started molecular dynamics chapter

[lectures/latex.git] / posic / thesis / defects.tex

diff --git a/posic/thesis/defects.tex b/posic/thesis/defects.tex
index e0ddc83..5465ef8 100644 (file)
--- a/posic/thesis/defects.tex
+++ b/posic/thesis/defects.tex
@@ -1133,3 +1133,16 @@ Low migration barriers are necessary to obtain this configuration and in contras
 Thus, carbon interstitials and vacancies located close together are assumed to end up in such a configuration in which the carbon atom is tetrahedrally coordinated and bound to four silicon atoms as expected in silicon carbide.
 In contrast to the above, this would suggest a silicon carbide precipitation by succesive creation of substitutional carbon instead of the agglomeration of C-Si dumbbell interstitials followed by an abrupt precipitation.
 
+{\color{red}Todo:
+C atoms in 100 DB tightend in 110 direction, which is important for stress compensation in some combined constellations.
+}
+{\color{red}Todo:
+Most of the combinations should only be thought of intermediate configurations, which need to be transformed in the later SiC precipitation process.
+}
+{\color{red}Todo:
+Better structure, better language, better methodology!
+}
+{\color{red}Todo:
+Fit of lennard-jones an other rep + attr potentials in 110 interaction data!
+}
+