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-{\color{red}\scriptsize Mismatch in thermal expansion coeefficient
- and lattice paramater}
-\vspace{-0.2cm}
+\vspace{-0.5cm}
+
+\begin{center}
+\color{red}
+\framebox{
+{\footnotesize\color{black}
+ Mismatch in \underline{thermal expansion coeefficient}
+ and \underline{lattice parameter} w.r.t. substrate
+}
+}
+\end{center}
+
+\vspace{0.1cm}
{\bf Alternative approach}\\
Ion beam synthesis (IBS) of burried 3C-SiC layers in Si\hkl(1 0 0)
}
\begin{minipage}{5.5cm}
\begin{center}
-{\small
+{\footnotesize
No surface bending effects\\
-$\Rightarrow$ Synthesis of large area SiC films possible
+High areal homogenity\\[0.1cm]
+$\Downarrow$\\[0.1cm]
+Synthesis of large area SiC films possible
}
\end{center}
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