last changes today

diff --git a/posic/publications/emrs2008_full.tex b/posic/publications/emrs2008_full.tex
index 7f7aa62..13f92c4 100644 (file)
--- a/posic/publications/emrs2008_full.tex
+++ b/posic/publications/emrs2008_full.tex
@@ -50,7 +50,7 @@
 
 \selectlanguage{english}
 
-\vspace{24pt}
+%\vspace{24pt}
 
 \section*{Abstract}
 The precipitation process of silicon carbide in heavily carbon doped silicon is not yet understood for the most part.
@@ -66,7 +66,7 @@ Furthermore a minimal carbon concentration necessary for precipitation is examin
 
 \section*{Introduction}
 Understanding the precipitation process of cubic silicon carbide (3C-SiC) in heavily carbon doped silicon will enable significant technological progress in thin film formation of an important wide band gap semiconductor material.
-On the other hand it will likewise offer perspectives for processes which rely upon prevention of precipitation processes, e.g. for the fabrication of strained silicon.
+On the other hand it will likewise offer perspectives for processes which rely upon prevention of precipitation events, e.g. the fabrication of strained silicon.
 
 Epitaxial growth of 3C-SiC films is achieved either by ion implantation or chemical vapour deposition techniques.
 Surface effects dominate the CVD process while for the implantation process carbon is introduced into bulk silicon.
@@ -79,10 +79,10 @@ Finally these results are outlined and conclusions are infered.
 
 \section*{Supposed conversion mechanism}
 Silicon (Si) nucleates in diamond structure.
-Contains of two fcc lattices, on displaced one quarter of volume diagonal compared to the first.
-3C-SiC nucleates in zincblende structure where the shifted fcc lattice sites are composed of carbon atoms.
+This structure is composed of two fcc lattices, which are displaced by one quarter of the volume diagonal.
+3C-SiC nucleates in zincblende structure, where the atoms of one fcc lattice are substituted by carbon atoms.
 The length of four lattice constants of Si is approximately equal to the length of five 3C-SiC lattice constants ($4a_{Si}\approx 5a_{3C-SiC}$), which means that there is a lattice misfit of almost 20\%.
-Due to this the silicon density of 3C-SiC is slightly lower than the one of silicon.
+Due to this the silicon density of 3C-SiC is slightly lower than the one of Si.
 
 \begin{figure}[!h]
  \begin{center}
@@ -95,7 +95,7 @@ Due to this the silicon density of 3C-SiC is slightly lower than the one of sili
  \begin{minipage}{5.5cm}
  \includegraphics[width=5cm]{sic_prec_seq_03.eps}
  \end{minipage}
- \caption{Schematic of the supposed conversion mechanism of highly C doped Si into SiC. C is represented by red dots, Si by black dots and residual Si atoms by white dots with black border.}
+ \caption{Schematic of the supposed conversion mechanism of highly C doped Si into SiC. C is represented by red dots, Si by black dots and residual Si atoms by white dots with black border. The figure shows the dumbbell formation (left), the agglomeration into clusters (middle) and the situation after precipitation (right).}
  \end{center}
 \end{figure}
 There is a supposed conversion mechanism of heavily carbon doped Si into SiC.
@@ -121,9 +121,8 @@ To exclude surface effects periodic boundary conditions are applied.
 \begin{figure}[!h]
  \begin{center}
  \includegraphics[width=8cm]{unit_cell.eps}
- \caption{Distinguished interstitial configurations.}
+ \caption{Insertion positions for the tetrahedral (red), hexagonal (green) and <110> dumbbell (purple) interstitial configuration.}
  \end{center}
- \label{}
 \end{figure}
 To investigate the intesrtitial configurations of C and Si in Si, a simulation volume of 9 silicon unit cells in each direction is used.
 The temperature is set to $T=0\, K$.
@@ -167,7 +166,6 @@ This type of configuration is frequently observed for the random insertion runs.
  \includegraphics[width=8cm]{../plot/foo150.ps}
  \caption{Diffusion constants}
  \end{center}
- \label{}
 \end{figure}
 The influence of interstitials on the diffusion of a single carbon atom is displayed in Fig. 4.
 \ldots