Peaks that already exist for the low temperature simulations get slightly more distinct for elevated temperatures.
This is also true for peaks located past distances of next neighbours indicating an increase for the long range order.
However this change is rather small and no significant structural change is observeable.
-As for low temperatures order in the short range exist decreasing with increasing distance.
+Due to the continuity of high amounts of damage investigations of atomic configurations below remain hard to identify even for the highest temperature.
+Other than in the low concentration simulations analyzed defect structures are no longer necessarily aligned to the primarily existing but succesively disappearing c-Si host matrix inhibiting or at least hampering their identification and classification.
+As for low temperatures order in the short range exists decreasing with increasing distance.
The increase of the amount of Si-C pairs at 0.186 nm could pe positively interpreted since this type of bond also exists in 3C-SiC.
On the other hand the amount of next neighboured C atoms with a distance of approximately 0.15 nm, which is the distance of C in graphite or diamond, is likewise increased.
Thus, higher temperatures seem to additionally enhance a conflictive process, that is the formation of C agglomerates, instead of the desired process of 3C-SiC formation.
This is supported by the C-C peak at 0.252 nm, which corresponds to the second next neighbour distance in the diamond structure of elemental C.
Investigating the atomic data indeed reveals two C atoms which are bound to and interconnect by a third C atom to be responsible for this distance.
-The C-C peak at about 0.31 nm, wich is slightly shifted to higher distances (0.317 nm) with increasing temperature corresponds quite well to the next neighbour distance of C in 3C-SiC as well as a-SiC and indeed results from C-Si-C bonds.
+The C-C peak at about 0.31 nm, wich is slightly shifted to higher distances (0.317 nm) with increasing temperature still corresponds quite well to the next neighbour distance of C in 3C-SiC as well as a-SiC and indeed results from C-Si-C bonds.
The Si-C peak at 0.282 nm, which is pronounced with increasing temperature is constructed out of a Si atom and a C atom, which are both bound to another central C atom.
+This is similar for the Si-C peak at approximately 0.35 nm.
+In this case, the Si and the C atom are bound to a central Si atom.
+
+Regarding these findings there is clear evidence ...
This said, there is clear evidence that this is amorphous SiC
However there is no significant change in structure.
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