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-{\color{blue}
-Thus, applying longer time scales in order to enable the system to undergo diffusion events, which become very unlikely to happen due to the overestimated bond strengthes, and in the end observe the agglomeration and precipitation might not be sufficient.
-On the other hand longer time scales are not accessible to simulation due to limited computational ressources.
-Alternatively the approach of using higher temperatures to speed up or actually make possible the steps involved in the precipitation mechanism is applied.
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-TAD, correcting time and undo changes for real temperature.
-Since the shot cut-off in the used potential introduces unphysical high forces use of higher temperatures in order to get the system to escape local minima and transform into the crystalline phase is the first approach followed.
-Anyways there is now conflict to experiments applying higher temepratures without the TAD corrections, since crystalline 3C-SiC is also expected for higher temperatures on the one hand and on the other hand the exact temperature inside the implantation volume is definetly higher than the temperature meassured at the surface of the sample.
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+Thus, pushing the time scale to the limits of computational ressources or applying one of the above mentioned accelerated dynamics methods exclusively will not be sufficient enough.
+
+Instead the first approach followed in this study, is the use of higher temperatures as exploited in TAD to find transition pathways of one local energy minimum to another one more quickly.
+Since merely increasing the temperature leads to different equilibrium kinetics than valid at low temperatures, TAD introduces basin-constrained MD allowing only those transitions that should occur at the original temperature and a properly advancing system clock \cite{sorensen2000}.
+The TAD corrections are not applied in coming up simulations.
+This is justified by two reasons.
+First of all a compensation of the overestimated bond strengthes due to the short range potential is expected.
+Secondly there is no conflict applying higher temperatures without the TAD corrections, since crystalline 3C-SiC is also observed for higher temperatures than $450\,^{\circ}\mathrm{C}$ in IBS \cite{lindner01}.
+It is therefore expected that the kinetics affecting the 3C-SiC precipitation are not much different at higher temperatures aside from the fact that it is occuring much more faster.
+Moreover, the interest of this study is focused on structural evolution of a system far from equilibrium instead of equilibrium properties which rely upon proper phase space sampling.
+On the other hand, during implantation, the actual temperature inside the implantation volume is definetly higher than the experimentally determined temperature tapped from the surface of the sample.