These potentials are assumed to be reliable for large-scale simulations\cite{balamane92,huang95,godet03} on specific problems under investigation providing insight into phenomena that are otherwise not accessible by experimental or first-principles methods.
Until recently\cite{lucas10}, a parametrization to describe the C-Si multicomponent system within the mentioned interaction models did only exist for the Tersoff\cite{tersoff_m} and related potentials, e.g. the one by Gao and Weber\cite{gao02} as well as the one by Erhart and Albe\cite{albe_sic_pot}.
All these potentials are short range potentials employing a cut-off function, which drops the atomic interaction to zero in between the first and second next neighbor distance.
These potentials are assumed to be reliable for large-scale simulations\cite{balamane92,huang95,godet03} on specific problems under investigation providing insight into phenomena that are otherwise not accessible by experimental or first-principles methods.
Until recently\cite{lucas10}, a parametrization to describe the C-Si multicomponent system within the mentioned interaction models did only exist for the Tersoff\cite{tersoff_m} and related potentials, e.g. the one by Gao and Weber\cite{gao02} as well as the one by Erhart and Albe\cite{albe_sic_pot}.
All these potentials are short range potentials employing a cut-off function, which drops the atomic interaction to zero in between the first and second next neighbor distance.