\subsubsection{Improved analytical bond order potential}
Although the Tersoff potential is one of the most widely used potentials, there are some shortcomings.
\subsubsection{Improved analytical bond order potential}
Although the Tersoff potential is one of the most widely used potentials, there are some shortcomings.
Due to this, and since the first approach labeled T1~\cite{tersoff_si1} turned out to be unstable~\cite{dodson87}, two further parametrizations exist, T2~\cite{tersoff_si2} and T3~\cite{tersoff_si3}.
While T2 describes well surface properties, T3 yields improved elastic constants and should be used for describing bulk properties.
However, T3, which is used in the Si/C potential, suffers from an underestimation of the dimer binding energy.
Due to this, and since the first approach labeled T1~\cite{tersoff_si1} turned out to be unstable~\cite{dodson87}, two further parametrizations exist, T2~\cite{tersoff_si2} and T3~\cite{tersoff_si3}.
While T2 describes well surface properties, T3 yields improved elastic constants and should be used for describing bulk properties.
However, T3, which is used in the Si/C potential, suffers from an underestimation of the dimer binding energy.
The substitutional or vacancy defect is realized by replacing or removing one atom contained in the supercell.
Interstitial defects are created by adding an atom at positions located in the space between regular lattice sites.
Once the intuitively created defect structure is generated structural relaxation methods will yield the respective local minimum configuration.
The substitutional or vacancy defect is realized by replacing or removing one atom contained in the supercell.
Interstitial defects are created by adding an atom at positions located in the space between regular lattice sites.
Once the intuitively created defect structure is generated structural relaxation methods will yield the respective local minimum configuration.