started sic on sic

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index 83dedd2..3f22968 100644 (file)
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -1751,6 +1751,49 @@
   notes =        "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
 }
 
   notes =        "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
 }
 

+@Article{powell90_2,
+  author =       "J. A. Powell and D. J. Larkin and L. G. Matus and W.
+                 J. Choyke and J. L. Bradshaw and L. Henderson and M.
+                 Yoganathan and J. Yang and P. Pirouz",
+  collaboration = "",
+  title =        "Growth of high quality 6{H}-Si{C} epitaxial films on
+                 vicinal (0001) 6{H}-Si{C} wafers",
+  publisher =    "AIP",
+  year =         "1990",
+  journal =      "Applied Physics Letters",
+  volume =       "56",
+  number =       "15",
+  pages =        "1442--1444",
+  keywords =     "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
+                 PROPERTIES; WAFERS; CARRIER DENSITY; CARRIER MOBILITY;
+                 TRANSMISSION ELECTRON MICROSCOPY; CRYSTAL DEFECTS;
+                 DISLOCATIONS; PHOTOLUMINESCENCE; VAPOR PHASE EPITAXY",
+  URL =          "http://link.aip.org/link/?APL/56/1442/1",
+  doi =          "10.1063/1.102492",
+  notes =        "cvd of 6h-sic on 6h-sic",
+}
+
+@Article{kong88_2,
+  author =       "H. S. Kong and J. T. Glass and R. F. Davis",
+  collaboration = "",
+  title =        "Chemical vapor deposition and characterization of
+                 6{H}-Si{C} thin films on off-axis 6{H}-Si{C}
+                 substrates",
+  publisher =    "AIP",
+  year =         "1988",
+  journal =      "Journal of Applied Physics",
+  volume =       "64",
+  number =       "5",
+  pages =        "2672--2679",
+  keywords =     "THIN FILMS; CHEMICAL VAPOR DEPOSITION; VAPOR DEPOSITED
+                 COATINGS; SILICON CARBIDES; TRANSMISSION ELECTRON
+                 MICROSCOPY; MONOCRYSTALS; MORPHOLOGY; CRYSTAL
+                 STRUCTURE; CRYSTAL DEFECTS; CARRIER DENSITY; VAPOR
+                 PHASE EPITAXY; CRYSTAL ORIENTATION",
+  URL =          "http://link.aip.org/link/?JAP/64/2672/1",
+  doi =          "10.1063/1.341608",
+}
+

 @Article{powell90,
   author =       "J. A. Powell and D. J. Larkin and L. G. Matus and W.
                  J. Choyke and J. L. Bradshaw and L. Henderson and M.
 @Article{powell90,
   author =       "J. A. Powell and D. J. Larkin and L. G. Matus and W.
                  J. Choyke and J. L. Bradshaw and L. Henderson and M.


@@ -1773,6 +1816,48 @@
   notes =        "cvd of 3c-sic on 6h-sic",
 }
 
   notes =        "cvd of 3c-sic on 6h-sic",
 }
 

+@Article{kong88,
+  author =       "H. S. Kong and B. L. Jiang and J. T. Glass and G. A.
+                 Rozgonyi and K. L. More",
+  collaboration = "",
+  title =        "An examination of double positioning boundaries and
+                 interface misfit in beta-Si{C} films on alpha-Si{C}
+                 substrates",
+  publisher =    "AIP",
+  year =         "1988",
+  journal =      "Journal of Applied Physics",
+  volume =       "63",
+  number =       "8",
+  pages =        "2645--2650",
+  keywords =     "SILICON CARBIDES; INTERFACES; SILICON; STACKING
+                 FAULTS; TRANSMISSION ELECTRON MICROSCOPY; EPITAXY; THIN
+                 FILMS; OPTICAL MICROSCOPY; TOPOGRAPHY; NUCLEATION;
+                 MORPHOLOGY; ROTATION; SURFACE STRUCTURE; INTERFACE
+                 STRUCTURE; XRAY TOPOGRAPHY; EPITAXIAL LAYERS",
+  URL =          "http://link.aip.org/link/?JAP/63/2645/1",
+  doi =          "10.1063/1.341004",
+}
+
+@Article{powell91,
+  author =       "J. A. Powell and J. B. Petit and J. H. Edgar and I. G.
+                 Jenkins and L. G. Matus and J. W. Yang and P. Pirouz
+                 and W. J. Choyke and L. Clemen and M. Yoganathan",
+  collaboration = "",
+  title =        "Controlled growth of 3{C}-Si{C} and 6{H}-Si{C} films
+                 on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers",
+  publisher =    "AIP",
+  year =         "1991",
+  journal =      "Applied Physics Letters",
+  volume =       "59",
+  number =       "3",
+  pages =        "333--335",
+  keywords =     "SILICON CARBIDES; SURFACE TREATMENTS; SORPTIVE
+                 PROPERTIES; CHEMICAL VAPOR DEPOSITION; MATHEMATICAL
+                 MODELS; CRYSTAL STRUCTURE; VERY HIGH TEMPERATURE",
+  URL =          "http://link.aip.org/link/?APL/59/333/1",
+  doi =          "10.1063/1.105587",
+}
+

 @Article{yuan95,
   author =       "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
                  Thokala and M. J. Loboda",
 @Article{yuan95,
   author =       "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
                  Thokala and M. J. Loboda",

diff --git a/posic/thesis/sic.tex b/posic/thesis/sic.tex
index ee9f2c8..abcdd3e 100644 (file)
--- a/posic/thesis/sic.tex
+++ b/posic/thesis/sic.tex
@@ -173,9 +173,17 @@ However, the number of such defects can be reduced by off-axis growth on a Si \h
 This results in the thermodynamically favored growth of a single phase due to the uni-directional contraction of Si-C-Si bond chains perpendicular to the terrace steps edges during carbonization and the fast growth parallel to the terrace edges during growth under Si rich conditions \cite{kitabatake97}.
 By MBE, lower process temperatures than these typically employed in CVD have been realized \cite{hatayama95,henke95,fuyuki97,takaoka98}, which is essential for limiting thermal stresses and to avoid resulting substrate bending, a key issue in obtaining large area 3C-SiC surfaces.
 In summary, the almost universal use of Si has allowed significant progress in the understanding of heteroepitaxial growth of SiC on Si.
 This results in the thermodynamically favored growth of a single phase due to the uni-directional contraction of Si-C-Si bond chains perpendicular to the terrace steps edges during carbonization and the fast growth parallel to the terrace edges during growth under Si rich conditions \cite{kitabatake97}.
 By MBE, lower process temperatures than these typically employed in CVD have been realized \cite{hatayama95,henke95,fuyuki97,takaoka98}, which is essential for limiting thermal stresses and to avoid resulting substrate bending, a key issue in obtaining large area 3C-SiC surfaces.
 In summary, the almost universal use of Si has allowed significant progress in the understanding of heteroepitaxial growth of SiC on Si.

-However, mismatches in the thermal expansion coefficient and the lattice parameter cause a considerably high concentration of various defects, which is responsible for structural and electrical qualities that are not not yet statisfactory.
+However, mismatches in the thermal expansion coefficient and the lattice parameter cause a considerably high concentration of various defects, which is responsible for structural and electrical qualities that are not yet statisfactory.
+
+The alternative attempt to grow SiC on SiC substrates has shown to drastically reduce the concentration of defects in deposited layers.
+By CVD, both, the 3C \cite{kong88,powell90,powell91} as well as the 6H \cite{kong88_2,powell90_2} polytype could be successfully grown.
+In order to obtain the homoepitactically grown 6H polytype, off-axis 6H-SiC wafers are required as a substrate \cite{kimoto93}.
+%In the so called step-controlled epitaxy, lateral growth proceeds from atomic steps without the necessity of preceding nucleation events.
+Investigations indicate that in so-called step-controlled epitaxy, crystal growth proceeds through the adsorbtion of Si species at atomic steps and their carbonization by hydrocarbon molecules.
+A model is suggested ...
+
+... diffusion of reactants in a stagnant layer.

 
 

-SiC on SiC epitaxy ...

 
 \section{Ion beam synthesis of cubic silicon carbide}
 
 
 \section{Ion beam synthesis of cubic silicon carbide}