typo

diff --git a/posic/publications/defect_combos.tex b/posic/publications/defect_combos.tex
index fa11e28..947c86e 100644 (file)
--- a/posic/publications/defect_combos.tex
+++ b/posic/publications/defect_combos.tex
@@ -178,7 +178,7 @@ No other configuration, within the ones that are mentioned, is affected.
 \r
 Concerning the mobility of the ground state Si$_{\text{i}}$, an activation energy of \unit[0.67]{eV} was found for the Si$_{\text{i}}$ \hkl[0 1 -1] to \hkl[1 1 0] DB configuration located at the next neighbored Si lattice site in \hkl[1 1 -1] direction.\r
 Further investigations revealed a barrier of \unit[0.94]{eV} for the Si$_{\text{i}}$ \hkl[1 1 0] DB to Si$_{\text{i}}$ H, \unit[0.53]{eV} for the Si$_{\text{i}}$ \hkl[1 1 0] DB to Si$_{\text{i}}$ T and \unit[0.35]{eV} for the Si$_{\text{i}}$ H to Si$_{\text{i}}$ T transition.\r
 \r
 Concerning the mobility of the ground state Si$_{\text{i}}$, an activation energy of \unit[0.67]{eV} was found for the Si$_{\text{i}}$ \hkl[0 1 -1] to \hkl[1 1 0] DB configuration located at the next neighbored Si lattice site in \hkl[1 1 -1] direction.\r
 Further investigations revealed a barrier of \unit[0.94]{eV} for the Si$_{\text{i}}$ \hkl[1 1 0] DB to Si$_{\text{i}}$ H, \unit[0.53]{eV} for the Si$_{\text{i}}$ \hkl[1 1 0] DB to Si$_{\text{i}}$ T and \unit[0.35]{eV} for the Si$_{\text{i}}$ H to Si$_{\text{i}}$ T transition.\r

-The obtained values are within the same order of magnitude than values derived from other ab initio studies\cite{bloechl93,sahli95}.\r
+The obtained values are within the same order of magnitude than values derived from other ab initio studies\cite{bloechl93,sahli05}.\r

 % look for values in literature for neutraly charged Si_i diffusion\r
 % T seems to constitute a saddle point according to migration calculations\r
 \r
 % look for values in literature for neutraly charged Si_i diffusion\r
 % T seems to constitute a saddle point according to migration calculations\r
 \r