more small changes

[lectures/latex.git] / posic / thesis / summary_outlook.tex

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--- a/posic/thesis/summary_outlook.tex
+++ b/posic/thesis/summary_outlook.tex
@@ -1,8 +1,6 @@
 \chapter{Summary and conclusions}
 \label{chapter:summary}
 
-{\setlength{\parindent}{0pt} 
-%\paragraph{To summarize,}
 {\bf To summarize},
 in a short review of the C/Si compound and the fabrication of the technologically promising semiconductor SiC by IBS, two controversial assumptions of the precipitation mechanism of 3C-SiC in c-Si are elaborated.
 }
@@ -128,10 +126,7 @@ Entropic contributions are assumed to be responsible for these structures at ele
 Indeed, utilizing increased temperatures is assumed to constitute a necessary condition to simulate IBS of 3C-SiC in c-Si.
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 \\
-% todo - sync with respective conclusion chapter
-%
 % conclusions 2nd part
-%\paragraph{Conclusions}
 {\bf Conclusions}
 concerning the SiC conversion mechanism are derived from results of both, first-principles and classical potential calculations.
 Although classical potential MD calculations fail to directly simulate the precipitation of SiC, obtained results, on the one hand, reinforce previous findings of the first-principles investigations and, on the other hand, allow further conclusions on the SiC precipitation in Si.