+ \item \flq100\frq{} C-Si dumbbell interstitial configuration is observed
+ to be the energetically most favorable configuration
+ \item For low C concentrations C atoms introduced as differently
+ oriented C-Si dumbbells in c-Si are properly arranged
+ for 3C-SiC formation
+ \item For high C concentrations an amorphous SiC-like phase is observed
+ which suggests higher temperature simulation runs for proper
+ 3C-SiC formation