notes = "virial derivation for 3-body tersoff potential",
}
+@Article{nielsen83,
+ title = "First-Principles Calculation of Stress",
+ author = "O. H. Nielsen and Richard M. Martin",
+ journal = "Phys. Rev. Lett.",
+ volume = "50",
+ number = "9",
+ pages = "697--700",
+ numpages = "3",
+ year = "1983",
+ month = feb,
+ doi = "10.1103/PhysRevLett.50.697",
+ publisher = "American Physical Society",
+ notes = "generalization of virial theorem",
+}
+
+@Article{nielsen85,
+ title = "Quantum-mechanical theory of stress and force",
+ author = "O. H. Nielsen and Richard M. Martin",
+ journal = "Phys. Rev. B",
+ volume = "32",
+ number = "6",
+ pages = "3780--3791",
+ numpages = "11",
+ year = "1985",
+ month = sep,
+ doi = "10.1103/PhysRevB.32.3780",
+ publisher = "American Physical Society",
+ notes = "dft virial stress and forces",
+}
+
@Article{moissan04,
author = "Henri Moissan",
title = "Nouvelles recherches sur la météorité de Cañon
author = "W. Wesch",
}
+@Article{davis91,
+ author = "R. F. Davis and G. Kelner and M. Shur and J. W.
+ Palmour and J. A. Edmond",
+ journal = "Proceedings of the IEEE",
+ title = "Thin film deposition and microelectronic and
+ optoelectronic device fabrication and characterization
+ in monocrystalline alpha and beta silicon carbide",
+ year = "1991",
+ month = may,
+ volume = "79",
+ number = "5",
+ pages = "677--701",
+ keywords = "HBT;LED;MESFET;MOSFET;Schottky contacts;Schottky
+ diode;SiC;dry etching;electrical
+ contacts;etching;impurity incorporation;optoelectronic
+ device fabrication;solid-state devices;surface
+ chemistry;Schottky effect;Schottky gate field effect
+ transistors;Schottky-barrier
+ diodes;etching;heterojunction bipolar
+ transistors;insulated gate field effect
+ transistors;light emitting diodes;semiconductor
+ materials;semiconductor thin films;silicon compounds;",
+ doi = "10.1109/5.90132",
+ ISSN = "0018-9219",
+ notes = "sic growth methods",
+}
+
@Article{morkoc94,
author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
Lin and B. Sverdlov and M. Burns",
notes = "3c-sic on 6h-sic, cvd, reduced temperature",
}
+@Article{kaneda87,
+ title = "{MBE} growth of 3{C}·Si{C}/6·Si{C} and the electric
+ properties of its p-n junction",
+ journal = "Journal of Crystal Growth",
+ volume = "81",
+ number = "1-4",
+ pages = "536--542",
+ year = "1987",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(87)90449-0",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46X9W77-3F/2/864b2d86faa794252e1d1f16c99a9cf1",
+ author = "Shigeo Kaneda and Yoshiki Sakamoto and Tadashi Mihara
+ and Takao Tanaka",
+ notes = "first time ssmbe of 3c-sic on 6h-sic",
+}
+
@Article{fissel95,
title = "Epitaxial growth of Si{C} thin films on Si-stabilized
[alpha]-Si{C}(0001) at low temperatures by solid-source
author = "Tomoaki Hatayama and Yoichiro Tarui and Takashi Fuyuki
and Hiroyuki Matsunami",
}
+
+@Article{heine91,
+ author = "Volker Heine and Ching Cheng and Richard J. Needs",
+ title = "The Preference of Silicon Carbide for Growth in the
+ Metastable Cubic Form",
+ journal = "Journal of the American Ceramic Society",
+ volume = "74",
+ number = "10",
+ publisher = "Blackwell Publishing Ltd",
+ ISSN = "1551-2916",
+ URL = "http://dx.doi.org/10.1111/j.1151-2916.1991.tb06811.x",
+ doi = "10.1111/j.1151-2916.1991.tb06811.x",
+ pages = "2630--2633",
+ keywords = "silicon carbide, crystal growth, crystal structure,
+ calculations, stability",
+ year = "1991",
+ notes = "3c-sic metastable, 3c-sic preferred growth, sic
+ polytype dft calculation refs",
+}
+
+@Article{allendorf91,
+ title = "The adsorption of {H}-atoms on polycrystalline
+ [beta]-silicon carbide",
+ journal = "Surface Science",
+ volume = "258",
+ number = "1-3",
+ pages = "177--189",
+ year = "1991",
+ note = "",
+ ISSN = "0039-6028",
+ doi = "DOI: 10.1016/0039-6028(91)90912-C",
+ URL = "http://www.sciencedirect.com/science/article/B6TVX-46T3BSB-24V/2/534f1f4786088ceb88b6d31eccb096b3",
+ author = "Mark D. Allendorf and Duane A. Outka",
+ notes = "h adsorption on 3c-sic",
+}
+
+@Article{eaglesham93,
+ author = "D. J. Eaglesham and F. C. Unterwald and H. Luftman and
+ D. P. Adams and S. M. Yalisove",
+ collaboration = "",
+ title = "Effect of {H} on Si molecular-beam epitaxy",
+ publisher = "AIP",
+ year = "1993",
+ journal = "Journal of Applied Physics",
+ volume = "74",
+ number = "11",
+ pages = "6615--6618",
+ keywords = "SILICON; MOLECULAR BEAM EPITAXY; HYDROGEN; SURFACE
+ CONTAMINATION; SIMS; SEGREGATION; IMPURITIES;
+ DIFFUSION; ADSORPTION",
+ URL = "http://link.aip.org/link/?JAP/74/6615/1",
+ doi = "10.1063/1.355101",
+ notes = "h incorporation on si surface, lower surface
+ mobility",
+}
projects / lectures / latex.git / blobdiff