-high dose ion implantation foolowed by a high-temperature annealing step
-turned out to constitute a promising method to form buried layers of SiC in Si.
-...
+high dose ion implantation followed by a high-temperature annealing step
+turned out to constitute a promising method to form buried layers of SiC in Si
+as indicated in this sketch.
+due to the high areal homogenity achieved in ibs
+the size is only limited by the beam scanning equipment
+and sythesized films do not exhibit surface bending effects
+in contrast these formed by cvd and mbe.
+this enables the synthesis of large are SiC films.