% high t stable config, no redistr
C implanted at room temperature was found to be able to migrate towards the surface in contrast to implantations at \degc{500}, which do not show redistribution of the C atoms \cite{serre95}.
This excellently conforms to the results of the MD simulations at different temperatures, which show the formation of highly mobile \ci{} \hkl<1 0 0> DBs for low and much more stable \cs{} defects for high temperatures.
+This is likewise suggested by IBS experiments utilizing implantation temperatures of \degc{550} followed by incoherent lamp annealing at temperatures as high as \degc{1405} required for the C segregation due to the stability of \cs{} \cite{reeson87}.
% high imp temps more effective to achieve ?!? ...
Furthermore, increased implantation temperatures were found to be more efficient than high temperatures in the postannealing step concerning the formation of topotactically aligned 3C-SiC precipitates \cite{kimura82,eichhorn02}.
-Strong C-C bonds, which are hard to break by thermal annealing, were found to effectively aggravate the restructuring process of such configurations \cite{deguchi92}.
+%
+Particularly strong C-C bonds, which are hard to break by thermal annealing, were found to effectively aggravate the restructuring process of such configurations \cite{deguchi92}.
These bonds preferentially arise if additional kinetic energy provided by an increase of the implantation temperature is missing to accelerate or even enable atomic rearrangements in regions exhibiting a large amount of C atoms.
This is assumed to be related to the problem of slow structural evolution encountered in the high C concentration simulations.
%
-% WTF!
-% hier lieber guedj98 und strane94 ... ?
-Indeed, considering the efficiency of high implantation temperatures, an experimental argument exists, which points to the precipitation mechanism based on agglomeration of \cs.
-Implantations of an understoichiometric dose at room temperature followed by thermal annealing result in small spherical sized C$_{\text{i}}$ agglomerates below \unit[700]{$^{\circ}$C} and SiC precipitates of the same size above \unit[700]{$^{\circ}$C}\cite{werner96} annealing temperature.
-Since, however, the implantation temperature is considered more efficient than the postannealing temperature, SiC precipitates are expected -- and indeed are observed for as-implanted samples \cite{lindner99,lindner01} -- in implantations performed at \unit[450]{$^{\circ}$C}.
-Implanted C is therefore expected to occupy substitutionally usual Si lattice sites right from the start.
+%Considering the efficiency of high implantation temperatures, experimental arguments exist, which point to the precipitation mechanism based on the agglomeration of \cs.
+More substantially, understoichiometric implantations at room temperature into preamorphized Si followed by a solid phase epitaxial regrowth step at \degc{700} result in Si$_{1-x}$C$_x$ layers in the diamond cubic phase with C residing on substitutional Si lattice sites \cite{strane93}.
+The strained structure is found to be stable up to \degc{810}.
+Coherent clustering followed by precipitation is suggested if these structures are annealed at higher temperatures.
+%
+Similar, implantations of an understoichiometric dose into c-Si at room temperature followed by thermal annealing result in small spherical sized C$_{\text{i}}$ agglomerates below \unit[700]{$^{\circ}$C} and SiC precipitates of the same size above \unit[700]{$^{\circ}$C}\cite{werner96} annealing temperature.
+Since, however, the implantation temperature is considered more efficient than the postannealing temperature, SiC precipitates are expected and indeed observed for as-implanted samples \cite{lindner99,lindner01} in implantations performed at \unit[450]{$^{\circ}$C}.
+Thus, implanted C is likewise expected to occupy substitutionally regular Si lattice sites right from the start for implantations into c-Si at elevated temperatures.
+%
%
% low t - randomly ...
% high t - epitaxial relation ...
Moreover, implantations below the optimum temperature for the IBS of SiC show regions of randomly oriented SiC crystallites whereas epitaxial crystallites are found for increased temperatures \cite{lindner99}.
The results of the MD simulations can be interpreted in terms of these experimental findings.
-The successive occupation of regular Si lattice sites by \cs{} atoms, as observed in the high temperature MD simulations and assumed from results of the quantum-mechanical investigations, perfectly statisfies the epitaxial relation of substrate and precipitate.
+The successive occupation of regular Si lattice sites by \cs{} atoms as observed in the high temperature MD simulations and assumed from results of the quantum-mechanical investigations perfectly statisfies the epitaxial relation of substrate and precipitate.
In contrast, there is no obvious reason for a topotactic transition of \ci{} \hkl<1 0 0> DB agglomerates, as observed in the low temperature MD simulations, into epitaxially aligned precipitates.
The latter transition would necessarily involve a much more profound change in structure.
% amorphous region for low temperatures
Experimentally, randomly oriented precipitates might also be due to SiC nucleation within the arising amorphous matrix \cite{lindner99}.
In simulation, an amorphous SiC phase is formed for high C concentrations.
This is due to high amounts of introduced damage within a short period of time resulting in essentially no time for structural evolution, which is comparable to the low temperature experiments, which lack the kinetic energy necessary for recrystallization of the highly damaged region.
-Indeed, the complex transformation of agglomerated \ci{} DBs, as suggested by results of the low C concentration simulations, could involve an intermediate amorphous phase probably accompanied by the loss of alignment with respect to the Si host matrix.
+Indeed, the complex transformation of agglomerated \ci{} DBs as suggested by results of the low C concentration simulations could involve an intermediate amorphous phase probably accompanied by the loss of alignment with respect to the Si host matrix.
%
% perfectly explainable by Cs obvious hkl match but not for DBs
In any case, the precipitation mechanism by accumulation of \cs{} obviously statisfies the experimental finding of identical \hkl(h k l) planes of substrate and precipitate.
-%
+
% no contradictions, something in interstitial lattice, projected potential ...
Finally, it is worth to point out that the precipitation mechanism based on \cs{} does not necessarily contradict to results of the HREM studies \cite{werner96,werner97,lindner99_2}, which propose precipitation by agglomeration of \ci.
In these studies, regions of dark contrasts are attributed to C atoms that reside in the interstitial lattice in an otherwise undisturbed Si lattice.
%In both cases Si$_{\text{i}}$ might be attributed a third role, which is the partial compensation of tensile strain that is present either in the stretched SiC or at the interface of the contracted SiC and the Si host.
To conclude, results of the present study indicate a precipitation of SiC in Si by successive agglomeration of \cs.
-\si{}, which is likewise existent, serves several needs:
-... Incoherent but epitaxially aligned SiC precipitates are ...
-
-
+\si{}, which is likewise existent, serves several needs: as a vehicle to rearrange the \cs{} atoms, as a building block for the surrounding Si host or further SiC and for strain compensation, either in the stretched SiC structure or at the interface of the SiC precipitate and the Si matrix.
+% todo \si reduced interfacial energy
+%
+Results of the atomistic simulation study indicating the respective precipitation mechanism conform well with other experimental findings.
+%
Thus, we propose an increased participation of C$_{\text{s}}$ already in the initial stages of the implantation process at temperatures above \unit[450]{$^{\circ}$C}, the temperature most applicable for the formation of SiC layers of high crystalline quality and topotactical alignment\cite{lindner99}.
Thermally activated, C$_{\text{i}}$ is enabled to turn into C$_{\text{s}}$ accompanied by Si$_{\text{i}}$.
The associated emission of Si$_{\text{i}}$ is needed for several reasons.
Si$_{\text{i}}$ serves either as a supply of Si atoms needed in the surrounding of the contracted precipitates or as an interstitial defect minimizing the emerging strain energy of a coherent precipitate.
The latter has been directly identified in the present simulation study, i.e. structures of two C$_{\text{s}}$ atoms and Si$_{\text{i}}$ located in the vicinity.
-It is, thus, concluded that precipitation occurs by successive agglomeration of C$_{\text{s}}$ as already proposed by Nejim et~al.~\cite{nejim95}.
-This agrees well with a previous ab initio study on defects in C implanted Si\cite{zirkelbach11a}, which showed C$_{\text{s}}$ to occur in all probability.
-However, agglomeration and rearrangement is enabled by mobile C$_{\text{i}}$, which has to be present at the same time and is formed by recombination of C$_{\text{s}}$ and Si$_{\text{i}}$.
-In contrast to assumptions of an abrupt precipitation of an agglomerate of C$_{\text{i}}$\cite{werner96,werner97,eichhorn99,lindner99_2,koegler03}, however, structural evolution is believed to occur by a successive occupation of usual Si lattice sites with substitutional C.
-This mechanism satisfies the experimentally observed alignment of the \hkl(h k l) planes of the precipitate and the substrate, whereas there is no obvious reason for the topotactic orientation of an agglomerate consisting exclusively of C-Si dimers, which would necessarily involve a much more profound change in structure for the transition into SiC.
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