polytypes substituted

diff --git a/posic/thesis/sic.tex b/posic/thesis/sic.tex
index cb46a7b..5629f6f 100644 (file)
--- a/posic/thesis/sic.tex
+++ b/posic/thesis/sic.tex
@@ -26,13 +26,21 @@ The polytypes differ in the one-dimensional stacking sequence of identical, clos
 Each SiC bilayer can be situated in one of three possible positions (abbreviated a, b or c) with respect to the lattice while maintaining the tetrahedral bonding scheme of the crystal.
 \begin{figure}[t]
 \begin{center}
 Each SiC bilayer can be situated in one of three possible positions (abbreviated a, b or c) with respect to the lattice while maintaining the tetrahedral bonding scheme of the crystal.
 \begin{figure}[t]
 \begin{center}

-\includegraphics[width=10cm]{polytypes.eps}
+\includegraphics[height=5.5cm]{polytypes_own.eps}\\[0.1cm]
+\begin{minipage}{0.45\textwidth}
+{\small
+\hspace*{0.05cm} a \hspace*{0.09cm} b \hspace*{0.09cm} c \hspace*{0.44cm} a \hspace*{0.09cm} b \hspace*{0.44cm} a \hspace*{0.09cm} b \hspace*{0.09cm} c \hspace*{0.44cm} a \hspace*{0.09cm} b \hspace*{0.09cm} c \hspace*{0.09cm} a\\
+\hspace*{0.5cm} 3C \hspace*{0.9cm} 2H \hspace*{1.0cm} 4H \hspace*{1.3cm} 6H
+}
+\end{minipage}
+%\includegraphics[width=10cm]{polytypes.eps}

 \end{center}
 \caption{Stacking sequence of SiC bilayers of the most common polytypes of SiC (from left to right): 3C, 2H, 4H and 6H.}
 \label{fig:sic:polytypes}
 \end{figure}
 Fig.~\ref{fig:sic:polytypes} shows the stacking sequence of the most common and technologically most important SiC polytypes, which are the cubic (3C) and hexagonal (2H, 4H and 6H) polytypes.
 
 \end{center}
 \caption{Stacking sequence of SiC bilayers of the most common polytypes of SiC (from left to right): 3C, 2H, 4H and 6H.}
 \label{fig:sic:polytypes}
 \end{figure}
 Fig.~\ref{fig:sic:polytypes} shows the stacking sequence of the most common and technologically most important SiC polytypes, which are the cubic (3C) and hexagonal (2H, 4H and 6H) polytypes.
 

+\bibpunct{}{}{,}{n}{}{}

 \begin{table}[t]
 \begin{center}
 \begin{tabular}{l c c c c c c}
 \begin{table}[t]
 \begin{center}
 \begin{tabular}{l c c c c c c}


@@ -51,9 +59,10 @@ Thermal conductivity [W/cmK] & 5.0 & 4.9 & 4.9 & 1.5 & 1.3 & 22 \\
 \hline
 \end{tabular}
 \end{center}
 \hline
 \end{tabular}
 \end{center}

-\caption[Properties of SiC polytypes and other semiconductor materials.]{Properties of SiC polytypes and other semiconductor materials. Doping concentrations are $10^{16}\text{ cm}^{-3}$ (A) and $10^{17}\text{ cm}^{-3}$ (B) respectively. References: \cite{wesch96,casady96,park98}.}
+\caption[Properties of SiC polytypes and other semiconductor materials.]{Properties of SiC polytypes and other semiconductor materials. Doping concentrations are $10^{16}\text{ cm}^{-3}$ (A) and $10^{17}\text{ cm}^{-3}$ (B) respectively. References: \cite[]{wesch96,casady96,park98}.}

 \label{table:sic:properties}
 \end{table}
 \label{table:sic:properties}
 \end{table}

+\bibpunct{[}{]}{,}{n}{}{}

 % todo add more refs + check all values!
 Different polytypes of SiC exhibit different properties.
 Some of the key properties are listed in Table~\ref{table:sic:properties} and compared to other technologically relevant semiconductor materials.
 % todo add more refs + check all values!
 Different polytypes of SiC exhibit different properties.
 Some of the key properties are listed in Table~\ref{table:sic:properties} and compared to other technologically relevant semiconductor materials.


@@ -421,5 +430,3 @@ On the other hand, processes relying upon prevention of precipitation in order t
 % strane94/guedj98: my model - c redist by si int (spe) and surface diff (mbe)
 % serre95: low/high t implants -> mobile c_i / non-mobile sic precipitates
 
 % strane94/guedj98: my model - c redist by si int (spe) and surface diff (mbe)
 % serre95: low/high t implants -> mobile c_i / non-mobile sic precipitates
 

-% todo - own polytype stacking sequence image
-