-However, the process is governed by both, C$_{\text{s}}$ accompanied by Si$_{\text{i}}$ as well as C$_{\text{i}}$.\r
-... HIER WEITER ...\r
-By this, explains the alignment of the \hkl(h k l) lattice planes of the precipitate and the substrate.\r
-No contradiction to ... has Si int ... nice to explain cloudy TEM images indicating atoms in interstitial lattice.\r
-\r
-Our calculations show that point defects which unavoidably are present after ion implantation significantly influence the mobility of implanted carbon \r
-in the silicon crystal.\r
-A large capture radius has been found for... \r
-Especially vacancies.... \r
-\r
-\r
-C$_{\text{s}}$ must be attributed an important role in SiC formation ...\r
-\r
-Spin polarized ... Si or C-C show qualitatively other defect structure than C-Si , in which the C forms almot colinear bond and Si remains 120 ... COOL!\r
+However, the agglomeration and rearrangement of C$_{\text{s}}$ is only possible by mobile C$_{\text{i}}$, which has to be present at the same time.\r
+Thus, the process is governed by both, C$_{\text{s}}$ accompanied by Si$_{\text{i}}$ as well as C$_{\text{i}}$.\r
+It is worth to mention that there is no contradiction to results of the HREM studies\cite{werner96,werner97,eichhorn99,lindner99_2,koegler03}.\r
+Regions showing dark contrasts in an otherwise undisturbed Si lattice are attributed to C atoms in the interstitial lattice.\r
+However, there is no particular reason for the C species to reside in the interstitial lattice.\r
+Contrasts are also assumed for Si$_{\text{i}}$.\r
+Once precipitation occurs regions of dark contrasts disappear in favor of Moir\'e patterns indicating 3C-SiC in c-Si due to the mismatch in the lattice constant.\r
+Until then, however, these regions are either composed of stretched coherent SiC and interstitials or of yet contracted incoherent SiC surrounded by Si and interstitials too small to be detected in HREM.\r
+In both cases Si$_{\text{i}}$ might be attributed a third role, which is the partial compensation of tensile strain either in the stretched SiC or at the interface of the contracted SiC and the Si host.\r
+\r
+In addition, the experimentally observed alignment of the \hkl(h k l) planes of the precipitate and the substrate is statisfied by the mechanism of successive positioning of C$_{\text{s}}$.\r
+In contrast, there is no obvious reason for the topotactic orientation of an agglomerate consisting exclusively of C-Si dimers, which would necessarily involve a much more profound change in structure for the transition into SiC.\r