+\begin{figure}[!ht]
+\begin{center}
+\includegraphics[width=12cm]{pc_0.ps}
+\end{center}
+\caption[Radial distribution of a 3C-SiC precipitate embeeded in c-Si at $20\,^{\circ}\mathrm{C}$.]{Radial distribution of a 3C-SiC precipitate embeeded in c-Si at $20\,^{\circ}\mathrm{C}$. The Si-Si radial distribution of plain c-Si is plotted for comparison. Grey arrows mark bumps in the Si-Si distribution of the precipitate configuration, which do not exist in plain c-Si.}
+\label{fig:md:pc_sic-prec}
+\end{figure}
+Figure \ref{fig:md:pc_sic-prec} shows the radial distribution of the obtained configuration.
+Comparing the Si-Si radial distribution of plain c-Si with the one of the precipitate configuration no difference is observed for the distances of neighboured silicon pairs.
+Although no sifnificant change of the lattice constant of the c-Si matrix was assumed, surprisingly there is no change at all within observational accuracy.
+Nice, since obviously matrix is big enough to exclude size effects in the system in which pbc are applied, we can consider it single precipitate in a infinite Si matrix.
+A new peak for the silicon pairs arises at 0.307 nm.
+It is identical to the peak of the C-C distribution around that value.
+It corresponds to second next neighbours in 3C-SiC, which applies for Si as well as C pairs.
+The bumps of the Si-Si distribution at higher distances, which are marked by grey arrows and do not exist in plain c-Si, can be explained in the same manner.
+They correspond to the fourth and sixth next neighbour in 3C-SiC.
+Again, these peaks apply to Si and C pairs and indeed it is easily identifiale how the C-C peaks at contribute to the bumps observed in the Si-Si distribution.
+
+4.34 \AA{} compared to 4.36 \AA{}.
+
+New lattice constant
+Surface energy