sec checkin ... high T long t

[lectures/latex.git] / posic / thesis / defects.tex

diff --git a/posic/thesis/defects.tex b/posic/thesis/defects.tex
index 4164f87..774d5df 100644 (file)
--- a/posic/thesis/defects.tex
+++ b/posic/thesis/defects.tex
@@ -1321,7 +1321,7 @@ In the same way the energetically most unfavorable configuration can be explaine
 The substitutional C is located next to the lattice site shared by the \hkl<1 1 0> Si self-interstitial along the \hkl<1 -1 0> direction.
 Thus, the compressive stress along \hkl<1 1 0> of the Si \hkl<1 1 0> interstitial is not compensated but intensified by the tensile stress of the substitutional C atom, which is no longer loacted along the direction of stress.
 
-{\color{red}Todo: Mig of C-Si DB conf to or from C sub + Si 110 int conf.}
+{\color{red}Todo: Mig of C-Si DB conf to or from C sub + Si 110 in progress.}
 
 \section{Migration in systems of combined defects}
 
@@ -1397,6 +1397,7 @@ At a displacement of 60 \% these bonds are broken.
 Due to this and due to the formation of new bonds, that is the bond of silicon atom number 1 to silicon atom number 5 and the bond of the carbon atom to its siliocn neighbour in the bottom left, a less steep increase of free energy is observed.
 At a displacement of approximately 30 \% the bond of silicon atom number 1 to the just recently created siliocn atom is broken up again, which explains the repeated boost in energy.
 Finally the system gains energy relaxing into the configuration of zero displacement.
+{\color{red}Todo: Direct migration of C in progress.}
 
 Due to the low binding energy observed, the configuration of the vacancy created at position 3 is assumed to be stable against transition.
 However, a relatively simple migration path exists, which intuitively seems to be a low energy process.