+The main difficulties in SiC heteroepitaxy on Si is due to the lattice mismatch of Si and SiC and the difference in the thermal expansion coefficient of \unit[8]{\%}.
+Thus, in most of the applied CVD and MBE processes, the SiC layer formation process is split into two steps, the surface carbonization and the growth step, as proposed by Nishino~et~al. \cite{nishino83}.
+Cleaning of the substrate surface with HCl is required prior to carbonization.
+During carbonization the Si surface is chemically converted into a SiC film with a thickness of a few nm by exposing it to a flux of C atoms and concurrent heating up to temperatures about \unit[1400]{$^{\circ}$C}.
+In a next step, the epitaxial deposition of SiC is realized by an additional supply of Si atoms at similar temperatures.