new foo
authorhackbard <hackbard@sage.physik.uni-augsburg.de>
Mon, 18 Feb 2008 18:40:38 +0000 (19:40 +0100)
committerhackbard <hackbard@sage.physik.uni-augsburg.de>
Mon, 18 Feb 2008 18:40:38 +0000 (19:40 +0100)
posic/talks/dpg_2008.tex

index 5349eac..d156126 100644 (file)
 
 % start of contents
 
+\begin{slide}
+
+ {\large\bf
+  Motivation / Introduction
+ }
+
+ Why C in Si?
+
+ \begin{itemize}
+  \item 3C-SiC wide band gap semiconductor formation
+  \item Strained Si
+ \end{itemize}
+
+
+\end{slide}
+
+ \small
 \begin{slide}
 
  {\large\bf
  \begin{minipage}[t]{4.0cm}
  \underline{Hexagonal}
  \begin{itemize}
-  \item $E_F^{\star}=4.48\, eV$
+  \item $E_F^{\star}\approx4.48\, eV$
   \item unstable!
  \end{itemize}
  \end{minipage}
  \begin{minipage}[t]{4.0cm}
  \underline{Hexagonal}
  \begin{itemize}
-  \item $E_F\sim5.6\, eV$
+  \item $E_F^{\star}\approx5.6\, eV$
   \item unstable!
  \end{itemize}
  \end{minipage}