+It is easily and instantly visible that there is no significant difference among the two simulations of high carbon concentration in the $V_2$ and $V_3$ volumes.
+
+The first C-C peak appears at about 0.15 nm, which is compareable to the nearest neighbour distance of graphite or diamond.
+The number of C-C bonds is much smaller for $V_1$ than for $V_2$ and $V_3$ since carbon atoms are spread over the total simulation volume.
+These carbon atoms are assumed to form strong bonds.
+This is supported by figure \ref{fig:md:energy_450} displaying the total energy of all three simulations during the whole simulation sequence.
+{\color{red}Todo: Add figure and check continue for 100 fs!}
+A huge decrease of the total energy during carbon insertion is observed for the simulations with high carbon concentration in contrast to the $V_1$ simulation, which shows a slight increase.
+Here is the problem.
+Hard to break this bonds again, which is necessary for the 3C-SiC conversion.
+
+The C-C peak at about 0.31 nm perfectly matches the nearest neighbour distance of two carbon atoms in the 3C-SiC lattice.
+In 3C-SiC the same distance is also expected for nearest neighbour silicon atoms.
+Figure \ref{fig:md:si-si_450} shows the radial distribution of Si-Si bonds together with a reference graph for pure c-Si.
+Indeed non-zero $g(r)$ values around 0.31 nm are observed while the amount of Si pairs at regular c-Si distances of 0.24 nm and 0.38 nm decreases.
+However, no clear peak is observed but the interval of enhanced $g(r)$ values corresponds to the width of the C-C $g(r)$ peak.
+For low concentrations of carbon, that is the $V_1$ simulation and early stages of the $V_2$ and $V_3$ simulations, analyses of configurations in which Si-Si distances around 0.3 nm appear and which are identifiable despite a high amount of disorder, which is especially observed in high concentration simulations, identify the \hkl<1 0 0> C-Si dumbbell to be responsible for stretching the Si-Si next neighbour distance.
+This excellently agrees with the calculated value $r(13)$ in table \ref{tab:defects:100db_cmp} for a resulting Si-Si distance in the \hkl<1 0 0> C-Si dumbbell configuration.
+