in Physics Research
+ Section B: Beam Interactions with Materials and Atoms",
+ volume = "178",
+ number = "1-4",
+ pages = "44--54",
+ year = "2001",
+ note = "",
+ ISSN = "0168-583X",
+ doi = "DOI: 10.1016/S0168-583X(01)00504-3",
+ URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3",
+ author = "Jörg K. N. Lindner",
+}
+
@Article{lindner02,
title = "High-dose carbon implantations into silicon:
fundamental studies for new technological tricks",
URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
author = "Yu. M. Tairov and V. F. Tsvetkov",
}
+
+@Article{powell87,
+ author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
+ Kuczmarski",
+ title = "Growth and Characterization of Cubic Si{C}
+ Single-Crystal Films on Si",
+ publisher = "ECS",
+ year = "1987",
+ journal = "Journal of The Electrochemical Society",
+ volume = "134",
+ number = "6",
+ pages = "1558--1565",
+ keywords = "semiconductor materials; silicon compounds; carbon
+ compounds; crystal morphology; electron mobility",
+ URL = "http://link.aip.org/link/?JES/134/1558/1",
+ doi = "10.1149/1.2100708",
+ notes = "blue light emitting diodes (led)",
+}
+
+@Article{kimoto93,
+ author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
+ and Hiroyuki Matsunami",
+ title = "Growth mechanism of 6{H}-Si{C} in step-controlled
+ epitaxy",
+ publisher = "AIP",
+ year = "1993",
+ journal = "Journal of Applied Physics",
+ volume = "73",
+ number = "2",
+ pages = "726--732",
+ keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE
+ RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
+ VAPOR DEPOSITION",
+ URL = "http://link.aip.org/link/?JAP/73/726/1",
+ doi = "10.1063/1.353329",
+}
+
+@Article{powell90,
+ author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
+ J. Choyke and J. L. Bradshaw and L. Henderson and M.
+ Yoganathan and J. Yang and P. Pirouz",
+ collaboration = "",
+ title = "Growth of improved quality 3{C}-Si{C} films on
+ 6{H}-Si{C} substrates",
+ publisher = "AIP",
+ year = "1990",
+ journal = "Applied Physics Letters",
+ volume = "56",
+ number = "14",
+ pages = "1353--1355",
+ keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
+ PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON
+ MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR
+ PHASE EPITAXY",
+ URL = "http://link.aip.org/link/?APL/56/1353/1",
+ doi = "10.1063/1.102512",
+}
+
+@Article{fissel95,
+ title = "Epitaxial growth of Si{C} thin films on Si-stabilized
+ [alpha]-Si{C}(0001) at low temperatures by solid-source
+ molecular beam epitaxy",
+ journal = "Journal of Crystal Growth",
+ volume = "154",
+ number = "1-2",
+ pages = "72--80",
+ year = "1995",
+ notes = "solid source mbe",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(95)00170-0",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
+ author = "A. Fissel and U. Kaiser and E. Ducke and B. Schröter
+ and W. Richter",
+}
+
+@Article{borders71,
+ author = "J. A. Borders and S. T. Picraux and W. Beezhold",
+ collaboration = "",
+ title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
+ {IMPLANTATION}",
+ publisher = "AIP",
+ year = "1971",
+ journal = "Applied Physics Letters",
+ volume = "18",
+ number = "11",
+ pages = "509--511",
+ URL = "http://link.aip.org/link/?APL/18/509/1",
+ notes = "first time sic by ibs",
+ doi = "10.1063/1.1653516",
+}
+
+@Article{reeson87,
+ author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
+ J. Davis and G. E. Celler",
+ collaboration = "",
+ title = "Formation of buried layers of beta-Si{C} using ion
+ beam synthesis and incoherent lamp annealing",
+ publisher = "AIP",
+ year = "1987",
+ journal = "Applied Physics Letters",
+ volume = "51",
+ number = "26",
+ pages = "2242--2244",
+ keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
+ IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
+ URL = "http://link.aip.org/link/?APL/51/2242/1",
+ doi = "10.1063/1.98953",
+ notes = "nice tem images, sic by ibs",
+}
+
+@Article{scace59,
+ author = "R. I. Scace and G. A. Slack",
+ collaboration = "",
+ title = "Solubility of Carbon in Silicon and Germanium",
+ publisher = "AIP",
+ year = "1959",
+ journal = "The Journal of Chemical Physics",
+ volume = "30",
+ number = "6",
+ pages = "1551--1555",
+ URL = "http://link.aip.org/link/?JCP/30/1551/1",
+ doi = "10.1063/1.1730236",
+ notes = "solubility of c in c-si",
+}
+
+@Article{cowern96,
+ author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
+ F. W. Saris and W. Vandervorst",
+ collaboration = "",
+ title = "Role of {C} and {B} clusters in transient diffusion of
+ {B} in silicon",
+ publisher = "AIP",
+ year = "1996",
+ journal = "Applied Physics Letters",
+ volume = "68",
+ number = "8",
+ pages = "1150--1152",
+ keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
+ DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
+ SILICON",
+ URL = "http://link.aip.org/link/?APL/68/1150/1",
+ doi = "10.1063/1.115706",
+ notes = "suppression of transient enhanced diffusion (ted)",
+}
+
+@Article{stolk95,
+ title = "Implantation and transient boron diffusion: the role
+ of the silicon self-interstitial",
+ journal = "Nuclear Instruments and Methods in Physics Research
+ Section B: Beam Interactions with Materials and Atoms",
+ volume = "96",
+ number = "1-2",
+ pages = "187--195",
+ year = "1995",
+ note = "Selected Papers of the Tenth International Conference
+ on Ion Implantation Technology (IIT '94)",
+ ISSN = "0168-583X",
+ doi = "DOI: 10.1016/0168-583X(94)00481-1",
+ URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
+ author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
+ and J. M. Poate",
+}
projects / lectures / latex.git / blobdiff