nearly finished first pec results

diff --git a/posic/talks/seminar_2008.tex b/posic/talks/seminar_2008.tex
index 226bd5a..6956030 100644 (file)
--- a/posic/talks/seminar_2008.tex
+++ b/posic/talks/seminar_2008.tex
@@ -623,17 +623,18 @@
 
  \small
 
- \begin{minipage}{4cm}
+ \begin{minipage}{5.5cm}
  \begin{itemize}
   \item $E_f=0.47$ eV
   \item sehr h"aufig beobachtet
-  \item energetisch g"unstigste Konfiguration
-  \item experimentelle und theoretische Best"atigungen
+  \item energetisch g"unstigste\\ Konfiguration
+  \item experimentelle und theoretische Hinweise
         f"ur die Existenz dieser Konfiguration
  \end{itemize}
+ \includegraphics[width=5.6cm]{c_in_si_100.ps}
  \end{minipage}
- \begin{minipage}{8cm}
- \includegraphics[width=9cm]{100-c-si-db_s.eps}
+ \begin{minipage}{7cm}
+ \includegraphics[width=8cm]{100-c-si-db_s.eps}
  \end{minipage}
 
 \end{slide}
@@ -702,45 +703,57 @@
  \includegraphics[width=6.3cm]{pc_si-c_c-c.eps}
  \includegraphics[width=6.3cm]{pc_si-si.eps}
 
- \begin{minipage}[t]{6.3cm}
- \scriptsize
-    \begin{itemize}
-      \item C-C, 0.15 nm: NN-Abstand in Graphit bzw. Diamant\\
-            $\Rightarrow$ Formation of strong C-C bonds
-                          (almost only for high C concentrations)
-      \item Si-C, 0.19 nm: NN-Abstand in 3C-SiC
-      \item C-C, 0.31 nm: C-C Abstand in 3C-SiC\\
-            (vekettetrkettete, verschieden orientierte 100 C-Si Dumbbells)
-      \item Si-Si shows non-zero g(r) values around 0.31 nm like in 3C-SiC\\
-            and a decrease at regular distances\\
-            (no clear peak,
-             interval of enhanced g(r) corresponds to C-C peak width)
-    \end{itemize}
- \end{minipage}
- \begin{minipage}[t]{6.3cm}
- \tiny
-   \begin{itemize}
-      \item Low C concentration (i.e. $V_1$):
-            The <100> dumbbell configuration
-            \begin{itemize}
-              \item is identified to stretch the Si-Si next neighbour distance
-                    to 0.3 nm
-              \item is identified to contribute to the Si-C peak at 0.19 nm
-              \item explains further C-Si peaks (dashed vertical lines)
-            \end{itemize}
-            $\Rightarrow$ C atoms are first elements arranged at distances
-                          expected for 3C-SiC\\
-            $\Rightarrow$ C atoms pull the Si atoms into the right
-                          configuration at a later stage
-      \item High C concentration (i.e. $V_2$ and $V_3$):
-            \begin{itemize}
-              \item High amount of damage introduced into the system
-              \item Short range order observed but almost no long range order
-            \end{itemize}
-            $\Rightarrow$ Start of amorphous SiC-like phase formation\\
-            $\Rightarrow$ Higher temperatures required for proper SiC formation
-    \end{itemize}
- \end{minipage}
+ \vspace{-0.1cm}
+
+ \footnotesize
+ \underline{C-C, 0.15 nm}:\\
+ NN-Abstand in Graphit/Diamant\\
+ $\Rightarrow$ starke C-C Bindungen bei hohen Konz.\\
+ \underline{Si-C, 0.19 nm}:\\
+ NN-Abstand in 3C-SiC\\
+ \underline{C-C, 0.31 nm}:\\
+ C-C Abstand in 3C-SiC\\
+ vekettete, verschieden orientierte 100 C-Si DBs\\
+ \underline{Si-Si, $\sim$ 0.31 nm}:\\
+ g(r) erh"oht, Si-Si in 3C-SiC\\
+ Intervall entspricht C-C Peakbreite\\
+ Abfall bei regul"aren Abst"anden
+
+ \begin{picture}(0,0)(-175,-40)
+ \includegraphics[width=4.0cm]{conc_100_c-si-db_02.eps}
+ \end{picture}
+ \begin{picture}(0,0)(-278,-10)
+ \includegraphics[width=4.0cm]{conc_100_c-si-db_01.eps}
+ \end{picture}
+
+ \end{slide}
+
+ \begin{slide}
+
+ {\large\bf
+  Simulationen zum Ausscheidungsvorgang
+ }
+
+ \includegraphics[width=6.3cm]{pc_si-c_c-c.eps}
+ \includegraphics[width=6.3cm]{c_in_si_100.ps}
+
+ \footnotesize
+ 
+ \underline{Niedrige C-Konzentration ($V_1$)}:
+ 100 Dumbbell-Konfiguration
+ \begin{itemize}
+  \item dehnt Si-Si NN-Abstand auf 0.3 nm
+  \item Beitrag zum Si-C Peak bei 0.19 nm
+  \item erkl"art weitere Si-C Peaks (gestrichelte Linien)
+ \end{itemize}
+ $\Rightarrow$ C-Atome als erstes im erwarteten 3C-SiC-Abstand
+ \underline{Hohe C-Konzentration ($V_2$ und $V_3$)}:
+ \begin{itemize}
+  \item High amount of damage introduced into the system
+  \item Short range order observed but almost no long range order
+ \end{itemize}
+ $\Rightarrow$ Start of amorphous SiC-like phase formation\\
+ $\Rightarrow$ Higher temperatures required for proper SiC formation
 
 \end{slide}