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journal rename
author
hackbard
<hackbard@sage.physik.uni-augsburg.de>
Thu, 9 Sep 2010 11:21:21 +0000
(13:21 +0200)
committer
hackbard
<hackbard@sage.physik.uni-augsburg.de>
Thu, 9 Sep 2010 11:21:21 +0000
(13:21 +0200)
bibdb/bibdb.bib
patch
|
blob
|
history
diff --git
a/bibdb/bibdb.bib
b/bibdb/bibdb.bib
index
034ff30
..
df700f1
100644
(file)
--- a/
bibdb/bibdb.bib
+++ b/
bibdb/bibdb.bib
@@
-68,7
+68,7
@@
author = "G. R. Fisher and P. Barnes",
title = "Towards a unified view of polytypism in silicon
carbide",
author = "G. R. Fisher and P. Barnes",
title = "Towards a unified view of polytypism in silicon
carbide",
- journal = "Philos
ophical Magazine Part
B",
+ journal = "Philos
. Mag.
B",
volume = "61",
pages = "217--236",
year = "1990",
volume = "61",
pages = "217--236",
year = "1990",
@@
-82,7
+82,7
@@
title = "Synthesis of nano-sized Si{C} precipitates in Si by
simultaneous dual-beam implantation of {C}+ and Si+
ions",
title = "Synthesis of nano-sized Si{C} precipitates in Si by
simultaneous dual-beam implantation of {C}+ and Si+
ions",
- journal = "Appl
ied Physics A: Materials Science \& Processing
",
+ journal = "Appl
. Phys. A: Mater. Sci. Process.
",
volume = "76",
pages = "827--835",
month = mar,
volume = "76",
pages = "827--835",
month = mar,
@@
-218,7
+218,7
@@
title = "Molecular dynamics with coupling to an external bath",
publisher = "AIP",
year = "1984",
title = "Molecular dynamics with coupling to an external bath",
publisher = "AIP",
year = "1984",
- journal = "
The Journal of Chemical Physics
",
+ journal = "
J. Chem. Phys.
",
volume = "81",
number = "8",
pages = "3684--3690",
volume = "81",
number = "8",
pages = "3684--3690",
@@
-235,8
+235,7
@@
title = "Molecular dynamics determination of defect energetics
in beta -Si{C} using three representative empirical
potentials",
title = "Molecular dynamics determination of defect energetics
in beta -Si{C} using three representative empirical
potentials",
- journal = "Modelling and Simulation in Materials Science and
- Engineering",
+ journal = "Modell. Simul. Mater. Sci. Eng.",
volume = "3",
number = "5",
pages = "615--627",
volume = "3",
number = "5",
pages = "615--627",
@@
-318,8
+317,7
@@
@Article{devanathan98,
title = "Computer simulation of a 10 ke{V} Si displacement
cascade in Si{C}",
@Article{devanathan98,
title = "Computer simulation of a 10 ke{V} Si displacement
cascade in Si{C}",
- journal = "Nuclear Instruments and Methods in Physics Research
- Section B: Beam Interactions with Materials and Atoms",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
volume = "141",
number = "1-4",
pages = "118--122",
volume = "141",
number = "1-4",
pages = "118--122",
@@
-334,7
+332,7
@@
@Article{devanathan98_2,
title = "Displacement threshold energies in [beta]-Si{C}",
@Article{devanathan98_2,
title = "Displacement threshold energies in [beta]-Si{C}",
- journal = "J
ournal of Nuclear Materials
",
+ journal = "J
. Nucl. Mater.
",
volume = "253",
number = "1-3",
pages = "47--52",
volume = "253",
number = "1-3",
pages = "47--52",
@@
-386,7
+384,7
@@
presence of carbon and boron",
publisher = "AIP",
year = "1998",
presence of carbon and boron",
publisher = "AIP",
year = "1998",
- journal = "J
ournal of Applied Physics
",
+ journal = "J
. Appl. Phys.
",
volume = "84",
number = "4",
pages = "1963--1967",
volume = "84",
number = "4",
pages = "1963--1967",
@@
-515,7
+513,7
@@
@Article{hobler05,
title = "Ab initio calculations of the interaction between
native point defects in silicon",
@Article{hobler05,
title = "Ab initio calculations of the interaction between
native point defects in silicon",
- journal = "Mater
ials Science and Engineering:
B",
+ journal = "Mater
. Sci. Eng.,
B",
volume = "124-125",
number = "",
pages = "368--371",
volume = "124-125",
number = "",
pages = "368--371",
@@
-600,8
+598,7
@@
@Article{gao02,
title = "Empirical potential approach for defect properties in
3{C}-Si{C}",
@Article{gao02,
title = "Empirical potential approach for defect properties in
3{C}-Si{C}",
- journal = "Nuclear Instruments and Methods in Physics Research
- Section B: Beam Interactions with Materials and Atoms",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
volume = "191",
number = "1-4",
pages = "487--496",
volume = "191",
number = "1-4",
pages = "487--496",
@@
-643,7
+640,7
@@
in cubic silicon carbide",
publisher = "AIP",
year = "2007",
in cubic silicon carbide",
publisher = "AIP",
year = "2007",
- journal = "Appl
ied Physics Letters
",
+ journal = "Appl
. Phys. Lett.
",
volume = "90",
number = "22",
eid = "221915",
volume = "90",
number = "22",
eid = "221915",
@@
-750,7
+747,7
@@
interactions in Si",
publisher = "AIP",
year = "2002",
interactions in Si",
publisher = "AIP",
year = "2002",
- journal = "Appl
ied Physics Letters
",
+ journal = "Appl
. Phys. Lett.
",
volume = "80",
number = "1",
pages = "52--54",
volume = "80",
number = "1",
pages = "52--54",
@@
-898,7
+895,7
@@
author = "A K Tipping and R C Newman",
title = "The diffusion coefficient of interstitial carbon in
silicon",
author = "A K Tipping and R C Newman",
title = "The diffusion coefficient of interstitial carbon in
silicon",
- journal = "Semicond
uctor Science and Technology
",
+ journal = "Semicond
. Sci. Technol.
",
volume = "2",
number = "5",
pages = "315--317",
volume = "2",
number = "5",
pages = "315--317",
@@
-924,7
+921,7
@@
@Article{laveant2002,
title = "Epitaxy of carbon-rich silicon with {MBE}",
@Article{laveant2002,
title = "Epitaxy of carbon-rich silicon with {MBE}",
- journal = "Mater
ials Science and Engineering
B",
+ journal = "Mater
. Sci. Eng.,
B",
volume = "89",
number = "1-3",
pages = "241--245",
volume = "89",
number = "1-3",
pages = "241--245",
@@
-945,7
+942,7
@@
silicon by transmission electron microscopy",
publisher = "AIP",
year = "1997",
silicon by transmission electron microscopy",
publisher = "AIP",
year = "1997",
- journal = "Appl
ied Physics Letters
",
+ journal = "Appl
. Phys. Lett.
",
volume = "70",
number = "2",
pages = "252--254",
volume = "70",
number = "2",
pages = "252--254",
@@
-983,7
+980,7
@@
title = "Carbon diffusion in silicon",
publisher = "AIP",
year = "1998",
title = "Carbon diffusion in silicon",
publisher = "AIP",
year = "1998",
- journal = "Appl
ied Physics Letters
",
+ journal = "Appl
. Phys. Lett.
",
volume = "73",
number = "17",
pages = "2465--2467",
volume = "73",
number = "17",
pages = "2465--2467",
@@
-1004,7
+1001,7
@@
y]{C}[sub y]/Si heterostructures",
publisher = "AIP",
year = "1994",
y]{C}[sub y]/Si heterostructures",
publisher = "AIP",
year = "1994",
- journal = "J
ournal of Applied Physics
",
+ journal = "J
. Appl. Phys.
",
volume = "76",
number = "6",
pages = "3656--3668",
volume = "76",
number = "6",
pages = "3656--3668",
@@
-1025,7
+1022,7
@@
strained Si[sub 1 - y]{C}[sub y] /Si heterostructures",
publisher = "AIP",
year = "1995",
strained Si[sub 1 - y]{C}[sub y] /Si heterostructures",
publisher = "AIP",
year = "1995",
- journal = "J
ournal of Applied Physics
",
+ journal = "J
. Appl. Phys.
",
volume = "77",
number = "5",
pages = "1934--1937",
volume = "77",
number = "5",
pages = "1934--1937",
@@
-1107,7
+1104,7
@@
@Article{zirkelbach09,
title = "Molecular dynamics simulation of defect formation and
precipitation in heavily carbon doped silicon",
@Article{zirkelbach09,
title = "Molecular dynamics simulation of defect formation and
precipitation in heavily carbon doped silicon",
- journal = "Mater
ials Science and Engineering:
B",
+ journal = "Mater
. Sci. Eng.,
B",
volume = "159-160",
number = "",
pages = "149--152",
volume = "159-160",
number = "",
pages = "149--152",
@@
-1134,7
+1131,7
@@
journal = "Phys. Rev. B",
volume = "82",
number = "9",
journal = "Phys. Rev. B",
volume = "82",
number = "9",
- pages = "",
+ pages = "
066033
",
year = "2010",
author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
K. N. Lindner and W. G. Schmidt and E. Rauls",
year = "2010",
author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
K. N. Lindner and W. G. Schmidt and E. Rauls",
@@
-1167,8
+1164,7
@@
title = "Controlling the density distribution of Si{C}
nanocrystals for the ion beam synthesis of buried Si{C}
layers in silicon",
title = "Controlling the density distribution of Si{C}
nanocrystals for the ion beam synthesis of buried Si{C}
layers in silicon",
- journal = "Nuclear Instruments and Methods in Physics Research
- Section B: Beam Interactions with Materials and Atoms",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
volume = "147",
number = "1-4",
pages = "249--255",
volume = "147",
number = "1-4",
pages = "249--255",
@@
-1184,8
+1180,7
@@
@Article{lindner99_2,
title = "Mechanisms in the ion beam synthesis of Si{C} layers
in silicon",
@Article{lindner99_2,
title = "Mechanisms in the ion beam synthesis of Si{C} layers
in silicon",
- journal = "Nuclear Instruments and Methods in Physics Research
- Section B: Beam Interactions with Materials and Atoms",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
volume = "148",
number = "1-4",
pages = "528--533",
volume = "148",
number = "1-4",
pages = "528--533",
@@
-1200,8
+1195,7
@@
@Article{lindner01,
title = "Ion beam synthesis of buried Si{C} layers in silicon:
Basic physical processes",
@Article{lindner01,
title = "Ion beam synthesis of buried Si{C} layers in silicon:
Basic physical processes",
- journal = "Nuclear Instruments and Methods in Physics Research
- Section B: Beam Interactions with Materials and Atoms",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
volume = "178",
number = "1-4",
pages = "44--54",
volume = "178",
number = "1-4",
pages = "44--54",
@@
-1229,7
+1223,7
@@
title = "On the balance between ion beam induced nanoparticle
formation and displacive precipitate resolution in the
{C}-Si system",
title = "On the balance between ion beam induced nanoparticle
formation and displacive precipitate resolution in the
{C}-Si system",
- journal = "Mater
ials Science and Engineering:
C",
+ journal = "Mater
. Sci. Eng.,
C",
volume = "26",
number = "5-7",
pages = "857--861",
volume = "26",
number = "5-7",
pages = "857--861",
@@
-1267,7
+1261,7
@@
title = "Phase Transition for a Hard Sphere System",
publisher = "AIP",
year = "1957",
title = "Phase Transition for a Hard Sphere System",
publisher = "AIP",
year = "1957",
- journal = "
The Journal of Chemical Physics
",
+ journal = "
J. Chem. Phys.
",
volume = "27",
number = "5",
pages = "1208--1209",
volume = "27",
number = "5",
pages = "1208--1209",
@@
-1280,7
+1274,7
@@
title = "Studies in Molecular Dynamics. {I}. General Method",
publisher = "AIP",
year = "1959",
title = "Studies in Molecular Dynamics. {I}. General Method",
publisher = "AIP",
year = "1959",
- journal = "
The Journal of Chemical Physics
",
+ journal = "
J. Chem. Phys.
",
volume = "31",
number = "2",
pages = "459--466",
volume = "31",
number = "2",
pages = "459--466",
@@
-1393,8
+1387,7
@@
@Article{wesch96,
title = "Silicon carbide: synthesis and processing",
@Article{wesch96,
title = "Silicon carbide: synthesis and processing",
- journal = "Nuclear Instruments and Methods in Physics Research
- Section B: Beam Interactions with Materials and Atoms",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
volume = "116",
number = "1-4",
pages = "305--321",
volume = "116",
number = "1-4",
pages = "305--321",
@@
-1414,7
+1407,7
@@
ZnSe-based semiconductor device technologies",
publisher = "AIP",
year = "1994",
ZnSe-based semiconductor device technologies",
publisher = "AIP",
year = "1994",
- journal = "J
ournal of Applied Physics
",
+ journal = "J
. Appl. Phys.
",
volume = "76",
number = "3",
pages = "1363--1398",
volume = "76",
number = "3",
pages = "1363--1398",
@@
-1528,7
+1521,7
@@
@Article{tairov78,
title = "Investigation of growth processes of ingots of silicon
carbide single crystals",
@Article{tairov78,
title = "Investigation of growth processes of ingots of silicon
carbide single crystals",
- journal = "J
ournal of Crystal
Growth",
+ journal = "J
. Cryst.
Growth",
volume = "43",
number = "2",
pages = "209--212",
volume = "43",
number = "2",
pages = "209--212",
@@
-1548,7
+1541,7
@@
cubic Si{C} for semiconductor devices",
publisher = "AIP",
year = "1983",
cubic Si{C} for semiconductor devices",
publisher = "AIP",
year = "1983",
- journal = "Appl
ied Physics Letters
",
+ journal = "Appl
. Phys. Lett.
",
volume = "42",
number = "5",
pages = "460--462",
volume = "42",
number = "5",
pages = "460--462",
@@
-1567,7
+1560,7
@@
Si{C} on silicon",
publisher = "AIP",
year = "1987",
Si{C} on silicon",
publisher = "AIP",
year = "1987",
- journal = "J
ournal of Applied Physics
",
+ journal = "J
. Appl. Phys.
",
volume = "61",
number = "10",
pages = "4889--4893",
volume = "61",
number = "10",
pages = "4889--4893",
@@
-1602,7
+1595,7
@@
epitaxy",
publisher = "AIP",
year = "1993",
epitaxy",
publisher = "AIP",
year = "1993",
- journal = "J
ournal of Applied Physics
",
+ journal = "J
. Appl. Phys.
",
volume = "73",
number = "2",
pages = "726--732",
volume = "73",
number = "2",
pages = "726--732",
@@
-1623,7
+1616,7
@@
6{H}-Si{C} substrates",
publisher = "AIP",
year = "1990",
6{H}-Si{C} substrates",
publisher = "AIP",
year = "1990",
- journal = "Appl
ied Physics Letters
",
+ journal = "Appl
. Phys. Lett.
",
volume = "56",
number = "14",
pages = "1353--1355",
volume = "56",
number = "14",
pages = "1353--1355",
@@
-1645,7
+1638,7
@@
silacyclobutane",
publisher = "AIP",
year = "1995",
silacyclobutane",
publisher = "AIP",
year = "1995",
- journal = "J
ournal of Applied Physics
",
+ journal = "J
. Appl. Phys.
",
volume = "78",
number = "2",
pages = "1271--1273",
volume = "78",
number = "2",
pages = "1271--1273",
@@
-1661,7
+1654,7
@@
title = "Epitaxial growth of Si{C} thin films on Si-stabilized
[alpha]-Si{C}(0001) at low temperatures by solid-source
molecular beam epitaxy",
title = "Epitaxial growth of Si{C} thin films on Si-stabilized
[alpha]-Si{C}(0001) at low temperatures by solid-source
molecular beam epitaxy",
- journal = "J
ournal of Crystal
Growth",
+ journal = "J
. Cryst.
Growth",
volume = "154",
number = "1-2",
pages = "72--80",
volume = "154",
number = "1-2",
pages = "72--80",
@@
-1681,7
+1674,7
@@
6{H}--Si{C} by solid-source molecular beam epitaxy",
publisher = "AIP",
year = "1995",
6{H}--Si{C} by solid-source molecular beam epitaxy",
publisher = "AIP",
year = "1995",
- journal = "Appl
ied Physics Letters
",
+ journal = "Appl
. Phys. Lett.
",
volume = "66",
number = "23",
pages = "3182--3184",
volume = "66",
number = "23",
pages = "3182--3184",
@@
-1699,7
+1692,7
@@
{IMPLANTATION}",
publisher = "AIP",
year = "1971",
{IMPLANTATION}",
publisher = "AIP",
year = "1971",
- journal = "Appl
ied Physics Letters
",
+ journal = "Appl
. Phys. Lett.
",
volume = "18",
number = "11",
pages = "509--511",
volume = "18",
number = "11",
pages = "509--511",
@@
-1717,7
+1710,7
@@
beam synthesis and incoherent lamp annealing",
publisher = "AIP",
year = "1987",
beam synthesis and incoherent lamp annealing",
publisher = "AIP",
year = "1987",
- journal = "Appl
ied Physics Letters
",
+ journal = "Appl
. Phys. Lett.
",
volume = "51",
number = "26",
pages = "2242--2244",
volume = "51",
number = "26",
pages = "2242--2244",
@@
-1734,7
+1727,7
@@
title = "Solubility of Carbon in Silicon and Germanium",
publisher = "AIP",
year = "1959",
title = "Solubility of Carbon in Silicon and Germanium",
publisher = "AIP",
year = "1959",
- journal = "
The Journal of Chemical Physics
",
+ journal = "
J. Chem. Phys.
",
volume = "30",
number = "6",
pages = "1551--1555",
volume = "30",
number = "6",
pages = "1551--1555",
@@
-1751,7
+1744,7
@@
{B} in silicon",
publisher = "AIP",
year = "1996",
{B} in silicon",
publisher = "AIP",
year = "1996",
- journal = "Appl
ied Physics Letters
",
+ journal = "Appl
. Phys. Lett.
",
volume = "68",
number = "8",
pages = "1150--1152",
volume = "68",
number = "8",
pages = "1150--1152",
@@
-1766,8
+1759,7
@@
@Article{stolk95,
title = "Implantation and transient boron diffusion: the role
of the silicon self-interstitial",
@Article{stolk95,
title = "Implantation and transient boron diffusion: the role
of the silicon self-interstitial",
- journal = "Nuclear Instruments and Methods in Physics Research
- Section B: Beam Interactions with Materials and Atoms",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
volume = "96",
number = "1-2",
pages = "187--195",
volume = "96",
number = "1-2",
pages = "187--195",
@@
-1791,7
+1783,7
@@
diffusion in ion-implanted silicon",
publisher = "AIP",
year = "1997",
diffusion in ion-implanted silicon",
publisher = "AIP",
year = "1997",
- journal = "J
ournal of Applied Physics
",
+ journal = "J
. Appl. Phys.
",
volume = "81",
number = "9",
pages = "6031--6050",
volume = "81",
number = "9",
pages = "6031--6050",
@@
-1807,7
+1799,7
@@
of Si[sub 1 - y]{C}[sub y] random alloy layers",
publisher = "AIP",
year = "1994",
of Si[sub 1 - y]{C}[sub y] random alloy layers",
publisher = "AIP",
year = "1994",
- journal = "Appl
ied Physics Letters
",
+ journal = "Appl
. Phys. Lett.
",
volume = "64",
number = "3",
pages = "324--326",
volume = "64",
number = "3",
pages = "324--326",
@@
-1827,7
+1819,7
@@
- x - y]Ge[sub x]{C}[sub y]",
publisher = "AIP",
year = "1991",
- x - y]Ge[sub x]{C}[sub y]",
publisher = "AIP",
year = "1991",
- journal = "J
ournal of Applied Physics
",
+ journal = "J
. Appl. Phys.
",
volume = "70",
number = "4",
pages = "2470--2472",
volume = "70",
number = "4",
pages = "2470--2472",
@@
-1860,7
+1852,7
@@
molecular beam epitaxy",
publisher = "AIP",
year = "1999",
molecular beam epitaxy",
publisher = "AIP",
year = "1999",
- journal = "Appl
ied Physics Letters
",
+ journal = "Appl
. Phys. Lett.
",
volume = "74",
number = "6",
pages = "836--838",
volume = "74",
number = "6",
pages = "836--838",
@@
-1925,7
+1917,7
@@
title = "Electron Transport Model for Strained Silicon-Carbon
Alloy",
author = "Shu-Tong Chang and Chung-Yi Lin",
title = "Electron Transport Model for Strained Silicon-Carbon
Alloy",
author = "Shu-Tong Chang and Chung-Yi Lin",
- journal = "Japanese J
ournal of Applied Physics
",
+ journal = "Japanese J
. Appl. Phys.
",
volume = "44",
number = "4B",
pages = "2257--2262",
volume = "44",
number = "4B",
pages = "2257--2262",
@@
-1945,7
+1937,7
@@
Si(001)",
publisher = "AIP",
year = "1997",
Si(001)",
publisher = "AIP",
year = "1997",
- journal = "J
ournal of Applied Physics
",
+ journal = "J
. Appl. Phys.
",
volume = "82",
number = "10",
pages = "4977--4981",
volume = "82",
number = "10",
pages = "4977--4981",
@@
-1999,7
+1991,7
@@
potential energy surfaces",
publisher = "AIP",
year = "2009",
potential energy surfaces",
publisher = "AIP",
year = "2009",
- journal = "
The Journal of Chemical Physics
",
+ journal = "
J. Chem. Phys.
",
volume = "130",
number = "11",
eid = "114711",
volume = "130",
number = "11",
eid = "114711",
@@
-2020,7
+2012,7
@@
molecular dynamics method",
publisher = "AIP",
year = "1981",
molecular dynamics method",
publisher = "AIP",
year = "1981",
- journal = "J
ournal of Applied Physics
",
+ journal = "J
. Appl. Phys.
",
volume = "52",
number = "12",
pages = "7182--7190",
volume = "52",
number = "12",
pages = "7182--7190",
@@
-2145,7
+2137,7
@@
simulation of infrequent events",
publisher = "AIP",
year = "1997",
simulation of infrequent events",
publisher = "AIP",
year = "1997",
- journal = "
The Journal of Chemical Physics
",
+ journal = "
J. Chem. Phys.
",
volume = "106",
number = "11",
pages = "4665--4677",
volume = "106",
number = "11",
pages = "4665--4677",
@@
-2166,7
+2158,7
@@
infrequent events",
publisher = "AIP",
year = "2000",
infrequent events",
publisher = "AIP",
year = "2000",
- journal = "
The Journal of Chemical Physics
",
+ journal = "
J. Chem. Phys.
",
volume = "112",
number = "21",
pages = "9599--9606",
volume = "112",
number = "21",
pages = "9599--9606",
@@
-2200,7
+2192,7
@@
simulation",
publisher = "AIP",
year = "1999",
simulation",
publisher = "AIP",
year = "1999",
- journal = "
The Journal of Chemical Physics
",
+ journal = "
J. Chem. Phys.
",
volume = "110",
number = "19",
pages = "9401--9410",
volume = "110",
number = "19",
pages = "9401--9410",
@@
-2219,7
+2211,7
@@
to the production of amorphous silicon",
publisher = "AIP",
year = "2005",
to the production of amorphous silicon",
publisher = "AIP",
year = "2005",
- journal = "
The Journal of Chemical Physics
",
+ journal = "
J. Chem. Phys.
",
volume = "122",
number = "15",
eid = "154509",
volume = "122",
number = "15",
eid = "154509",
@@
-2240,7
+2232,7
@@
difficult?",
publisher = "AIP",
year = "1993",
difficult?",
publisher = "AIP",
year = "1993",
- journal = "Appl
ied Physics Letters
",
+ journal = "Appl
. Phys. Lett.
",
volume = "62",
number = "25",
pages = "3336--3338",
volume = "62",
number = "25",
pages = "3336--3338",
@@
-2254,7
+2246,7
@@
@Article{chaussende08,
title = "Prospects for 3{C}-Si{C} bulk crystal growth",
@Article{chaussende08,
title = "Prospects for 3{C}-Si{C} bulk crystal growth",
- journal = "J
ournal of Crystal
Growth",
+ journal = "J
. Cryst.
Growth",
volume = "310",
number = "5",
pages = "976--981",
volume = "310",
number = "5",
pages = "976--981",
@@
-2331,7
+2323,7
@@
3{C}-Si{C}/Si (001) interface",
publisher = "AIP",
year = "2009",
3{C}-Si{C}/Si (001) interface",
publisher = "AIP",
year = "2009",
- journal = "J
ournal of Applied Physics
",
+ journal = "J
. Appl. Phys.
",
volume = "106",
number = "7",
eid = "073522",
volume = "106",
number = "7",
eid = "073522",
@@
-2355,7
+2347,7
@@
growth on Si(001) surface",
publisher = "AIP",
year = "1993",
growth on Si(001) surface",
publisher = "AIP",
year = "1993",
- journal = "J
ournal of Applied Physics
",
+ journal = "J
. Appl. Phys.
",
volume = "74",
number = "7",
pages = "4438--4445",
volume = "74",
number = "7",
pages = "4438--4445",
@@
-2466,7
+2458,7
@@
synchrotron x-ray diffraction",
publisher = "AIP",
year = "1999",
synchrotron x-ray diffraction",
publisher = "AIP",
year = "1999",
- journal = "J
ournal of Applied Physics
",
+ journal = "J
. Appl. Phys.
",
volume = "86",
number = "8",
pages = "4184--4187",
volume = "86",
number = "8",
pages = "4184--4187",
@@
-2487,7
+2479,7
@@
carbon ion implantation",
publisher = "AIP",
year = "2002",
carbon ion implantation",
publisher = "AIP",
year = "2002",
- journal = "J
ournal of Applied Physics
",
+ journal = "J
. Appl. Phys.
",
volume = "91",
number = "3",
pages = "1287--1292",
volume = "91",
number = "3",
pages = "1287--1292",
@@
-2506,7
+2498,7
@@
silicon carbide: calculation of bulk properties,
high-pressure phases, point and extended defects, and
amorphous structures",
silicon carbide: calculation of bulk properties,
high-pressure phases, point and extended defects, and
amorphous structures",
- journal = "J
ournal of Physics: Condensed
Matter",
+ journal = "J
. Phys.: Condens.
Matter",
volume = "22",
number = "3",
pages = "035802",
volume = "22",
number = "3",
pages = "035802",
@@
-2520,7
+2512,7
@@
Beauchamp",
title = "Comparison between classical potentials and ab initio
methods for silicon under large shear",
Beauchamp",
title = "Comparison between classical potentials and ab initio
methods for silicon under large shear",
- journal = "J
ournal of Physics: Condensed
Matter",
+ journal = "J
. Phys.: Condens.
Matter",
volume = "15",
number = "41",
pages = "6943",
volume = "15",
number = "41",
pages = "6943",
@@
-2534,7
+2526,7
@@
title = "Verification of Tersoff's Potential for Static
Structural Analysis of Solids of Group-{IV} Elements",
author = "Koji Moriguchi and Akira Shintani",
title = "Verification of Tersoff's Potential for Static
Structural Analysis of Solids of Group-{IV} Elements",
author = "Koji Moriguchi and Akira Shintani",
- journal = "Japanese J
ournal of Applied Physics
",
+ journal = "Japanese J
. Appl. Phys.
",
volume = "37",
number = "Part 1, No. 2",
pages = "414--422",
volume = "37",
number = "Part 1, No. 2",
pages = "414--422",
@@
-2583,8
+2575,7
@@
@Article{nordlund97,
title = "Repulsive interatomic potentials calculated using
Hartree-Fock and density-functional theory methods",
@Article{nordlund97,
title = "Repulsive interatomic potentials calculated using
Hartree-Fock and density-functional theory methods",
- journal = "Nuclear Instruments and Methods in Physics Research
- Section B: Beam Interactions with Materials and Atoms",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
volume = "132",
number = "1",
pages = "45--54",
volume = "132",
number = "1",
pages = "45--54",
@@
-2601,7
+2592,7
@@
title = "Efficiency of ab-initio total energy calculations for
metals and semiconductors using a plane-wave basis
set",
title = "Efficiency of ab-initio total energy calculations for
metals and semiconductors using a plane-wave basis
set",
- journal = "Comput
ational Materials Science
",
+ journal = "Comput
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",
volume = "6",
number = "1",
pages = "15--50",
volume = "6",
number = "1",
pages = "15--50",
@@
-2730,7
+2721,7
@@
@Article{zhu98,
title = "Ab initio pseudopotential calculations of dopant
diffusion in Si",
@Article{zhu98,
title = "Ab initio pseudopotential calculations of dopant
diffusion in Si",
- journal = "Comput
ational Materials Science
",
+ journal = "Comput
. Mater. Sci.
",
volume = "12",
number = "4",
pages = "309--318",
volume = "12",
number = "4",
pages = "309--318",
@@
-2756,7
+2747,7
@@
950 [degree]{C}",
publisher = "AIP",
year = "1995",
950 [degree]{C}",
publisher = "AIP",
year = "1995",
- journal = "Appl
ied Physics Letters
",
+ journal = "Appl
. Phys. Lett.
",
volume = "66",
number = "20",
pages = "2646--2648",
volume = "66",
number = "20",
pages = "2646--2648",
@@
-2778,7
+2769,7
@@
alloys",
publisher = "AIP",
year = "1998",
alloys",
publisher = "AIP",
year = "1998",
- journal = "J
ournal of Applied Physics
",
+ journal = "J
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",
volume = "84",
number = "8",
pages = "4631--4633",
volume = "84",
number = "8",
pages = "4631--4633",
@@
-2795,7
+2786,7
@@
author = "R Jones and B J Coomer and P R Briddon",
title = "Quantum mechanical modelling of defects in
semiconductors",
author = "R Jones and B J Coomer and P R Briddon",
title = "Quantum mechanical modelling of defects in
semiconductors",
- journal = "J
ournal of Physics: Condensed
Matter",
+ journal = "J
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Matter",
volume = "16",
number = "27",
pages = "S2643",
volume = "16",
number = "27",
pages = "S2643",
@@
-2814,7
+2805,7
@@
molecular-beam epitaxy",
publisher = "AIP",
year = "2002",
molecular-beam epitaxy",
publisher = "AIP",
year = "2002",
- journal = "J
ournal of Applied Physics
",
+ journal = "J
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",
volume = "91",
number = "9",
pages = "5716--5727",
volume = "91",
number = "9",
pages = "5716--5727",
@@
-2877,7
+2868,7
@@
@Article{kaxiras96,
title = "Review of atomistic simulations of surface diffusion
and growth on semiconductors",
@Article{kaxiras96,
title = "Review of atomistic simulations of surface diffusion
and growth on semiconductors",
- journal = "Comput
ational Materials Science
",
+ journal = "Comput
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",
volume = "6",
number = "2",
pages = "158--172",
volume = "6",
number = "2",
pages = "158--172",
@@
-2933,7
+2924,7
@@
@Article{chen98,
title = "Production and recovery of defects in Si{C} after
irradiation and deformation",
@Article{chen98,
title = "Production and recovery of defects in Si{C} after
irradiation and deformation",
- journal = "J
ournal of Nuclear Materials
",
+ journal = "J
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",
volume = "258-263",
number = "Part 2",
pages = "1803--1808",
volume = "258-263",
number = "Part 2",
pages = "1803--1808",
@@
-2948,8
+2939,7
@@
@Article{weber01,
title = "Accumulation, dynamic annealing and thermal recovery
of ion-beam-induced disorder in silicon carbide",
@Article{weber01,
title = "Accumulation, dynamic annealing and thermal recovery
of ion-beam-induced disorder in silicon carbide",
- journal = "Nuclear Instruments and Methods in Physics Research
- Section B: Beam Interactions with Materials and Atoms",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
volume = "175-177",
number = "",
pages = "26--30",
volume = "175-177",
number = "",
pages = "26--30",