new bib entries (ted, c in si)

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index 9b13f7e..81d9a5e 100644 (file)
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -40,6 +40,16 @@
   notes =        "derivation of albe bond order formalism",
 }
 
   notes =        "derivation of albe bond order formalism",
 }
 

+@Article{bean71,
+  author =       "A. R. Bean and R. C. Newman",
+  title =        "",
+  journal =      "J. Phys. Chem. Solids",
+  volume =       "32",
+  pages =        "1211",
+  year =         "1971",
+  notes =        "experimental solubility data of carbon in silicon",
+}
+

 @Article{capano97,
   author =       "M. A. Capano and R. J. Trew",
   title =        "Silicon Carbide Electronic Materials and Devices",
 @Article{capano97,
   author =       "M. A. Capano and R. J. Trew",
   title =        "Silicon Carbide Electronic Materials and Devices",


@@ -390,7 +400,8 @@
   month =        sep,
   doi =          "10.1103/PhysRevLett.83.2351",
   publisher =    "American Physical Society",
   month =        sep,
   doi =          "10.1103/PhysRevLett.83.2351",
   publisher =    "American Physical Society",

-  notes =        "nice images of the defects, si defect overview + refs",
+  notes =        "nice images of the defects, si defect overview +
+                 refs",

 }
 
 @Article{capaz94,
 }
 
 @Article{capaz94,


@@ -411,18 +422,20 @@
 }
 
 @Article{dal_pino93,
 }
 
 @Article{dal_pino93,

-  title = {Ab initio investigation of carbon-related defects in silicon},
-  author = {Dal Pino, A.  and Rappe, Andrew M. and Joannopoulos, J. D.},
-  journal = {Phys. Rev. B},
-  volume = {47},
-  number = {19},
-  pages = {12554--12557},
-  numpages = {3},
-  year = {1993},
-  month = {May},
-  doi = {10.1103/PhysRevB.47.12554},
-  publisher = {American Physical Society},
-  notes = {c interstitials in crystalline silicon}
+  title =        "Ab initio investigation of carbon-related defects in
+                 silicon",
+  author =       "A. Dal Pino and Andrew M. Rappe and J. D.
+                 Joannopoulos",
+  journal =      "Phys. Rev. B",
+  volume =       "47",
+  number =       "19",
+  pages =        "12554--12557",
+  numpages =     "3",
+  year =         "1993",
+  month =        may,
+  doi =          "10.1103/PhysRevB.47.12554",
+  publisher =    "American Physical Society",
+  notes =        "c interstitials in crystalline silicon",

 }
 
 @Article{car84,
 }
 
 @Article{car84,


@@ -476,6 +489,21 @@
   notes =        "mc md, strain compensation in si ge by c insertion",
 }
 
   notes =        "mc md, strain compensation in si ge by c insertion",
 }
 

+@Article{bean70,
+  title =        "Low temperature electron irradiation of silicon
+                 containing carbon",
+  journal =      "Solid State Communications",
+  volume =       "8",
+  number =       "3",
+  pages =        "175--177",
+  year =         "1970",
+  note =         "",
+  ISSN =         "0038-1098",
+  doi =          "DOI: 10.1016/0038-1098(70)90074-8",
+  URL =          "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
+  author =       "A. R. Bean and R. C. Newman",
+}
+

 @Article{watkins76,
   title =        "{EPR} Observation of the Isolated Interstitial Carbon
                  Atom in Silicon",
 @Article{watkins76,
   title =        "{EPR} Observation of the Isolated Interstitial Carbon
                  Atom in Silicon",


@@ -506,6 +534,21 @@
   month =        sep,
   doi =          "10.1103/PhysRevB.42.5759",
   publisher =    "American Physical Society",
   month =        sep,
   doi =          "10.1103/PhysRevB.42.5759",
   publisher =    "American Physical Society",

+  notes =        "carbon diffusion in silicon",
+}
+
+@Article{tipping87,
+  author =       "A K Tipping and R C Newman",
+  title =        "The diffusion coefficient of interstitial carbon in
+                 silicon",
+  journal =      "Semiconductor Science and Technology",
+  volume =       "2",
+  number =       "5",
+  pages =        "315--317",
+  URL =          "http://stacks.iop.org/0268-1242/2/315",
+  year =         "1987",
+  notes =        "diffusion coefficient of carbon interstitials in
+                 silicon",

 }
 
 @Article{strane96,
 }
 
 @Article{strane96,


@@ -805,17 +848,17 @@
 }
 
 @Article{tersoff90,
 }
 
 @Article{tersoff90,

-  title = {Carbon defects and defect reactions in silicon},
-  author = {Tersoff, J. },
-  journal = {Phys. Rev. Lett.},
-  volume = {64},
-  number = {15},
-  pages = {1757--1760},
-  numpages = {3},
-  year = {1990},
-  month = {Apr},
-  doi = {10.1103/PhysRevLett.64.1757},
-  publisher = {American Physical Society}
+  title =        "Carbon defects and defect reactions in silicon",
+  author =       "J. Tersoff",
+  journal =      "Phys. Rev. Lett.",
+  volume =       "64",
+  number =       "15",
+  pages =        "1757--1760",
+  numpages =     "3",
+  year =         "1990",
+  month =        apr,
+  doi =          "10.1103/PhysRevLett.64.1757",
+  publisher =    "American Physical Society",

 }
 
 @Article{fahey89,
 }
 
 @Article{fahey89,


@@ -1129,6 +1172,25 @@
                  and J. M. Poate",
 }
 
                  and J. M. Poate",
 }
 

+@Article{stolk97,
+  author =       "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
+                 D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
+                 M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
+                 E. Haynes",
+  collaboration = "",
+  title =        "Physical mechanisms of transient enhanced dopant
+                 diffusion in ion-implanted silicon",
+  publisher =    "AIP",
+  year =         "1997",
+  journal =      "Journal of Applied Physics",
+  volume =       "81",
+  number =       "9",
+  pages =        "6031--6050",
+  URL =          "http://link.aip.org/link/?JAP/81/6031/1",
+  doi =          "10.1063/1.364452",
+  notes =        "ted, transient enhanced diffusion, c silicon trap"
+}
+

 @Article{powell94,
   author =       "A. R. Powell and F. K. LeGoues and S. S. Iyer",
   collaboration = "",
 @Article{powell94,
   author =       "A. R. Powell and F. K. LeGoues and S. S. Iyer",
   collaboration = "",


@@ -1302,7 +1364,7 @@
   notes =        "simulation using promising tersoff reparametrization",
 }
 
   notes =        "simulation using promising tersoff reparametrization",
 }
 

-@Article{PhysRevB.52.15150,
+@Article{tang95,

   title =        "Atomistic simulation of thermomechanical properties of
                  \beta{}-Si{C}",
   author =       "Meijie Tang and Sidney Yip",
   title =        "Atomistic simulation of thermomechanical properties of
                  \beta{}-Si{C}",
   author =       "Meijie Tang and Sidney Yip",


@@ -1317,3 +1379,43 @@
   publisher =    "American Physical Society",
   notes =        "promising tersoff reparametrization",
 }
   publisher =    "American Physical Society",
   notes =        "promising tersoff reparametrization",
 }

+
+@Article{barkema96,
+  title =        "Event-Based Relaxation of Continuous Disordered
+                 Systems",
+  author =       "G. T. Barkema and Normand Mousseau",
+  journal =      "Phys. Rev. Lett.",
+  volume =       "77",
+  number =       "21",
+  pages =        "4358--4361",
+  numpages =     "3",
+  year =         "1996",
+  month =        nov,
+  doi =          "10.1103/PhysRevLett.77.4358",
+  publisher =    "American Physical Society",
+  notes =        "activation relaxation technique, art, speed up slow
+                 dynamic mds",
+}
+
+@Article{cances09,
+  author =       "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
+                 Minoukadeh and F. Willaime",
+  collaboration = "",
+  title =        "Some improvements of the activation-relaxation
+                 technique method for finding transition pathways on
+                 potential energy surfaces",
+  publisher =    "AIP",
+  year =         "2009",
+  journal =      "The Journal of Chemical Physics",
+  volume =       "130",
+  number =       "11",
+  eid =          "114711",
+  numpages =     "6",
+  pages =        "114711",
+  keywords =     "eigenvalues and eigenfunctions; iron; potential energy
+                 surfaces; vacancies (crystal)",
+  URL =          "http://link.aip.org/link/?JCP/130/114711/1",
+  doi =          "10.1063/1.3088532",
+  notes =        "improvements to art, refs for methods to find
+                 transition pathways",
+}