sic chapter done

diff --git a/posic/thesis/sic.tex b/posic/thesis/sic.tex
index 808734f..f66107d 100644 (file)
--- a/posic/thesis/sic.tex
+++ b/posic/thesis/sic.tex
@@ -434,7 +434,7 @@ The resulting strain due to the slightly lower Si density of SiC compared to Si
 However, the exact atomic rearrangement involved within this topotactic transformation is not identified.
 Furthermore, IBS studies of Reeson~et~al.~\cite{reeson87}, in which implantation temperatures of \unit[500]{$^{\circ}$C} were employed, revealed the necessity of extreme annealing temperatures for C redistribution, which is assumed to result from the stability of substitutional C and consequently high activation energies required for precipitate dissolution.
 The results support a mechanism of an initial coherent precipitation based on substitutional C that is likewise valid for the IBS of 3C-SiC by C implantation into Si at elevated temperatures.
-The fact that the metastable cubic phase instead of the thermodynamically more favorable hexagonal $\alpha$-SiC structure is formed and the alignment of these cubic precipitates within the Si matrix, which can be explained by considering a topotactic transformation by C atoms occupying substitutionally Si lattice sites of one of the two fcc lattices that make up the Si crystal, reinforce the proposed mechanism.
+The fact that the metastable cubic phase instead of the thermodynamically more favorable hexagonal $\alpha$-SiC structure is formed and the alignment of these cubic precipitates within the Si matrix, which can be explained straightforward by considering a topotactic transformation by C atoms occupying substitutionally Si lattice sites of one of the two fcc lattices that make up the Si crystal, reinforce the proposed mechanism.
 
 To conclude, a controversy with respect to the precipitation of SiC in Si exists in literature.
 Next to the pure scientific interest, solving this controversy and gaining new insight in the SiC conversion mechanism might enable significant progress in the heteroepitaxial growth of thin films featuring non-coherent interfaces in the C/Si system.