+\end{slide}
+
+\fi
+
+\begin{slide}
+
+\headphd
+{\large\bf
+ Formation of epitaxial single crystalline 3C-SiC
+}
+
+\footnotesize
+
+\vspace{0.2cm}
+
+\includegraphics[width=7cm]{ibs_3c-sic.eps}\\
+
+\begin{itemize}
+ \item \underline{Implantation step 1}\\[0.1cm]
+ Almost stoichiometric dose | \unit[180]{keV} | \degc{500}\\
+ $\Rightarrow$ Epitaxial {\color{blue}3C-SiC} layer \&
+ {\color{blue}precipitates}
+ \item \underline{Implantation step 2}\\[0.1cm]
+ Little remaining dose | \unit[180]{keV} | \degc{250}\\
+ $\Rightarrow$
+ Destruction/Amorphization of precipitates at layer interface
+ \item \underline{Annealing}\\[0.1cm]
+ \unit[10]{h} at \degc{1250}\\
+ $\Rightarrow$ Homogeneous 3C-SiC layer with sharp interfaces
+\end{itemize}
+
+\begin{pspicture}(0,0)(0,0)
+\rput(10.0,4.5){\rnode{init}{\psframebox[fillstyle=solid,fillcolor=white,linecolor=blue,linestyle=solid]{
+\begin{minipage}{5.3cm}
+ \begin{center}
+ {\color{blue}
+ 3C-SiC precipitation\\
+ not yet fully understood
+ }
+ \end{center}
+ \vspace*{0.1cm}
+ \renewcommand\labelitemi{$\Rightarrow$}
+ Details of the SiC precipitation
+ \begin{itemize}
+ \item significant technological progress\\
+ in SiC thin film formation
+ \item perspectives for processes relying\\
+ upon prevention of SiC precipitation
+ \end{itemize}
+\end{minipage}
+}}}
+\end{pspicture}
+
+