+To compensate overestimated diffusion barriers we performed simulations at elevated temperatures.
+TOOD: High C conc simulations ... then low:
+Time scales are still too low to observe C agglomeration sufficient for SiC precipitation, which is attributed to the slow phase space propagation inherent to MD in general.
+However, we observed a phase tranisiton of the C$_{\text{i}}$-dominated into a clearly C$_{\text{s}}$-dominated structure.
+The amount of substitutionally occupied C atoms increases with increasing temperature.
+Entropic contributions are assumed to be responsible for these structures that deviate from the ground state at 0 K.
+Indeed, in a previous ab initio MD simulation\cite{zirkelbach10b} performed at \unit[900]{$^{\text{C}}$} we observed the departing of a Si$_{\text{i}}$ \hkl<1 1 0> DB located next to a C$_{\text{s}}$ atom instead of a recombination into the ground state configuration, i.e. a C$_{\text{i}}$ \hkl<1 0 0> DB.