notes = "derivation of albe bond order formalism",
}
+@Article{newman65,
+ title = "Vibrational absorption of carbon in silicon",
+ journal = "Journal of Physics and Chemistry of Solids",
+ volume = "26",
+ number = "2",
+ pages = "373--379",
+ year = "1965",
+ note = "",
+ ISSN = "0022-3697",
+ doi = "DOI: 10.1016/0022-3697(65)90166-6",
+ URL = "http://www.sciencedirect.com/science/article/B6TXR-46RVGM8-1C/2/d50c4df37065a75517d63a04af18d667",
+ author = "R. C. Newman and J. B. Willis",
+ notes = "c impurity dissolved as substitutional c in si",
+}
+
+@Article{baker68,
+ author = "J. A. Baker and T. N. Tucker and N. E. Moyer and R. C.
+ Buschert",
+ collaboration = "",
+ title = "Effect of Carbon on the Lattice Parameter of Silicon",
+ publisher = "AIP",
+ year = "1968",
+ journal = "Journal of Applied Physics",
+ volume = "39",
+ number = "9",
+ pages = "4365--4368",
+ URL = "http://link.aip.org/link/?JAP/39/4365/1",
+ doi = "10.1063/1.1656977",
+ notes = "lattice contraction due to subst c",
+}
+
@Article{bean71,
title = "The solubility of carbon in pulled silicon crystals",
journal = "Journal of Physics and Chemistry of Solids",
silicon",
}
+@Article{isomae93,
+ author = "Seiichi Isomae and Tsutomu Ishiba and Toshio Ando and
+ Masao Tamura",
+ collaboration = "",
+ title = "Annealing behavior of Me{V} implanted carbon in
+ silicon",
+ publisher = "AIP",
+ year = "1993",
+ journal = "Journal of Applied Physics",
+ volume = "74",
+ number = "6",
+ pages = "3815--3820",
+ keywords = "SILICON; ION IMPLANTATION; WAFERS; CARBON IONS; MEV
+ RANGE 0110; TEM; SIMS; INFRARED SPECTRA; STRAINS; DEPTH
+ PROFILES",
+ URL = "http://link.aip.org/link/?JAP/74/3815/1",
+ doi = "10.1063/1.354474",
+ notes = "c at interstitial location for rt implantation in si",
+}
+
@Article{strane96,
title = "Carbon incorporation into Si at high concentrations by
ion implantation and solid phase epitaxy",
stress, avoid sic precipitation",
}
+@Article{foell77,
+ title = "The formation of swirl defects in silicon by
+ agglomeration of self-interstitials",
+ journal = "Journal of Crystal Growth",
+ volume = "40",
+ number = "1",
+ pages = "90--108",
+ year = "1977",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(77)90034-3",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BWB4Y-44/2/bddfd69e99369473feebcdc41692dddb",
+ author = "H. Föll and U. Gösele and B. O. Kolbesen",
+ notes = "b-swirl: si + c interstitial agglomerates, c-si
+ agglomerate",
+}
+
+@Article{foell81,
+ title = "Microdefects in silicon and their relation to point
+ defects",
+ journal = "Journal of Crystal Growth",
+ volume = "52",
+ number = "Part 2",
+ pages = "907--916",
+ year = "1981",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(81)90397-3",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46MD42X-90/2/a482c31bf9e2faeed71b7109be601078",
+ author = "H. Föll and U. Gösele and B. O. Kolbesen",
+ notes = "swirl review",
+}
+
@Article{werner97,
author = "P. Werner and S. Eichler and G. Mariani and R.
K{\"{o}}gler and W. Skorupa",
notes = "c diffusion in si, kick out mechnism",
}
+@Article{kalejs84,
+ author = "J. P. Kalejs and L. A. Ladd and U. G{\"{o}}sele",
+ collaboration = "",
+ title = "Self-interstitial enhanced carbon diffusion in
+ silicon",
+ publisher = "AIP",
+ year = "1984",
+ journal = "Applied Physics Letters",
+ volume = "45",
+ number = "3",
+ pages = "268--269",
+ keywords = "PHOSPHORUS; INTERSTITIALS; SILICON; PHOSPHORUS;
+ CARBON; DIFFUSION; ANNEALING; ATOM TRANSPORT; VERY HIGH
+ TEMPERATURE; IMPURITIES",
+ URL = "http://link.aip.org/link/?APL/45/268/1",
+ doi = "10.1063/1.95167",
+ notes = "c diffusion due to si self-interstitials",
+}
+
+@Article{strane93,
+ author = "J. W. Strane and H. J. Stein and S. R. Lee and B. L.
+ Doyle and S. T. Picraux and J. W. Mayer",
+ collaboration = "",
+ title = "Metastable SiGe{C} formation by solid phase epitaxy",
+ publisher = "AIP",
+ year = "1993",
+ journal = "Applied Physics Letters",
+ volume = "63",
+ number = "20",
+ pages = "2786--2788",
+ keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; TERNARY ALLOY
+ SYSTEMS; EPITAXY; ION IMPLANTATION; METASTABLE STATES;
+ ANNEALING; TRANSMISSION ELECTRON MICROSCOPY; RUTHERFORD
+ SCATTERING; XRAY DIFFRACTION; STRAINS; SOLIDPHASE
+ EPITAXY; AMORPHIZATION",
+ URL = "http://link.aip.org/link/?APL/63/2786/1",
+ doi = "10.1063/1.110334",
+}
+
@Article{strane94,
author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
Picraux and J. K. Watanabe and J. W. Mayer",
doi = "10.1557/PROC-354-171",
URL = "http://dx.doi.org/10.1557/PROC-354-171",
eprint = "http://journals.cambridge.org/article_S1946427400420853",
+ notes = "first time ibs at moderate temperatures",
+}
+
+@Article{lindner96,
+ title = "Formation of buried epitaxial silicon carbide layers
+ in silicon by ion beam synthesis",
+ journal = "Materials Chemistry and Physics",
+ volume = "46",
+ number = "2-3",
+ pages = "147--155",
+ year = "1996",
+ note = "",
+ ISSN = "0254-0584",
+ doi = "DOI: 10.1016/S0254-0584(97)80008-9",
+ URL = "http://www.sciencedirect.com/science/article/B6TX4-3VSGY9S-8/2/f001f23c0b3bc0fc3fc683616588fbc7",
+ author = "J. K. N. Lindner and K. Volz and U. Preckwinkel and B.
+ Götz and A. Frohnwieser and B. Rauschenbach and B.
+ Stritzker",
+ notes = "dose window",
+}
+
+@Article{calcagno96,
+ title = "Carbon clustering in Si[sub 1-x]{C}[sub x] formed by
+ ion implantation",
+ journal = "Nuclear Instruments and Methods in Physics Research
+ Section B: Beam Interactions with Materials and Atoms",
+ volume = "120",
+ number = "1-4",
+ pages = "121--124",
+ year = "1996",
+ note = "Proceedings of the E-MRS '96 Spring Meeting Symp. I on
+ New Trends in Ion Beam Processing of Materials",
+ ISSN = "0168-583X",
+ doi = "DOI: 10.1016/S0168-583X(96)00492-2",
+ URL = "http://www.sciencedirect.com/science/article/B6TJN-3VSHB0W-1S/2/164b9f4f972a02f44b341b0de28bba1d",
+ author = "L. Calcagno and G. Compagnini and G. Foti and M. G.
+ Grimaldi and P. Musumeci",
+ notes = "dose window, graphitic bonds",
+}
+
+@Article{lindner98,
+ title = "Mechanisms of Si{C} Formation in the Ion Beam
+ Synthesis of 3{C}-Si{C} Layers in Silicon",
+ journal = "Materials Science Forum",
+ volume = "264-268",
+ pages = "215--218",
+ year = "1998",
+ note = "",
+ doi = "10.4028/www.scientific.net/MSF.264-268.215",
+ URL = "http://www.scientific.net/MSF.264-268.215",
+ author = "J. K. N. Lindner and W. Reiber and B. Stritzker",
+ notes = "intermediate temperature for sharp interface + good
+ crystallinity",
}
@Article{lindner99,
notes = "solubility of c in c-si, si-c phase diagram",
}
+@Article{hofker74,
+ author = "W. Hofker and H. Werner and D. Oosthoek and N.
+ Koeman",
+ affiliation = "N. V. Philips' Gloeilampenfabrieken Philips Research
+ Laboratories Eindhoven Netherlands Eindhoven
+ Netherlands",
+ title = "Boron implantations in silicon: {A} comparison of
+ charge carrier and boron concentration profiles",
+ journal = "Applied Physics A: Materials Science \& Processing",
+ publisher = "Springer Berlin / Heidelberg",
+ ISSN = "0947-8396",
+ keyword = "Physics and Astronomy",
+ pages = "125--133",
+ volume = "4",
+ issue = "2",
+ URL = "http://dx.doi.org/10.1007/BF00884267",
+ note = "10.1007/BF00884267",
+ year = "1974",
+ notes = "first time ted (only for boron?)",
+}
+
+@Article{michel87,
+ author = "A. E. Michel and W. Rausch and P. A. Ronsheim and R.
+ H. Kastl",
+ collaboration = "",
+ title = "Rapid annealing and the anomalous diffusion of ion
+ implanted boron into silicon",
+ publisher = "AIP",
+ year = "1987",
+ journal = "Applied Physics Letters",
+ volume = "50",
+ number = "7",
+ pages = "416--418",
+ keywords = "SILICON; ION IMPLANTATION; ANNEALING; DIFFUSION;
+ BORON; ATOM TRANSPORT; CHARGEDPARTICLE TRANSPORT; VERY
+ HIGH TEMPERATURE; PN JUNCTIONS; SURFACE CONDUCTIVITY",
+ URL = "http://link.aip.org/link/?APL/50/416/1",
+ doi = "10.1063/1.98160",
+ notes = "ted of boron in si",
+}
+
+@Article{cowern90,
+ author = "N. E. B. Cowern and K. T. F. Janssen and H. F. F.
+ Jos",
+ collaboration = "",
+ title = "Transient diffusion of ion-implanted {B} in Si: Dose,
+ time, and matrix dependence of atomic and electrical
+ profiles",
+ publisher = "AIP",
+ year = "1990",
+ journal = "Journal of Applied Physics",
+ volume = "68",
+ number = "12",
+ pages = "6191--6198",
+ keywords = "BORON IONS; ION IMPLANTATION; SILICON; DIFFUSION; TIME
+ DEPENDENCE; ANNEALING; VERY HIGH TEMPERATURE; SIMS;
+ CRYSTALS; AMORPHIZATION",
+ URL = "http://link.aip.org/link/?JAP/68/6191/1",
+ doi = "10.1063/1.346910",
+ notes = "ted of boron in si",
+}
+
@Article{cowern96,
author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
F. W. Saris and W. Vandervorst",
quasi-direct one",
}
+@Conference{powell93,
+ author = "A. R. Powell and K. Eberl and F. E. LeGoues and B. A.
+ Ek and S. S. Iyer",
+ collaboration = "",
+ title = "Stability of strained Si[sub 1 - y]{C}[sub y] random
+ alloy layers",
+ publisher = "AVS",
+ year = "1993",
+ journal = "J. Vac. Sci. Technol. B",
+ volume = "11",
+ number = "3",
+ pages = "1064--1068",
+ location = "Ottawa (Canada)",
+ keywords = "SILICON ALLOYS; CARBON ALLOYS; STRAINS; THICKNESS;
+ METASTABLE PHASES; TWINNING; DISLOCATIONS; MOLECULAR
+ BEAM EPITAXY; EPITAXIAL LAYERS; CRITICAL PHENOMENA;
+ TEMPERATURE RANGE 400--1000 K; BINARY ALLOYS",
+ URL = "http://link.aip.org/link/?JVB/11/1064/1",
+ doi = "10.1116/1.587008",
+ notes = "substitutional c in si by mbe",
+}
+
@Article{osten99,
author = "H. J. Osten and J. Griesche and S. Scalese",
collaboration = "",
compounds",
URL = "http://link.aip.org/link/?APL/74/836/1",
doi = "10.1063/1.123384",
- notes = "substitutional c in si",
+ notes = "substitutional c in si by mbe",
}
@Article{hohenberg64,
si, dft",
}
+@Article{yagi02,
+ title = "Phosphorous Doping of Strain-Induced
+ Si$_{1-y}${C}$_{y}$ Epitaxial Films Grown\\
+ by Low-Temperature Chemical Vapor Deposition",
+ author = "Shuhei Yagi and Katsuya Abe and Takashi Okabayashi and
+ Yuichi Yoneyama and Akira Yamada and Makoto Konagai",
+ journal = "Japanese Journal of Applied Physics",
+ volume = "41",
+ number = "Part 1, No. 4B",
+ pages = "2472--2475",
+ numpages = "3",
+ year = "2002",
+ URL = "http://jjap.jsap.jp/link?JJAP/41/2472/",
+ doi = "10.1143/JJAP.41.2472",
+ publisher = "The Japan Society of Applied Physics",
+ notes = "experimental charge carrier mobility in strained si",
+}
+
@Article{chang05,
title = "Electron Transport Model for Strained Silicon-Carbon
Alloy",
URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
doi = "10.1143/JJAP.44.2257",
publisher = "The Japan Society of Applied Physics",
- notes = "enhance of electron mobility in starined si",
+ notes = "enhance of electron mobility in strained si",
}
@Article{osten97,
eprint = "http://journals.cambridge.org/article_S194642740054367X",
}
+@Article{newman61,
+ title = "The diffusivity of carbon in silicon",
+ journal = "Journal of Physics and Chemistry of Solids",
+ volume = "19",
+ number = "3-4",
+ pages = "230--234",
+ year = "1961",
+ note = "",
+ ISSN = "0022-3697",
+ doi = "DOI: 10.1016/0022-3697(61)90032-4",
+ URL = "http://www.sciencedirect.com/science/article/B6TXR-46M72R1-4D/2/9235472e4c0a95bf7b995769474f5fbd",
+ author = "R. C. Newman and J. Wakefield",
+ notes = "diffusivity of substitutional c in si",
+}
+
@Article{goesele85,
author = "U. Gösele",
title = "The Role of Carbon and Point Defects in Silicon",
URL = "http://link.aip.org/link/?JAP/77/2978/1",
doi = "10.1063/1.358714",
}
-
projects / lectures / latex.git / blobdiff