+{\color{blue}
+Alternatively: Explain general problem of the slow propagation through phase space using conventional molecular dynamics and the accompanying difficulties for conformational search.
+Explain the methods available to overcome this limitation.
+Point out, that in this work, the sharp cut-off introduces unphysical and overestimated high forces between next neighboured atoms enhancing the problem of slow phase space propagation.
+}
+
+The formation of an amoprhous SiC-like phase although experiments show crystalline 3C-SiC precipitates at prevailing temperatures remains unexplained.
+The answer is found in the short range and sharp cut-off of the employed bond order potential.
+The cut-off funtion, which limits the interacting ions to the next neighboured atoms by gradually pushing the interaction force and energy to zero betwenn the first and second next neighbour distance, is responsible for overestimated and unphysical high forces of next neighboured atoms \cite{mattoni2007}.
+Indeed it is not only the strong C-C bond which is hard to break inhibiting carbon diffusion and further conformational changes.
+This is also true for the low concentration simulations dominated by C-Si dumbbells spread over the whole simulation volume.
+The bonds of these C-Si pairs are also affected by the cut-off artifact preventing carbon diffusion and agglomeration of the dumbbells.
+This can be seen from the almost horizontal progress of the total energy graph in the continuation step, even for the low concentration simulation.
+Thus, applying longer time scales in order to enable the system to undergo diffusion events, which become very unlikely to happen due to the overestimated bond strengthes, and in the end observe the agglomeration and precipitation might not be sufficient.
+On the other hand longer time scales are not accessible to simulation due to limited computational ressources.
+Alternatively the approach of using higher temperatures to speed up or actually make possible the steps involved in the precipitation mechanism is applied.