% todo - sync with conclusion chapter
-These findings allow to draw conclusions on the mechanisms involved in the process of SiC conversion in Si.
+These findings allow to draw conclusions on the mechanisms involved in the process of SiC conversion in Si, which is elaborated in more detail within the comprehensive description in chapter~\ref{chapter:summary}.
Agglomeration of C$_{\text{i}}$ is energetically favored and enabled by a low activation energy for migration.
Although ion implantation is a process far from thermodynamic equilibrium, which might result in phases not described by the Si/C phase diagram, i.e. a C phase in Si, high activation energies are believed to be responsible for a low probability of the formation of C-C clusters.
On the other hand, the conversion of some region of Si into SiC by \cs{} is accompanied by a reduction of the volume since SiC exhibits a \unit[20]{\%} smaller lattice constant than Si.
The reduction in volume is compensated by excess Si$_{\text{i}}$ serving as building blocks for the surrounding Si host or a further formation of SiC.
-To conclude, precipitation occurs by successive agglomeration of C$_{\text{s}}$.
+To conclude, the available results suggest precipitation by successive agglomeration of C$_{\text{s}}$.
However, the agglomeration and rearrangement of C$_{\text{s}}$ is only possible by mobile C$_{\text{i}}$, which has to be present at the same time.
Accordingly, the process is governed by both, C$_{\text{s}}$ accompanied by Si$_{\text{i}}$ as well as C$_{\text{i}}$.
It is worth to mention that there is no contradiction to results of the HREM studies \cite{werner96,werner97,eichhorn99,lindner99_2,koegler03}.
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