Fig.~

[lectures/latex.git] / posic / thesis / sic.tex

diff --git a/posic/thesis/sic.tex b/posic/thesis/sic.tex
index 5f90578..bdd9700 100644 (file)
--- a/posic/thesis/sic.tex
+++ b/posic/thesis/sic.tex
@@ -284,7 +284,7 @@ To further improve the interface quality and crystallinity a two-temperature imp
 To form a narrow, box-like density profile of oriented SiC nanocrystals, \unit[93]{\%} of the total dose of \unit[$8.5\cdot 10^{17}$]{cm$^{-2}$} is implanted at \unit[500]{$^{\circ}$C}.
 The remaining dose is implanted at \unit[250]{$^{\circ}$C}, which leads to the formation of amorphous zones above and below the SiC precipitate layer and the destruction of SiC nanocrystals within these zones.
 After annealing for \unit[10]{h} at \unit[1250]{$^{\circ}$C} a homogeneous, stoichiometric SiC layer with sharp interfaces is formed.
-Fig. \ref{fig:sic:hrem_sharp} shows the respective high resolution transmission electron microscopy micrographs.
+Fig.~\ref{fig:sic:hrem_sharp} shows the respective high resolution transmission electron microscopy micrographs.
 \begin{figure}[t]
 \begin{center}
 \includegraphics[width=0.6\columnwidth]{ibs_3c-sic.eps}