sync aux<->pb

diff --git a/posic/thesis/const_sic.tex b/posic/thesis/const_sic.tex
index 65373c7..20bb791 100644 (file)
--- a/posic/thesis/const_sic.tex
+++ b/posic/thesis/const_sic.tex
@@ -1,6 +1,7 @@
 \chapter{Investigation of self-constructed 3C-SiC precipitates}
 
 \section{3C-SiC precipitate in crystalline silicon}
 \chapter{Investigation of self-constructed 3C-SiC precipitates}
 
 \section{3C-SiC precipitate in crystalline silicon}

+\label{section:const_sic:prec}

 
 A spherical 3C-SiC precipitate enclosed in a c-Si surrounding is constructed as it is expected from IBS experiments and from simulations that finally succeed in simulating the precipitation event.
 On the one hand this sheds light on characteristic values like the radial distribution function or the total amount of free energy for such a configuration that is aimed to be reproduced by simulation.
 
 A spherical 3C-SiC precipitate enclosed in a c-Si surrounding is constructed as it is expected from IBS experiments and from simulations that finally succeed in simulating the precipitation event.
 On the one hand this sheds light on characteristic values like the radial distribution function or the total amount of free energy for such a configuration that is aimed to be reproduced by simulation.

diff --git a/posic/thesis/defects.tex b/posic/thesis/defects.tex
index 774d5df..4435c96 100644 (file)
--- a/posic/thesis/defects.tex
+++ b/posic/thesis/defects.tex
@@ -1321,6 +1321,8 @@ In the same way the energetically most unfavorable configuration can be explaine
 The substitutional C is located next to the lattice site shared by the \hkl<1 1 0> Si self-interstitial along the \hkl<1 -1 0> direction.
 Thus, the compressive stress along \hkl<1 1 0> of the Si \hkl<1 1 0> interstitial is not compensated but intensified by the tensile stress of the substitutional C atom, which is no longer loacted along the direction of stress.
 
 The substitutional C is located next to the lattice site shared by the \hkl<1 1 0> Si self-interstitial along the \hkl<1 -1 0> direction.
 Thus, the compressive stress along \hkl<1 1 0> of the Si \hkl<1 1 0> interstitial is not compensated but intensified by the tensile stress of the substitutional C atom, which is no longer loacted along the direction of stress.
 

+{\color{red}Todo: Erhart/Albe calc for most and less favorable configuration!}
+

 {\color{red}Todo: Mig of C-Si DB conf to or from C sub + Si 110 in progress.}
 
 \section{Migration in systems of combined defects}
 {\color{red}Todo: Mig of C-Si DB conf to or from C sub + Si 110 in progress.}
 
 \section{Migration in systems of combined defects}

diff --git a/posic/thesis/md.tex b/posic/thesis/md.tex
index a6756d3..f2f8eab 100644 (file)
--- a/posic/thesis/md.tex
+++ b/posic/thesis/md.tex
@@ -495,7 +495,7 @@ Since longer time scales are not sufficient \ldots
 {\color{red}Todo: other approaches?}
 
 {\color{red}Todo: ART MD?\\
 {\color{red}Todo: other approaches?}
 
 {\color{red}Todo: ART MD?\\

-How about forcing a migration of a $V_2$ configuration to a constructed prec configuration, determine the saddle point configuration and continue the simulation from his configuration?
+How about forcing a migration of a $V_2$ configuration to a constructed prec configuration, determine the saddle point configuration and continue the simulation from this configuration?

 }
 
 \section{Conclusions concerning the SiC conversion mechanism}
 }
 
 \section{Conclusions concerning the SiC conversion mechanism}