blub

[lectures/latex.git] / bibdb / bibdb.bib

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index fe532d2..d1ffeb0 100644 (file)
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -2242,6 +2242,22 @@
   notes =        "cvd of 3c-sic on si, sic buffer layer",
 }
 
+@Article{nagasawa06,
+  author =       "H. Nagasawa and K. Yagi and T. Kawahara and N. Hatta",
+  title =        "Reducing Planar Defects in 3{C}¿Si{C}",
+  journal =      "Chemical Vapor Deposition",
+  volume =       "12",
+  number =       "8-9",
+  publisher =    "WILEY-VCH Verlag",
+  ISSN =         "1521-3862",
+  URL =          "http://dx.doi.org/10.1002/cvde.200506466",
+  doi =          "10.1002/cvde.200506466",
+  pages =        "502--508",
+  keywords =     "Defect structures, Epitaxy, Silicon carbide",
+  year =         "2006",
+  notes =        "cvd on si",
+}
+
 @Article{nishino87,
   author =       "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
                  and Hiroyuki Matsunami",
@@ -4655,6 +4671,58 @@
   notes =        "sic data, advantages of 3c sic",
 }
 
+@InProceedings{pribble02,
+  author =       "W. L. Pribble and J. W. Palmour and S. T. Sheppard and
+                 R. P. Smith and S. T. Allen and T. J. Smith and Z. Ring
+                 and J. J. Sumakeris and A. W. Saxler and J. W.
+                 Milligan",
+  booktitle =    "Microwave Symposium Digest, 2002 IEEE MTT-S
+                 International",
+  title =        "Applications of Si{C} {MESFET}s and Ga{N} {HEMT}s in
+                 power amplifier design",
+  year =         "2002",
+  month =        "",
+  volume =       "3",
+  number =       "",
+  pages =        "1819--1822",
+  doi =          "10.1109/MWSYM.2002.1012216",
+  ISSN =         "",
+  notes =        "hdtv",
+}
+
+@InProceedings{temcamani01,
+  author =       "F. Temcamani and P. Pouvil and O. Noblanc and C.
+                 Brylinski and P. Bannelier and B. Darges and J. P.
+                 Prigent",
+  booktitle =    "Microwave Symposium Digest, 2001 IEEE MTT-S
+                 International",
+  title =        "Silicon carbide {MESFET}s performances and application
+                 in broadcast power amplifiers",
+  year =         "2001",
+  month =        "",
+  volume =       "2",
+  number =       "",
+  pages =        "641--644",
+  doi =          "10.1109/MWSYM.2001.966976",
+  ISSN =         "",
+  notes =        "hdtv",
+}
+
+@Article{pensl00,
+  author =       "Gerhard Pensl and Michael Bassler and Florin Ciobanu
+                 and Valeri Afanas'ev and Hiroshi Yano and Tsunenobu
+                 Kimoto and Hiroyuki Matsunami",
+  title =        "Traps at the Si{C}/Si{O2}-Interface",
+  journal =      "MRS Online Proceedings Library",
+  volume =       "640",
+  number =       "",
+  pages =        "",
+  year =         "2000",
+  doi =          "10.1557/PROC-640-H3.2",
+  URL =          "http://dx.doi.org/10.1557/PROC-640-H3.2",
+  eprint =       "http://journals.cambridge.org/article_S1946427400647061",
+}
+
 @Article{bhatnagar93,
   author =       "M. Bhatnagar and B. J. Baliga",
   journal =      "Electron Devices, IEEE Transactions on",
@@ -5160,3 +5228,46 @@
   year =         "1994",
   publisher =    "Suhrkamp",
 }
+
+@Misc{attenberger03,
+  author =       "Wilfried Attenberger and Jörg Lindner and Bernd
+                 Stritzker",
+  title =        "A {method} {for} {forming} {a} {layered}
+                 {semiconductor} {structure} {and} {corresponding}
+                 {structure}",
+  year =         "2003",
+  month =        apr,
+  day =          "24",
+  note =         "WO 2003/034484 A3R4",
+  version =      "A3R4",
+  howpublished = "Patent Application",
+  nationality =  "WO",
+  URL =          "http://www.patentlens.net/patentlens/patent/WO_2003_034484_A3R4/en/",
+  filing_num =   "EP0211423",
+  yearfiled =    "2002",
+  monthfiled =   "10",
+  dayfiled =     "11",
+  pat_refs =     "",
+  ipc_class =    "7B 81C 1/00 B; 7H 01L 21/04 B; 7H 01L 21/265 B; 7H 01L
+                 21/322 B; 7H 01L 21/324 B; 7H 01L 21/74 A; 7H 01L
+                 21/762 B; 7H 01L 29/165 B; 7H 01L 33/00 B",
+  us_class =     "",
+  abstract =     "The following invention provides a method for forming
+                 a layered semiconductor structure having a layer (5) of
+                 a first semiconductor material on a substrate (1; 1')
+                 of at least one second semiconductor material,
+                 comprising the steps of: providing said substrate (1;
+                 1'); burying said layer (5) of said first semiconductor
+                 material in said substrate (1; 1'), said buried layer
+                 (5) having an upper surface (105) and a lower surface
+                 (105) and dividing said substrate (1; 1') into an upper
+                 part (1a) and a lower part (1b; 1b', 1c); creating a
+                 buried damage layer (10; 10'; 10'', 100'') which at
+                 least partly adjoins and/or at least partly includes
+                 said upper surface (105) of said buried layer (5); and
+                 removing said upper part (1a) of said substrate (1; 1')
+                 and said buried damage layer (10; 10'; 10'', 100'') for
+                 exposing said buried layer (5). The invention also
+                 provides a corresponding layered semiconductor
+                 structure.",
+}