removed posic_seminar file

diff --git a/posic/talks/posic_seminar.tex b/posic/talks/posic_seminar.tex
deleted file mode 100644 (file)
index dab7c93..0000000
--- a/posic/talks/posic_seminar.tex
+++ /dev/null
@@ -1,134 +0,0 @@
-\documentclass{beamer}
-
-\mode<presentation>
-{
-%\usetheme{Berkeley}
-\usetheme{Warsaw}
-%\usetheme{Singapore}
-\setbeamercovered{transparent}
-}
-\usepackage{verbatim}
-\usepackage[german]{babel}
-\usepackage[latin1]{inputenc}
-\usepackage[T1]{fontenc}
-\usepackage{amsmath}
-\usepackage{ae}
-\usepackage{aecompl}
-\usepackage{colortbl}
-\usepackage{pgf,pgfarrows,pgfnodes,pgfautomata,pgfheaps,pgfshade}
-%\usepackage{pstricks}
-\usepackage{graphicx}
-\graphicspath{{../img}}
-\usepackage{hyperref}
-
-\begin{document}
-
-\title{the molecular dynamic simulation {\em posic}}
-\subtitle{atomistic simulation of the precipitation process of silicon carbide in carbon doped silicon}
-\author[F. Zirkelbach]{Frank Zirkelbach \\ \texttt{frank.zirkelbach@physik.uni-augsburg.de}}
-\institute{
-experimental physics IV\\
-university of augsburg
-}
-\date{june 2006}
-
-\AtBeginSection[]
-{
-  \begin{frame}<beamer>
-    \frametitle{agenda}
-    \tableofcontents[currentsection]
-  \end{frame}
-}
-
-\begin{frame}
-  \titlepage
-\end{frame}
-
-\begin{frame}
-  \frametitle{agenda}
-  \tableofcontents%[pausesections]
-\end{frame}
-
-\section{introduction}
-
-  \subsection{as things are now}
-
-\begin{frame}
-  \frametitle{introduction}
-  \framesubtitle{as things are now}
-  \begin{block}{precipitation process of $SiC$ in silicon}
-    \begin{itemize}
-      \item first steps:\\
-            (investigated by high resolution electron microscopy)
-            \begin{itemize}
-              \item formation of $C-Si$-dumbbells on regular $c-Si$ lattice
-                   sites
-             \item agglomeration into large clusters (embryos)
-            \end{itemize}
-      \item second step:\\
-            (not accessible by experiment)
-            \begin{itemize}
-             \item cluster size reaches a radius of $2-4 \, nm$
-             \item high interfacial energy due to the $SiC/Si$ lattice
-                   mismatch (~$20 \, \%$) is overcome
-             \item precipitation process of $SiC$
-            \end{itemize}
-    \end{itemize}
-  \end{block}
-\end{frame}
-
-  \subsection{motivation}
-
-\begin{frame}
-  \frametitle{introduction}
-  \framesubtitle{motivation}
-  \begin{block}{why studying the $SiC$ nucleation process}
-  \begin{itemize}
-    \item basic research
-    \item understanding the 2 steps of the precipitation process\\
-          $\Rightarrow$ facilitation of the $SiC$ heteroepitaxy on $c-Si$\\
-         $\Rightarrow$ suppress nucleation of $SiC$ in certain applications
-    \item $SiC$: most rapidly developed wide band gap semiconductor suitable
-          in high temperature, high frequency and high power applications
-  \end{itemize}
-  \end{block}
-\end{frame}
-
-\begin{frame}
-  \frametitle{introduction}
-  \framesubtitle{motivation}
-  \begin{block}{why doing an atomistic simulation}
-  \begin{itemize}
-    \item precipitation process is not understood for the most part
-    \item monitor the atomic structures in early stages of the embryo formation
-    \item atomic rearrangement in the most critical second step\\
-          (which is experimentally not accessible)
-    \item information about the atomic structure and interface of the
-          $SiC$ precipitates and the crystalline silicon\\
-         (including stress fields)
-  \end{itemize}
-  \end{block}
-\end{frame}
-
-\section{experimental observations}
-
-\section{simulation}
-
-  \subsection{introduction to atomistic simulations}
-
-\begin{frame}
-  \frametitle{simulation}
-  \framesubtitle{introduction to atomistic simulations}
-
-\end{frame}
-
-  \subsection{computational methods}
-
-  \subsection{the {\em posic} simulation}
-
-\section{results}
-
-\section{summary \& outlook}
-
-\end{document}
-