sec checkin (starting sic prec sims now)

[lectures/latex.git] / posic / talks / defense.tex

diff --git a/posic/talks/defense.tex b/posic/talks/defense.tex
index c6cb981..b7150bd 100644 (file)
--- a/posic/talks/defense.tex
+++ b/posic/talks/defense.tex
@@ -248,6 +248,7 @@ E\\
 
 \begin{slide}
 
+\headphd
  {\large\bf
   Polytypes of SiC\\[0.6cm]
  }
@@ -285,19 +286,17 @@ Thermal conductivity [W/cmK] & 5.0 & 4.9 & 4.9 & 1.5 & 1.3 & 22 \\
 \end{tabular}
 
 \begin{pspicture}(0,0)(0,0)
-\psellipse[linecolor=green](5.7,2.10)(0.4,0.5)
+\psellipse[linecolor=green](5.7,2.05)(0.4,0.50)
 \end{pspicture}
 \begin{pspicture}(0,0)(0,0)
-\psellipse[linecolor=green](5.6,0.92)(0.4,0.2)
+\psellipse[linecolor=green](5.6,0.89)(0.4,0.20)
 \end{pspicture}
 \begin{pspicture}(0,0)(0,0)
-\psellipse[linecolor=red](10.45,0.45)(0.4,0.2)
+\psellipse[linecolor=red](10.45,0.42)(0.4,0.20)
 \end{pspicture}
 
 \end{slide}
 
-\fi
-
 % fabrication
 
 \begin{slide}
@@ -331,10 +330,20 @@ SiC thin films by MBE \& CVD
 \begin{picture}(0,0)(-310,-20)
   \includegraphics[width=2.0cm]{cree.eps}
 \end{picture}
-{\color{red}\scriptsize Mismatch in thermal expansion coeefficient
-                        and lattice paramater}
 
-\vspace{-0.2cm}
+\vspace{-0.5cm}
+
+\begin{center}
+\color{red}
+\framebox{
+{\footnotesize\color{black}
+ Mismatch in \underline{thermal expansion coeefficient}
+ and \underline{lattice parameter} w.r.t. substrate
+}
+}
+\end{center}
+
+\vspace{0.1cm}
 
 {\bf Alternative approach}\\
 Ion beam synthesis (IBS) of burried 3C-SiC layers in Si\hkl(1 0 0)
@@ -363,9 +372,11 @@ Ion beam synthesis (IBS) of burried 3C-SiC layers in Si\hkl(1 0 0)
 }
 \begin{minipage}{5.5cm}
 \begin{center}
-{\small
+{\footnotesize
 No surface bending effects\\
-$\Rightarrow$ Synthesis of large area SiC films possible
+High areal homogenity\\[0.1cm]
+$\Downarrow$\\[0.1cm]
+Synthesis of large area SiC films possible
 }
 \end{center}
 \end{minipage}
@@ -438,35 +449,10 @@ $\Rightarrow$ Synthesis of large area SiC films possible
 
 \end{slide}
 
-\end{document}
-% temp
-\ifnum1=0
-
 % contents
 
 \begin{slide}
 
-\headphd
-{\large\bf
- Outline
-}
-
- \begin{itemize}
-  \item Supposed precipitation mechanism of SiC in Si
-  \item Utilized simulation techniques
-        \begin{itemize}
-         \item Molecular dynamics (MD) simulations
-         \item Density functional theory (DFT) calculations
-        \end{itemize}
-  \item C and Si self-interstitial point defects in silicon
-  \item Silicon carbide precipitation simulations
-  \item Summary / Conclusion
- \end{itemize}
-
-\end{slide}
-
-\begin{slide}
-
 \headphd
 {\large\bf
   Supposed precipitation mechanism of SiC in Si
@@ -516,7 +502,7 @@ $\rho^*_{\text{Si}}=\unit[97]{\%}$
  \begin{minipage}{4.0cm}
  \begin{center}
  C-Si dimers (dumbbells)\\[-0.1cm]
- on Si interstitial sites
+ on Si lattice sites
  \end{center}
  \end{minipage}
  \hspace{0.1cm}
@@ -726,6 +712,33 @@ r = \unit[2--4]{nm}
 
 \begin{slide}
 
+\headphd
+{\large\bf
+ Outline
+}
+
+ \begin{itemize}
+  {\color{gray}
+  \item Introduction / Motivation
+  \item Assumed SiC precipitation mechanisms / Controversy
+  }
+  \item Utilized simulation techniques
+        \begin{itemize}
+         \item Molecular dynamics (MD) simulations
+         \item Density functional theory (DFT) calculations
+        \end{itemize}
+  \item Simulation results
+        \begin{itemize}
+         \item C and Si self-interstitial point defects in silicon
+         \item Silicon carbide precipitation simulations
+        \end{itemize}
+  \item Summary / Conclusion
+ \end{itemize}
+
+\end{slide}
+
+\begin{slide}
+
 \headphd
 {\large\bf
  Utilized computational methods
@@ -774,7 +787,7 @@ NpT (isothermal-isobaric) | Berendsen thermostat/barostat\\
 \hrule
 \begin{itemize}
 \item Code: \textsc{vasp}
-\item Plane wave basis set
+\item Plane wave basis set | $E_{\text{cut}}=\unit[300]{eV}$
 %$\displaystyle
 %\Phi_i=\sum_{|G+k|<G_{\text{cut}}} c_{i,k+G} \exp{\left(i(k+G)r\right)}
 %$\\
@@ -1691,6 +1704,9 @@ Contribution of entropy to structural formation\\[0.1cm]
 
 \end{slide}
 
+% temp
+\fi
+
 \begin{slide}
 
 \headphd
@@ -2130,9 +2146,6 @@ High T $\leftrightarrow$ IBS conditions far from equilibrium\\
 
 \end{slide}
 
-% skip high T / C conc ... only here!
-\ifnum1=0
-
 \begin{slide}
 
  {\large\bf
@@ -2199,13 +2212,11 @@ High C \& low T implants
 
 \end{slide}
 
-% skipped high T / C conc
-\fi
-
 \begin{slide}
 
+\headphd
 {\large\bf
- Summary / Outlook
+ Summary / Conclusions
 }
 
 \small
@@ -2270,6 +2281,11 @@ Investigation of structure \& structural evolution \ldots
   \item Ralf Utermann (EDV)
  \end{itemize}
  
+ \underline{Berlin/Brandenburg}
+ \begin{itemize}
+  \item PD Volker Eyert (Ref)
+ \end{itemize}
+ 
  \underline{Helsinki}
  \begin{itemize}
   \item Prof. K. Nordlund (MD)
@@ -2287,10 +2303,9 @@ Investigation of structure \& structural evolution \ldots
   \item Dr. E. Rauls (DFT + SiC)
  \end{itemize}
 
- \underline{Stuttgart}
 \begin{center}
 \framebox{
-\bf Thank you for your attention / invitation!
+\bf Thank you for your attention!
 }
 \end{center}
 
@@ -2298,4 +2313,3 @@ Investigation of structure \& structural evolution \ldots
 
 \end{document}
 
-\fi