+\begin{figure}[th!]
+\begin{center}
+\includegraphics[width=13cm]{vasp_mig/110_mig_vasp.ps}
+%\begin{picture}(0,0)(140,0)
+%\includegraphics[width=2.2cm]{vasp_mig/00-1_b.eps}
+%\end{picture}
+%\begin{picture}(0,0)(20,0)
+%\includegraphics[width=2.2cm]{vasp_mig/00-1_ip0-10_sp.eps}
+%\end{picture}
+%\begin{picture}(0,0)(-120,0)
+%\includegraphics[width=2.2cm]{vasp_mig/0-10_b.eps}
+%\end{picture}
+\end{center}
+\caption{Migration barriers of the \hkl<1 1 0> dumbbell to bond-centered (red), \hkl<0 0 -1> (green) and \hkl<0 -1 0> (in place, blue) C-Si dumbbell transition.}
+\label{fig:defects:110_mig_vasp}
+\end{figure}
+Further migration pathways in particular those occupying other defect configurations than the \hkl<1 0 0>-type either as a transition state or a final or starting configuration are totally conceivable.
+In order to find possible migration pathways that have an activation energy lower than the ones found up to now.
+The next energetically favorable defect configuration is the \hkl<1 1 0> C-Si dumbbell interstitial.
+Figure \ref{fig:defects:110_mig_vasp} shows the migration barrier of the \hkl<1 1 0> C-Si dumbbell to the bond-centered, \hkl<0 0 -1> and \hkl<0 -1 0> (in place) transition.
+Indeed less than 0.7 eV are necessary to turn a \hkl<0 -1 0>- to a \hkl<1 1 0>-type C-Si dumbbell interstitial.
+This transition is carried out in place, that is the Si dumbbell pair is not changed and both, the Si and C atom share the same lattice site.
+Thus, this transition does not contribute to long-range diffusion.
+Once the C atom resides in the \hkl<1 1 0> interstitial configuration it can migrate into the bond-centered configuration by employing approximately 0.95 eV of activation energy, which is only slightly higher than the activation energy needed for the \hkl<0 0 -1> to \hkl<0 -1 0> pathway shown in figure \ref{fig:defects:00-1_0-10_mig}.
+As already known from the migration of the \hkl<0 0 -1> to the bond-centered configuration as discussed in figure \ref{fig:defects:00-1_001_mig} another 0.25 eV are needed to turn back from the bond-centered to a \hkl<1 0 0>-type interstitial.
+However, due to the fact that this migration consists of three single transitions with the second one having an activation energy slightly higher than observed for the direct transition it is considered very unlikely to occur.
+The migration barrier of the \hkl<1 1 0> to \hkl<0 0 -1> transition, in which the C atom is changing its Si partner and, thus, moving to the neighboured lattice site is approximately 1.35 eV.
+During this transition the C atom is escaping the \hkl(1 1 0) plane approaching the final configuration on a curved path.
+This barrier is much higher than the ones found previously, which again make this transition very unlikely to occur.
+For this reason the assumption that C diffusion and reorientation is achieved by transitions of the type presented in figure \ref{fig:defects:00-1_0-10_mig} is reinforced.
+