-Since the investigated temperatures exceed the Si melting point the initial Si bulk material is heated up slowly by $1\,^{\circ}\mathrm{C}/\text{ps}$ starting from $1650\,^{\circ}\mathrm{C}$.
+Since the investigated temperatures exceed the Si melting point the initial Si bulk material is heated up slowly by $1\,^{\circ}\mathrm{C}/\text{ps}$ starting from $1650\,^{\circ}\mathrm{C}$ before the C insertion sequence is started.
+
+\begin{figure}[!ht]
+\begin{center}
+\includegraphics[width=12cm]{fe_100.ps}
+\includegraphics[width=12cm]{q_100.ps}
+\end{center}
+\caption[Evolution of the free energy and quality of a simulation at 100 \% of the Si melting temperature.]{Evolution of the free energy and quality of a simulation at 100 \% of the Si melting temperature. Matt colored parts of the graphs represent the C insertion sequence.}
+\label{fig:md:exceed100}
+\end{figure}
+\begin{figure}[!ht]
+\begin{center}
+\includegraphics[width=12cm]{fe_120.ps}
+\includegraphics[width=12cm]{q_120.ps}
+\end{center}
+\caption[Evolution of the free energy and quality of a simulation at 120 \% of the Si melting temperature.]{Evolution of the free energy and quality of a simulation at 120 \% of the Si melting temperature. Matt colored parts of the graphs represent the C insertion sequence.}
+\label{fig:md:exceed120}
+\end{figure}
+Figure \ref{fig:md:exceed100} and \ref{fig:md:exceed120} show the evolution of the free energy per atom and the quality at 100 \% and 120 \% of the Si melting temperature.
+
+