Each SiC bilayer can be situated in one of three possible positions (abbreviated a, b or c) with respect to the lattice while maintaining the tetrahedral bonding scheme of the crystal.
\begin{figure}[t]
\begin{center}
-\includegraphics[width=10cm]{polytypes.eps}
+\includegraphics[height=5.5cm]{polytypes_own.eps}\\[0.1cm]
+\begin{minipage}{0.45\textwidth}
+{\small
+\hspace*{0.05cm} a \hspace*{0.09cm} b \hspace*{0.09cm} c \hspace*{0.44cm} a \hspace*{0.09cm} b \hspace*{0.44cm} a \hspace*{0.09cm} b \hspace*{0.09cm} c \hspace*{0.44cm} a \hspace*{0.09cm} b \hspace*{0.09cm} c \hspace*{0.09cm} a\\
+\hspace*{0.5cm} 3C \hspace*{0.9cm} 2H \hspace*{1.0cm} 4H \hspace*{1.3cm} 6H
+}
+\end{minipage}
+%\includegraphics[width=10cm]{polytypes.eps}
\end{center}
-\caption{Stacking sequence of SiC bilayers of the most common polytypes of SiC (from left to right): 3C, 2H, 4H and 6H.}
+\caption[Stacking sequence of SiC bilayers of the most common polytypes of SiC.]{Stacking sequence of SiC bilayers of the most common polytypes of SiC (from left to right): 3C, 2H, 4H and 6H.}
\label{fig:sic:polytypes}
\end{figure}
Fig.~\ref{fig:sic:polytypes} shows the stacking sequence of the most common and technologically most important SiC polytypes, which are the cubic (3C) and hexagonal (2H, 4H and 6H) polytypes.
+\bibpunct{}{}{,}{n}{}{}
\begin{table}[t]
\begin{center}
\begin{tabular}{l c c c c c c}
\hline
\end{tabular}
\end{center}
-\caption[Properties of SiC polytypes and other semiconductor materials.]{Properties of SiC polytypes and other semiconductor materials. Doping concentrations are $10^{16}\text{ cm}^{-3}$ (A) and $10^{17}\text{ cm}^{-3}$ (B) respectively. References: \cite{wesch96,casady96,park98}.}
+\caption[Properties of SiC polytypes and other semiconductor materials.]{Properties of SiC polytypes and other semiconductor materials. Doping concentrations are $10^{16}\text{ cm}^{-3}$ (A) and $10^{17}\text{ cm}^{-3}$ (B) respectively. References: \cite[]{wesch96,casady96,park98}.}
\label{table:sic:properties}
\end{table}
+\bibpunct{[}{]}{,}{n}{}{}
% todo add more refs + check all values!
Different polytypes of SiC exhibit different properties.
Some of the key properties are listed in Table~\ref{table:sic:properties} and compared to other technologically relevant semiconductor materials.
\begin{center}
\includegraphics[width=0.35\columnwidth]{sic_unit_cell.eps}
\end{center}
-\caption{3C-SiC unit cell. Yellow and grey spheres correpsond to Si and C atoms respectively. Covalent bonds are illustrated by blue lines.}
+\caption[3C-SiC unit cell.]{3C-SiC unit cell. Yellow and grey spheres correpsond to Si and C atoms respectively. Covalent bonds are illustrated by blue lines.}
\label{fig:sic:unit_cell}
\end{figure}
Its unit cell is shown in Fig.~\ref{fig:sic:unit_cell}.
\begin{center}
\includegraphics[width=0.6\columnwidth]{ibs_3c-sic.eps}
\end{center}
-\caption[Bright field (a) and \hkl(1 1 1) SiC dark field (b) cross-sectional TEM micrographs of the buried SiC layer in Si created by the two-temperature implantation technique and subsequent annealing.]{Bright field (a) and \hkl(1 1 1) SiC dark field (b) cross-sectional TEM micrographs of the buried SiC layer in Si created by the two-temperature implantation technique and subsequent annealing as explained in the text \cite{lindner99_2}. The inset shows a selected area diffraction pattern of the buried layer.}
+\caption[Bright field and \hkl(1 1 1) SiC dark field cross-sectional TEM micrographs of the buried SiC layer in Si created by the two-temperature implantation technique and subsequent annealing.]{Bright field (a) and \hkl(1 1 1) SiC dark field (b) cross-sectional TEM micrographs of the buried SiC layer in Si created by the two-temperature implantation technique and subsequent annealing as explained in the text \cite{lindner99_2}. The inset shows a selected area diffraction pattern of the buried layer.}
\label{fig:sic:hrem_sharp}
\end{figure}
\subfigure[]{\label{fig:sic:hrem:c-si}\includegraphics[width=0.25\columnwidth]{tem_c-si-db.eps}}
\subfigure[]{\label{fig:sic:hrem:sic}\includegraphics[width=0.25\columnwidth]{tem_3c-sic.eps}}
\end{center}
-\caption[High resolution transmission electron microscopy (HREM) micrographs of agglomerates of C-Si dimers showing dark contrasts and otherwise undisturbed Si lattice fringes (a) and equally sized Moir\'e patterns indicating 3C-SiC precipitates (b).]{High resolution transmission electron microscopy (HREM) micrographs \cite{lindner99_2} of agglomerates of C-Si dimers showing dark contrasts and otherwise undisturbed Si lattice fringes (a) and equally sized Moir\'e patterns indicating 3C-SiC precipitates (b).}
+\caption[High resolution transmission electron microscopy (HREM) micrographs of agglomerates of C-Si dimers showing dark contrasts and otherwise undisturbed Si lattice fringes and equally sized Moir\'e patterns indicating 3C-SiC precipitates.]{High resolution transmission electron microscopy (HREM) micrographs \cite{lindner99_2} of agglomerates of C-Si dimers showing dark contrasts and otherwise undisturbed Si lattice fringes (a) and equally sized Moir\'e patterns indicating 3C-SiC precipitates (b).}
\label{fig:sic:hrem}
\end{figure}
A topotactic transformation into a 3C-SiC precipitate occurs once a critical radius of \unit[2]{nm} to \unit[4]{nm} is reached.
% strane94/guedj98: my model - c redist by si int (spe) and surface diff (mbe)
% serre95: low/high t implants -> mobile c_i / non-mobile sic precipitates
-% todo - own polytype stacking sequence image
-
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