silicon",
}
+@Article{sahli05,
+ title = "Ab initio molecular dynamics simulation of
+ self-interstitial diffusion in silicon",
+ author = "Beat Sahli and Wolfgang Fichtner",
+ journal = "Phys. Rev. B",
+ volume = "72",
+ number = "24",
+ pages = "245210",
+ numpages = "6",
+ year = "2005",
+ month = dec,
+ doi = "10.1103/PhysRevB.72.245210",
+ publisher = "American Physical Society",
+ notes = "si self int, diffusion, barrier height, voronoi
+ mapping applied",
+}
+
+@Article{hobler05,
+ title = "Ab initio calculations of the interaction between
+ native point defects in silicon",
+ journal = "Materials Science and Engineering: B",
+ volume = "124-125",
+ number = "",
+ pages = "368--371",
+ year = "2005",
+ note = "EMRS 2005, Symposium D - Materials Science and Device
+ Issues for Future Technologies",
+ ISSN = "0921-5107",
+ doi = "DOI: 10.1016/j.mseb.2005.08.072",
+ URL = "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4",
+ author = "G. Hobler and G. Kresse",
+ notes = "vasp intrinsic si defect interaction study, capture
+ radius",
+}
+
@Article{ma10,
title = "Ab initio study of self-diffusion in silicon over a
wide temperature range: Point defect states and
month = oct,
doi = "10.1103/PhysRevB.58.9845",
publisher = "American Physical Society",
- notes = "carbon pairs in si",
+ notes = "c_i c_s pair configuration, theoretical results",
+}
+
+@Article{song90_2,
+ title = "Bistable interstitial-carbon--substitutional-carbon
+ pair in silicon",
+ author = "L. W. Song and X. D. Zhan and B. W. Benson and G. D.
+ Watkins",
+ journal = "Phys. Rev. B",
+ volume = "42",
+ number = "9",
+ pages = "5765--5783",
+ numpages = "18",
+ year = "1990",
+ month = sep,
+ doi = "10.1103/PhysRevB.42.5765",
+ publisher = "American Physical Society",
+ notes = "c_i c_s pair configuration, experimental results",
+}
+
+@Article{liu02,
+ author = "Chun-Li Liu and Wolfgang Windl and Len Borucki and
+ Shifeng Lu and Xiang-Yang Liu",
+ collaboration = "",
+ title = "Ab initio modeling and experimental study of {C}--{B}
+ interactions in Si",
+ publisher = "AIP",
+ year = "2002",
+ journal = "Applied Physics Letters",
+ volume = "80",
+ number = "1",
+ pages = "52--54",
+ keywords = "silicon; boron; carbon; elemental semiconductors;
+ impurity-defect interactions; ab initio calculations;
+ secondary ion mass spectra; diffusion; interstitials",
+ URL = "http://link.aip.org/link/?APL/80/52/1",
+ doi = "10.1063/1.1430505",
+ notes = "c-c 100 split, lower as a and b states of capaz",
}
@Article{dal_pino93,
volume = "",
number = "",
pages = "675--678",
- keywords = "beta;-SiC precipitates;30 s;700 to 1300 C;C
- atom/radiation induced defect interaction;C depth
- distribution;C precipitation;C-Si defects;C-Si
- dimers;CZ Si;HREM;Si:C;TEM;buried layer morphology;high
- energy ion implantation;ion implantation;metastable
- agglomerates;microdefects;positron annihilation
- spectroscopy;rapid thermal annealing;secondary ion mass
- spectrometry;vacancy clusters;buried
- layers;carbon;elemental semiconductors;impurity-defect
- interactions;ion implantation;positron
- annihilation;precipitation;rapid thermal
- annealing;secondary ion mass
- spectra;silicon;transmission electron
- microscopy;vacancies (crystal);",
doi = "10.1109/IIT.1996.586497",
ISSN = "",
notes = "c-si agglomerates dumbbells",
}
+@Article{werner98,
+ author = "P. Werner and U. G{\"{o}}sele and H.-J. Gossmann and
+ D. C. Jacobson",
+ collaboration = "",
+ title = "Carbon diffusion in silicon",
+ publisher = "AIP",
+ year = "1998",
+ journal = "Applied Physics Letters",
+ volume = "73",
+ number = "17",
+ pages = "2465--2467",
+ keywords = "silicon; carbon; elemental semiconductors; diffusion;
+ secondary ion mass spectra; semiconductor epitaxial
+ layers; annealing; impurity-defect interactions;
+ impurity distribution",
+ URL = "http://link.aip.org/link/?APL/73/2465/1",
+ doi = "10.1063/1.122483",
+ notes = "c diffusion in si, kick out mechnism",
+}
+
@Article{strane94,
author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
Picraux and J. K. Watanabe and J. W. Mayer",
}
@Article{zirkelbach10a,
- title = "Defects in Carbon implanted Silicon calculated by
- classical potentials and first principles methods",
- journal = "to be published",
- volume = "",
- number = "",
+ title = "Defects in carbon implanted silicon calculated by
+ classical potentials and first-principles methods",
+ journal = "Phys. Rev. B",
+ volume = "82",
+ number = "9",
pages = "",
year = "2010",
author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
- K. N. Lindner and W. G. Schmidtd and E. Rauls",
+ K. N. Lindner and W. G. Schmidt and E. Rauls",
}
@Article{zirkelbach10b,
pages = "",
year = "2010",
author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
- K. N. Lindner and W. G. Schmidtd and E. Rauls",
+ K. N. Lindner and W. G. Schmidt and E. Rauls",
}
@Article{zirkelbach10c,
pages = "",
year = "2010",
author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
- K. N. Lindner and W. G. Schmidtd and E. Rauls",
+ K. N. Lindner and W. G. Schmidt and E. Rauls",
}
@Article{lindner99,
ISSN = "0928-4931",
doi = "DOI: 10.1016/j.msec.2005.09.099",
URL = "http://www.sciencedirect.com/science/article/B6TXG-4HSXVVM-1/2/5b0e351198cc2e8f5f4446a80a73d04a",
- author = "J. K. N. Lindner and M. Häberlen and G. Thorwarth and
- B. Stritzker",
+ author = "J. K. N. Lindner and M. H{\"a}berlen and G. Thorwarth
+ and B. Stritzker",
notes = "c int diffusion barrier",
}
carbon defect, formation energies",
}
+@Article{besson91,
+ title = "Electronic structure of interstitial carbon in
+ silicon",
+ author = "Morgan Besson and Gary G. DeLeo",
+ journal = "Phys. Rev. B",
+ volume = "43",
+ number = "5",
+ pages = "4028--4033",
+ numpages = "5",
+ year = "1991",
+ month = feb,
+ doi = "10.1103/PhysRevB.43.4028",
+ publisher = "American Physical Society",
+}
+
@Article{kaxiras96,
title = "Review of atomistic simulations of surface diffusion
and growth on semiconductors",
projects / lectures / latex.git / blobdiff